Abstract: Lateral III-N devices such as AlGaN/GaN HEMTs can have structures which serve to improve performance and reduce current degradation. The III-N device can include a conductive substrate and a III-N material structure that includes a III-N buffer layer, a III-N channel layer and a III-N barrier layer where a compositional difference induces a 2DEG channel therein. The first portion is in ohmic contact with the 2DEG channel and the second portion extends over a top surface of the III-N barrier layer and is in direct contact with the top surface of the III-N barrier layer. The device further includes a drain-to-substrate pinch-off voltage and a maximum rated drain-to-source operating voltage which is greater than the drain-to-substrate pinch-off voltage, and the 2DEG channel is fully depleted of charge below the second portion of the drain electrode when the III-N device is biased at or above the maximum rated drain-to-source operating voltage.

Abstract: The A Quick Connect Valve Testing and Tune-up Setup for Valves at a Nuclear Power Plant Claim 1. A Quick Connect Valve Testing and Tune-up Setup for Valves at a Nuclear Power Plant comprises a permanent on/off valve and compression fitting setup proximal a valves input or outputs for valves which required periodic calibration, testing or tune-up. The permanent setup eliminates the disconnecting and damaging removal of existing tubing connections at the valve when calibration, testing or tune-up is performed.

Abstract: Described herein are lateral III-N (e.g., GaN) devices having a III-N depleting layer. A circuit includes a depletion-mode transistor with a source connected to a drain of an enhancement-mode transistor. The gate of the depletion-mode transistor and the gate of the enhancement-mode transistor are biased at zero volts, and the drain of the depletion-mode transistor is biased at positive voltage to block a current in a forward direction. Then, the bias of the gate of the enhancement-mode transistor is changed to a first voltage greater than the threshold voltage of the enhancement-mode transistor and a first current is allowed to flow through the channel in a forward direction. Then, the bias of the gate of the depletion-mode transistor is changed to a second voltage and a second current is allowed to flow through the channel in a forward direction where the second current is greater than the first current.

Abstract: A text dialogue between a first user and a second user is obtained. Based on an analysis of the text dialogue, workflows that are relevant to the text dialogue are identified. A list of the workflows is provided to a client device associated with the first user. An indication of a selection of a particular workflow from the list of the workflow is received from the client device associated with the first user. Based on the particular workflow, a communication session is established between the second user and an automated chatbot associated with the particular workflow.

Abstract: An indication from a live agent in a communication session with a user to invoke a specified automated agent interactive conversation flow is received. The communication session with the user is transitioned from the live agent to the specified automated agent interactive conversation flow. During the specified automated agent interactive conversation flow, the live agent retains control over the communication session. An indication of an interaction of the user with the specified automated agent interactive conversation flow is provided. The communication session with the user is returned back to the live agent.

Abstract: A system for re-calibrating a machine includes an arm having a first end and a second end opposite the first end. The arm is configured to be coupled to a frame of the machine and to move within a range of motion during an active state of the machine. The system includes a target element on the first end of the arm, the target element including an outer surface and a projection extending away from the outer surface. A portion of the outer surface defines an eccentric surface along the target element. The system includes a magnetic field sensor coupled to the frame and configured such that the sensor is operable to detect the projection in response to 1) the arm being positioned outside of the range of motion and 2) the machine being not in the active state.

Abstract: Systems and methods for performing data protection operations in a containerized application. A sidecar application is associated with or attached to a main application. The sidecar application has access to the resources of the main application. Backup requests are handled by the sidecar so that the application, which may be stateful, can be placed in a consistent state prior to performing the backup operation. The backup operation is then performed on the consistent application or on the data that is quiesced.

Abstract: An electronic module for a half-bridge circuit includes a base substrate with an insulating layer between a first metal layer and a second metal layer. A trench formed through the first metal layer electrically isolates first, second, and third portions of the first metal layer from one another. A high-side switch includes an enhancement-mode transistor and a depletion-mode transistor. The depletion-mode transistor includes a III-N material structure on an electrically conductive substrate. A drain electrode of the depletion-mode transistor is connected to the first portion, a source electrode of the enhancement-mode transistor is connected to the second portion, a drain electrode of the enhancement-mode transistor is connected to a source electrode of the depletion-mode transistor, a gate electrode of the depletion-mode transistor is connected to the electrically conductive substrate, and the electrically conductive substrate is connected to the second portion.

Abstract: A system for re-calibrating a machine includes an arm having a first end and a second end opposite the first end. The arm is configured to be coupled to a frame of the machine and to move within a range of motion during an active state of the machine. The system includes a target element on the first end of the arm, the target element including an outer surface and a projection extending away from the outer surface. A portion of the outer surface defines an eccentric surface along the target element. The system includes a magnetic field sensor coupled to the frame and configured such that the sensor is operable to detect the projection 1) in response to the arm being positioned outside of the range of motion and concurrently 2) when the machine is not in the active state.

Abstract: A medical scope device such as an endoscope is produced using a cast aluminum process including a molten casting aluminum alloy including a maximum of 0.2-0.3% Si and at least 5% Zn. The process includes providing an investment casting mold, casting the aluminum alloy in the mold to create a component and removing the mold from the component, post-machining the component to meet a desired specification, and after post-machining the component, performing surface finishing, such as centrifugal barrel finishing (CBF) sufficient to remove impurities on casting surfaces by 2-3 mils, then coating the component with a micro-crystalline aluminum anodic coating of at least 0.5 mil thickness. A medical scope and product-by-process is also provided employing such techniques.

Abstract: Described herein are lateral III-N (e.g., GaN) devices having a III-N depleting layer. A circuit includes a depletion-mode transistor with a source connected to a drain of an enhancement-mode transistor. The gate of the depletion-mode transistor and the gate of the enhancement-mode transistor are biased at zero volts, and the drain of the depletion-mode transistor is biased at positive voltage to block a current in a forward direction. Then, the bias of the gate of the enhancement-mode transistor is changed to a first voltage greater than the threshold voltage of the enhancement-mode transistor and a first current is allowed to flow through the channel in a forward direction. Then, the bias of the gate of the depletion-mode transistor is changed to a second voltage and a second current is allowed to flow through the channel in a forward direction where the second current is greater than the first current.

Abstract: A medical scope device such as an endoscope is produced using a cast aluminum process including a molten casting aluminum alloy including a maximum of 0.2-0.3% Si and at least 5% Zn. The process includes providing an investment casting mold, casting the aluminum alloy in the mold to create a component and removing the mold from the component, post-machining the component to meet a desired specification, and after post-machining the component, performing surface finishing, such as centrifugal barrel finishing (CBF) sufficient to remove impurities on casting surfaces by 2-3 mils, then coating the component with a micro-crystalline aluminum anodic coating of at least 0.5 mil thickness. A medical scope and product-by-process is also provided employing such techniques.

Abstract: An adhesive composition comprising a silane-modified epoxy resin, a dicyclopentadiene novolac epoxy resin and a curing agent. The composition shows good oily steel bonding, even in the absence of CTBN rubber or rubber adducts as toughening agents, with good Tg values of the cured resin and good Tg retention after hot wet aging.

Abstract: A containerized environment and application that are configured for component specific continuous replication and granular application level application. A key value store, which stores key values related to configuration data of the containerized application, is replicated continuously to a replicated key value store at a replica site. Persistent volumes may also be replicated to a replica site. The replication can be performed to multiple replica sites in an application specific manner.

Abstract: A semiconductor device comprises a III-N device including an insulating substrate. The insulating substrate includes a first side and a second side. The device further includes a III-N material structure on a first side of the insulating substrate, and a gate electrode, a source electrode, and a drain electrode on a side of the III-N material structure opposite the substrate. A backmetal layer on the second side of the insulating substrate, and a via hole is formed through the III-N material structure and the insulating substrate. A metal formed in the via-hole is electrically connected to the drain electrode on the first side of the substrate and electrically connected to the backmetal layer on the second side of the substrate.

Abstract: In accordance with the present approach, a collaborative chat system is provided that enables collaborative communication between a user preferring a native chat platform and a different user who communicates using a non-native or third-party chat platform. The user may particularly select various other users to be added to a collaborative chat, regardless of which chat platform the other users have set as their main or preferred communication channel. Indeed, when displaying the various users available to be added to the collaborative chat, the collaborative chat system may display a visual indication or icon that indicates which chat platform the various users are available through. The collaborative chat system or platform may utilize bi-directional communications between the native chat platform and any communicatively coupled third-party chat platforms to link the user with the selected other users within a collaborative chat instance.

Abstract: An electronic module for a half-bridge circuit includes a base substrate with an insulating layer between a first metal layer and a second metal layer. A trench formed through the first metal layer electrically isolates first, second, and third portions of the first metal layer from one another. A high-side switch includes an enhancement-mode transistor and a depletion-mode transistor. The depletion-mode transistor includes a III-N material structure on an electrically conductive substrate. A drain electrode of the depletion-mode transistor is connected to the first portion, a source electrode of the enhancement-mode transistor is connected to the second portion, a drain electrode of the enhancement-mode transistor is connected to a source electrode of the depletion-mode transistor, a gate electrode of the depletion-mode transistor is connected to the electrically conductive substrate, and the electrically conductive substrate is connected to the second portion.

Abstract: An electronic module for a half-bridge circuit includes a base substrate with an insulating layer between a first metal layer and a second metal layer. A trench formed through the first metal layer electrically isolates first, second, and third portions of the first metal layer from one another. A high-side switch includes an enhancement-mode transistor and a depletion-mode transistor. The depletion-mode transistor includes a III-N material structure on an electrically conductive substrate. A drain electrode of the depletion-mode transistor is connected to the first portion, a source electrode of the enhancement-mode transistor is connected to the second portion, a drain electrode of the enhancement-mode transistor is connected to a source electrode of the depletion-mode transistor, a gate electrode of the depletion-mode transistor is connected to the electrically conductive substrate, and the electrically conductive substrate is connected to the second portion.

Abstract: A self-adhesive prepreg comprising a fibre reinforcement layer having a first side and a second side, wherein the first side of the fibre reinforcement layer has been pre-impregnated with a self-adhesive resin composition. The self-adhesive may be used as a structural reinforcement and is especially adapted for direct bonding to oily steel or galvanized steel in the automotive, aerospace and other sheet metal fabrication industries.

Abstract: An example system for dynamic agent management involving multiple queues is presented. The system may include a remote network management platform that manages a network by way of a computational instance. A first group and a second group of agents may be assigned to address work items in a first queue in the computational instance. The second group may also be assigned to address and prioritize work items in a second queue in the computational instance. A computing device within the computational instance may assign a work item originating from a client device in the managed network into the first queue according to routing rules. The assignment may cause a timer to record a duration that the work item is in the first queue. The computing device may assign one of the second group of agents to address the work item based on the duration exceeding a pre-determined value.