Abstract: A communications system is provided employing two-way integration approach providing access to notifications and actions occurring on unmanaged communication devices through the use of TV. The system includes installation of an application on unmanaged devices providing the ability to access all notifications and actions occurring on the unmanaged devices using TV. The unmanaged device obtains an input directly from TV from an application server which in turn obtains its input primarily from a TV. The input is not limited to the TV only, and can come from other sources.

Abstract: A communications system is provided employing two-way integration approach providing access to notifications and actions occurring on unmanaged communication devices through the use of TV. The system includes installation of an application on unmanaged devices providing the ability to access all notifications and actions occurring on the unmanaged devices using TV. The unmanaged device obtains an input directly from TV from an application server which in turn obtains its input primarily from a TV. The input is not limited to the TV only, and can come from other sources.

Abstract: A communications system is provided employing two-way integration approach providing access to notifications and actions occurring on unmanaged communication devices through the use of TV. The system includes installation of an application on unmanaged devices providing the ability to access all notifications and actions occurring on the unmanaged devices using TV. The unmanaged device obtains an input directly from TV from an application server which in turn obtains its input primarily from a TV. The input is not limited to the TV only, and can come from other sources.

Abstract: The present invention provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature, UV spectral distribution, and other conditions may be independently modulated in each operation. Operations may be pulsed or even be concurrently applied to the same wafer. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film.

Abstract: In various embodiments, a physical vapor deposition tile arrangement is provided. The physical vapor deposition tile arrangement may include a plurality of physical vapor deposition tiles arranged next to each other; and a resilient structure configured to press the plurality of physical vapor deposition tiles together.

Abstract: A call-placement service is provided for a cable television set top box (STB). The STB is interconnected to a television display and via a cable link to a server at a cable television provider head end. The STB includes an onboard application that presents a menu to the subscriber allowing access to a list of telephone numbers and downloadable content providers. The head end includes a service application that selects an appropriate telephone provider and transmits the telephone numbers to the provider. The telephone provider connects to the subscriber and detects whether the subscriber can receive an SMS message. If so, the provider connects to the target and detects whether the target can accept the call or send an SMS message. If so, the telephone system connects the call between the subscriber and the target of passes an SMS message to the user's that may contain a link for content download.

Abstract: The present invention provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature, UV spectral distribution, and other conditions may be independently modulated in each operation. Operations may be pulsed or even be concurrently applied to the same wafer. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film.

Abstract: In various embodiments, a physical vapor deposition tile arrangement is provided. The physical vapor deposition tile arrangement may include a plurality of physical vapor deposition tiles arranged next to each other; and a resilient structure configured to press the plurality of physical vapor deposition tiles together.

Abstract: The present invention provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature, UV spectral distribution, and other conditions may be independently modulated in each operation. Operations may be pulsed or even be concurrently applied to the same wafer. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film.

Abstract: The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.

Abstract: The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.

Abstract: The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.

Abstract: An improved deposition source configuration in a process chamber can reduce the overheating in a thin film deposition system.

Abstract: A semiconductor processing tool heats wafers using radiant heat and resistive heat in chamber or in a load lock where pressure changes. The wafers are heated in greater part with a resistive heat source until a transition temperature or pressure is reached, then they are heated in greater part with a radiant heat source. Throughput improves for the tool because of the wafers can reach a high temperature uniformly in seconds.

Abstract: A vapor deposition process can be used to create layers within a photovoltaic module.

Abstract: A semiconductor processing tool heats wafers using radiant heat and resistive heat in chamber or in a load lock where pressure changes. The wafers are heated in greater part with a resistive heat source until a transition temperature or pressure is reached, then they are heated in greater part with a radiant heat source. Throughput improves for the tool because of the wafers can reach a high temperature uniformly in seconds.

Abstract: Provided herein are assemblies that, when coupled to an object, are capable of keeping the object at a uniform elevated temperature while removing large amounts of heat from an external source. Applications include various integrated circuit fabrication processes that use such external sources to expose wafers to radiation. In certain embodiments, the assemblies include a pedestal for supporting the wafer or other object. In certain embodiments, the assemblies include a calibrated heat resistance that allows heat be conducted away from the pedestal and wafer to maintain the desired set-point temperature. In certain embodiments, the pedestal may have one or more protrusions used to dissipate or transfer heat from the pedestal to a heat sink. Also, in certain embodiments, the pedestal surface is configured to have a spectral reflectivity of desired values in such way as to reflect the wavelengths that are emitted by an external radiant heat source.

Abstract: The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photoresist material from, e.g., a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a pedestal for supporting a wafer, which pedestal has a low emissivity surface to reduce heat transfer by radiation.

Abstract: Methods and apparatus for cleaning a semiconductor substrate that significantly reduce the number of particles falling onto the substrate during cleaning by coating all interior surfaces within a processing chamber with an adhesion film that has an increased sticking coefficient for any subsequently arriving etched species to promote a continuous film growth and improve adhesion of such etched species. Due to its increased sticking coefficient, this adhesion film reduces surface mobility of any arriving by-products to enable the growth of the continuous film of etched species. The continuous film of etched species adheres firmly to the adhesion film such that the etched species are prevented from flaking off and falling onto the substrate being cleaned. The methods and apparatus may clean a plurality of semiconductor substrates, whereby a plurality of adhesion films are sequentially deposited over a plurality of continuous film growths of removed materials for cleaning the substrates.

Abstract: The present invention describes a method of end point detecting a process. According to the present invention a surface characteristic is continually measured while the substrate is being processed. A predetermined change in the surface characteristic is utilized a signal and end to the processing step.