Abstract: A photosensitive resist (100) for coating on a semiconductor substrate or a mask comprises a photo acid generator (D), a solvent (E) and at least two different base polymers, of which a first base polymer comprises cycloaliphatic parent structures (A) which substantially absorb incident light at 248 nm and are substantially transparent to incident light at 193 nm, and a second base polymer comprises aromatic parent structures (B) which substantially absorb incident light at 193 nm and are substantially transparent to incident light at 248 nm. If such a resist (100) is applied in a coat thickness of from 50 to 400 nm to a substrate and the proportion of the second base polymer having the aromatic parent structure is between 1 and 25 mol %, a relatively high structure contrast, better stability to etching and a reduction of defects are advantageously achieved in an exposure at a wavelength of 193 nm. Exposure over the entire depth range of the resist (100) is ensured thereby.

Abstract: The invention relates to a process for the production of a semiconductor apparatus, in which an etch step is carried out after an exposure step using light having a wavelength of 193 nm and a development step, the etch gas used containing an added reactive monomer. As a result, polymerization of the surface and hence sidewall passivation of the photoresist used are achieved.

Abstract: A method for producing metal layers on surfaces of semiconductor substrates includes the step of providing a semiconductor substrate having a surface. In this case, a precursor compound of a metal to be deposited is condensed out on the semiconductor surface and subsequently decomposed thermally. The method makes it possible to fill trenches with a high aspect ratio, it being possible to effectively suppress the formation of voids.

Abstract: The present invention relates to a process for the back-surface grinding of wafers using films which have a support layer, which is known per se, and an adhesion layer which can be polymerized in steps, and to films which include such an adhesion layer which can be polymerized in steps, and to the use thereof.

Abstract: A method for producing metal layers on surfaces of semiconductor substrates includes the step of providing a semiconductor substrate having a surface. In this case, a precursor compound of a metal to be deposited is condensed out on the semiconductor surface and subsequently decomposed thermally. The method makes it possible to fill trenches with a high aspect ratio, it being possible to effectively suppress the formation of voids.

Abstract: The present invention relates to a dielectric filling for electrical wiring planes of an integrated circuit. The electrical wiring of the integrated circuit comprises a base body on which track and passivation planes can already be disposed; a conductive layer which is disposed on the base body and is patterned in such a manner that it exhibits a first conductor track, a second conductor track and a trench between the first conductor track and the second conductor track; at least one dielectric layer is disposed on the conductive layer and at least partially fills the trench, the preferred material of the dielectric layer being the polymer material polybenzoxazole.

Abstract: The present invention relates to a dielectric filling for electrical wiring planes of an integrated circuit. The electrical wiring of the integrated circuit comprises a base body on which track and passivation planes can already be disposed; a conductive layer which is disposed on the base body and is patterned in such a manner that it exhibits a first conductor track, a second conductor track and a trench between the first conductor track and the second conductor track; at least one dielectric layer is disposed on the conductive layer and at least partially fills the trench, the preferred material of the dielectric layer being the polymer material polybenzoxazole.

Abstract: A chip card includes a plastic card. A plastic body is disposed in the plastic card and a semiconductor chip is surrounded by the plastic body. Contact strips are electrically connected with the semiconductor chip and are connected to the plastic card. The contact strips have a flexible region near and outside of the plastic body and are advantageously parts of a lead frame. An adhesive which joins the contact strips to the plastic card has at least three layers including a middle layer of flexible material.

Abstract: A method for depositing an SiO.sub.2 layer, which acts as an inter-metal dielectric (IMD), is provided. The method includes the steps of applying to the topography an organodisiloxane which is dissolved in an organic solvent, the organodisiloxane is then polymerized, and the polymer formed is decomposed, the polymer changing in the process to become an SiO.sub.2 -rich layer. The method of the present invention results in SiO.sub.2 layers which achieve an excellent local and global degree of planarization and have a distinctly lower dielectric constant than SiO.sub.2 layers prepared using conventional methods.

Abstract: A radiation-curable reaction resin system, comprising a homogeneous solution of a thermoplastic and a reaction resin, whereby the proportion of the thermoplastic in the solution is approximately 3 to about 50% by weight. The reaction resin system has a stable shelf life. Further, the reaction resin system can be cured by radiation to form a shaped material, comprising a continuous and a discontinuous phase and which exhibits thermoplastic-like behavior.

Abstract: An acoustically matched reaction resin compound for damping coating of surface wave components is disclosed that contains one or more epoxy resins, one or more dicarboxylic acids or polycarboxylic acids or, respectively, acidic esters of dicarboxylic acids or polycarboxylic acids, an aliphatic or hetero-aromatic amine in a proportion sufficient to catalyze the cross linking of the reaction resin compound, and a solvent. The number of amine hydrogen equivalents and acid equivalents together is less than the number of epoxy equivalents and the uniformly mixed reaction resin compound can be set to a predetermined viscosity and thixotropy required for the application. For example, the reaction resin compound can be applied onto the wafer containing the surface wave components in a silk screening process. Sharp contours can be produced that survive the curing process in an unmodified state.