Patents by Inventor Michael Rueb
Michael Rueb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11916465Abstract: A compensating element having a first and a second assembly, wherein a locking mechanism is provided which can be switched over between a first and a second operating state. In the first operating state, the first assembly is connected fixedly to the second assembly and, in the second operating state, the first and second assemblies are connected to each other via a spring mechanism in such a manner that they are movable relative to each other. The locking mechanism includes an electric motor that can be used to switch over between the first and the second operating state. A locking ring is or is not braced against at least three balls depending on its rotational position with respect to a center axis. The locking ring is connected in terms of rotary drive to the electric motor via a torsion spring which is elastic with respect to the center axis.Type: GrantFiled: June 23, 2022Date of Patent: February 27, 2024Assignee: Robert Bosch GmbHInventors: Michael Danzberger, Andreas Rueb, Christoph Janssen, Efim Kuhn, Fan Yang, Markus Groganz, Peter Schlegel, Sebastian Siedler, Thomas Dickmann
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Patent number: 9711621Abstract: A trench transistor having a semiconductor body includes a source region, a body region, a drain region electrically connected to a drain contact, and a gate trench including a gate electrode which is isolated from the semiconductor body. The gate electrode is configured to control current flow between the source region and the drain region along at least a first side wall of the gate trench. The trench transistor further includes a doped semiconductor region having dopants introduced into the semiconductor body through an unmasked part of the walls of a trench.Type: GrantFiled: July 30, 2014Date of Patent: July 18, 2017Assignee: Infineon Technologies AGInventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schaeffer
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Patent number: 9312346Abstract: A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.Type: GrantFiled: April 24, 2014Date of Patent: April 12, 2016Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Franz Hirler, Armin Willmeroth, Michael Rueb, Holger Kapels
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Patent number: 9117874Abstract: A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure.Type: GrantFiled: November 19, 2013Date of Patent: August 25, 2015Assignee: Infineon Technologies Austria AGInventors: Franz Hirler, Thoralf Kautzsch, Anton Mauder, Michael Rueb, Hans-Joachim Schulze, Helmut Strack, Armin Willmeroth
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Publication number: 20140332885Abstract: A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.Type: ApplicationFiled: July 30, 2014Publication date: November 13, 2014Inventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schaeffer
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Patent number: 8884477Abstract: An electro-motor drive, in particular for a fan drive of a motor vehicle, includes a commutator motor, a motor shaft of which is rotatably mounted on axially opposite sides in shaft bearings facing away from the bearing shield in order to substantially dampen the sound of at least bearing play-related contact noise and vibration or humming noise.Type: GrantFiled: December 27, 2012Date of Patent: November 11, 2014Assignee: Brose Fahrzeugteile GmbH & Co. WuerzburgInventors: Marco Stoehling, Karl-Heinz Bauer, Michael Rueb, Frank Wittstadt, Hannelore Diller, Peter Tiemeyer
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Patent number: 8815686Abstract: A method for production of doped semiconductor regions in a semiconductor body of a lateral trench transistor includes forming a trench in the semiconductor body and introducing dopants into at least one area of the semiconductor body that is adjacent to the trench, by carrying out a process in which dopants enter the at least one area through inner walls of the trench.Type: GrantFiled: March 14, 2013Date of Patent: August 26, 2014Assignee: Infineon Technologies AGInventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schaeffer
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Publication number: 20140231969Abstract: A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.Type: ApplicationFiled: April 24, 2014Publication date: August 21, 2014Applicant: Infineon Technologies Austria AGInventors: Anton Mauder, Franz Hirler, Armin Willmeroth, Michael Rueb, Holger Kapels
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Patent number: 8716792Abstract: A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.Type: GrantFiled: September 30, 2008Date of Patent: May 6, 2014Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Franz Hirler, Armin Willmeroth, Michael Rueb, Holger Kapels
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Publication number: 20140073110Abstract: A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure.Type: ApplicationFiled: November 19, 2013Publication date: March 13, 2014Applicant: Infineon Technologies Austria AGInventors: Franz Hirler, Thoralf Kautzsch, Anton Mauder, Michael Rueb, Hans-Joachim Schulze, Helmut Strack, Armin Willmeroth
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Patent number: 8492771Abstract: A semiconductor device includes a first semiconductor substrate of a first band-gap material and a second semiconductor substrate of a second band-gap material. The second band-gap material has a lower band-gap than the first band-gap material. A heterojunction is formed between the first semiconductor substrate and the second semiconductor substrate substantially in a first plane. The semiconductor device further includes, in a cross-section which is perpendicular to the first plane, a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type both of which extend from the second semiconductor substrate at least partially into the first semiconductor substrate.Type: GrantFiled: September 27, 2007Date of Patent: July 23, 2013Assignee: Infineon Technologies Austria AGInventors: Michael Rüb, Michael Treu, Armin Willmeroth, Franz Hirler
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Patent number: 8431988Abstract: A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.Type: GrantFiled: October 28, 2005Date of Patent: April 30, 2013Assignee: Infineon Technologies AGInventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schäffer
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Patent number: 8421283Abstract: An electro-motor drive, in particular for a fan drive of a motor vehicle, includes a commutator motor, a motor shaft of which is rotatably mounted on axially opposite sides in shaft bearings facing away from the bearing shield in order to substantially dampen the sound of at least bearing play-related contact noise and vibration or humming noise.Type: GrantFiled: June 17, 2011Date of Patent: April 16, 2013Assignee: Brose Fahrzeugteile GmbH & Co. KG WuerzburgInventors: Marco Stoehling, Karl-Heinz Bauer, Michael Rueb, Frank Wittstadt, Hannelore Diller, Peter Tiemeyer
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Patent number: 8343834Abstract: A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.Type: GrantFiled: December 16, 2011Date of Patent: January 1, 2013Assignee: Infineon Technologies Austria AGInventors: Armin Willmeroth, Michael Rueb
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Patent number: 8294206Abstract: An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift section adjoining the channel regions comprises drift zones and charge compensation zones. A part of the charge compensation zones includes conductively connected charge compensation zones electrically connected to the first electrode. Another part includes nearly-floating charge compensation zones, so that an increased control electrode surface has a monolithically integrated additional capacitance CZGD in a cell region of the semiconductor device.Type: GrantFiled: June 15, 2011Date of Patent: October 23, 2012Assignee: Infineon Technologies Austria AGInventors: Armin Willmeroth, Winfried Kaindl, Carolin Tolksdorf, Michael Rueb
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Patent number: 8183660Abstract: A semiconductor component is proposed which has a semiconductor body having a first semiconductor zone of the first conduction type, at least one first rectifying junction with respect to the first semiconductor zone, at least one second rectifying junction with respect to the first semiconductor zone, wherein the three rectifying junctions each have a barrier height of different magnitude.Type: GrantFiled: February 26, 2008Date of Patent: May 22, 2012Assignee: Infineon Technologies AGInventors: Michael Rueb, Roland Rupp, Michael Treu
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Publication number: 20120088353Abstract: A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.Type: ApplicationFiled: December 16, 2011Publication date: April 12, 2012Applicant: Infineon Technologies Austria AGInventors: Armin Willmeroth, Michael Rueb
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Patent number: 8101997Abstract: A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.Type: GrantFiled: April 29, 2008Date of Patent: January 24, 2012Assignee: Infineon Technologies Austria AGInventors: Armin Willmeroth, Michael Rueb
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Publication number: 20110309696Abstract: An electro-motor drive, in particular for a fan drive of a motor vehicle, includes a commutator motor, a motor shaft of which is rotatably mounted on axially opposite sides in shaft bearings facing away from the bearing shield in order to substantially dampen the sound of at least bearing play-related contact noise and vibration or humming noise.Type: ApplicationFiled: June 17, 2011Publication date: December 22, 2011Inventors: Marco STOEHLING, Karl-Heinz Bauer, Michael Rueb, Frank Wittstadt, Hannelore Diller, Peter Tiemeyer
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Publication number: 20110241104Abstract: An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift section adjoining the channel regions comprises drift zones and charge compensation zones. A part of the charge compensation zones includes conductively connected charge compensation zones electrically connected to the first electrode. Another part includes nearly-floating charge compensation zones, so that an increased control electrode surface has a monolithically integrated additional capacitance CZGD in a cell region of the semiconductor device.Type: ApplicationFiled: June 15, 2011Publication date: October 6, 2011Applicant: Infineon Technologies Austria AGInventors: Armin Willmeroth, Winfried Kaindl, Carolin Tolksdorf, Michael Rueb