Patents by Inventor Michael Rueb
Michael Rueb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7132726Abstract: An integrated semiconductor circuit having a first and a second portion of a substrate, in which a power semiconductor circuit structure and a logic circuit structure are respectively formed. The metallization having a power metal layer and an in relative terms thinner logic metal layer, the two metal layers being located directly above one another in this order, without an intermetal dielectric between them, only in the first portion above the power semiconductor circuit structure, and an uninterrupted conductive barrier layer being located at least between the power metal layer and the intermediate oxide layer and also between the power metal layer and the contact regions and electrode portions of the power semiconductor circuit structure which it contact-connects, and to a method for fabricating it.Type: GrantFiled: January 18, 2005Date of Patent: November 7, 2006Assignee: Infineon Technologies AGInventors: Michael Rueb, Thomas Detzel
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Patent number: 7091115Abstract: The invention relates to a method for doping a semiconductor body (2), in which an n-type doping is introduced into the semiconductor body, which is initially p-doped, for example, by means of ion irradiation preferably with protons, which n-type doping is then cancelled by the action of a laser beam (8) in specific regions (9) so that the original p-type doping is present in said regions (9).Type: GrantFiled: December 23, 2003Date of Patent: August 15, 2006Assignee: Infineon Technologies AGInventor: Michael Rueb
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Publication number: 20060118852Abstract: A process for producing structures in a semiconductor zone, has the steps of a) producing a trench (2) in the semiconductor zone (18), b) filling the trench with a photoresist (19), and c) exposing the photoresist (19) using ion beams (20), d) developing the photoresist (19). The energy density and ion dose for the ion beams (20) are selected in such a way that the photoresist (19) is only chemically changed at defined depths, so as to produce two regions, in the first region (21) of which the photoresist has been chemically changed at the defined depths by the ion beams (20), and in the second region of which the photoresist has been left chemically unchanged, so that during the developing step the photoresist is removed in precisely one of the two regions.Type: ApplicationFiled: November 9, 2005Publication date: June 8, 2006Inventor: Michael Rueb
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Patent number: 6960798Abstract: A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.Type: GrantFiled: June 6, 2003Date of Patent: November 1, 2005Assignee: Infineon Technologies AGInventors: Gerald Deboy, Dirk Ahlers, Helmut Strack, Michael Rueb, Hans Martin Weber
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Publication number: 20050179068Abstract: An integrated semiconductor circuit having a first and a second portion of a substrate, in which a power semiconductor circuit structure and a logic circuit structure are respectively formed. The metallization having a power metal layer and an in relative terms thinner logic metal layer, the two metal layers being located directly above one another in this order, without an intermetal dielectric between them, only in the first portion above the power semiconductor circuit structure, and an uninterrupted conductive barrier layer being located at least between the power metal layer and the intermediate oxide layer and also between the power metal layer and the contact regions and electrode portions of the power semiconductor circuit structure which it contact-connects, and to a method for fabricating it.Type: ApplicationFiled: January 18, 2005Publication date: August 18, 2005Inventors: Michael Rueb, Thomas Detzel
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Patent number: 6894329Abstract: A semiconductor component has a semiconductor body comprising blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface coincides with the surface of the drain zone facing the source zone, such that the regions of the first and second conductivity type nested inside each other reach the drain zone.Type: GrantFiled: June 6, 2003Date of Patent: May 17, 2005Assignee: Infineon Technologies AGInventors: Gerald Deboy, Dirk Ahlers, Helmut Strack, Michael Rueb, Hans Martin Weber
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Patent number: 6828609Abstract: A semiconductor component having a semiconductor body comprises a blocking pn junction, a source zone of a first conductivity type and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type. The side of the zone of the second conductivity type faces the drain zone forming a first surface, and in the region between the first surface and a second surface areas of the first and second conductivity type are nested in one another. The areas of the first and second conductivity type are variably so doped that near the first surface doping atoms of the second conductivity type predominate, and near the second surface doping atoms of the first conductivity type predominate. Furthermore a plurality of floating zones of the first and second conductivity type is provided.Type: GrantFiled: June 6, 2003Date of Patent: December 7, 2004Assignee: Infineon Technologies AGInventors: Gerald Deboy, Dirk Ahlers, Helmut Strack, Michael Rueb, Hans Martin Weber
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Patent number: 6825514Abstract: A process for manufacturing of a semiconductor device comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode, the side of the zone of the second conductivity type facing the drain zone forming a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, areas of the first and second conductivity type nested in one another, comprises the step of: varying in individual semiconductor layers, by doping, the degree of compensation in the regions of the second conductivity type.Type: GrantFiled: June 6, 2003Date of Patent: November 30, 2004Assignee: Infineon Technologies AGInventors: Gerald Deboy, Dirk Ahlers, Helmut Strack, Michael Rueb, Hans Martin Weber
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Patent number: 6819089Abstract: A switching power supply including a power factor correction circuit comprises a rectifier, an inductor coupled in series with the rectifier, a semiconductor switch formed by a compensation device coupled in parallel with the rectifier and the inductor. The output circuit comprises a diode coupled in series with a capacitor both coupled in parallel with the semiconductor switch. An input current sensor, and a control unit for controlling the compensation device are provided.Type: GrantFiled: August 1, 2003Date of Patent: November 16, 2004Assignee: Infineon Technologies AGInventors: Gerald Deboy, Dirk Ahlers, Helmut Strack, Michael Rueb, Hans Martin Weber
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Publication number: 20040185642Abstract: The invention relates to a method for doping a semiconductor body (2), in which an n-type doping is introduced into the semiconductor body, which is initially p-doped, for example, by means of ion irradiation preferably with protons, which n-type doping is then cancelled by the action of a laser beam (8) in specific regions (9) so that the original p-type doping is present in said regions (9).Type: ApplicationFiled: December 23, 2003Publication date: September 23, 2004Applicant: Infineon Technologies AGInventor: Michael Rueb
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Patent number: 6756162Abstract: A stencil mask for high- and ultrahigh-energy implantation of semiconductor wafers has a substrate with implantation openings through which the implantation energy can be projected onto a wafer that will be implanted. The critical dimension of the implantation openings is defined in a manner dependent on the respective implantation energy.Type: GrantFiled: April 30, 2002Date of Patent: June 29, 2004Assignee: Infineon Technoplogies AGInventor: Michael Rueb
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Publication number: 20040056311Abstract: A switching power supply including a power factor correction circuit comprises a rectifier, an inductor coupled in series with the rectifier, a semiconductor switch formed by a compensation device coupled in parallel with the rectifier and the inductor. The output circuit comprises a diode coupled in series with a capacitor both coupled in parallel with the semiconductor switch. An input current sensor, and a control unit for controlling the compensation device are provided.Type: ApplicationFiled: August 1, 2003Publication date: March 25, 2004Inventors: Gerald Deboy, Dirk Ahlers, Helmut Strack, Michael Rueb, Hans Martin Weber
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Publication number: 20040007735Abstract: A semiconductor component has a semiconductor body comprising blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface coincides with the surface of the drain zone facing the source zone, such that the regions of the first and second conductivity type nested inside each other reach the drain zone.Type: ApplicationFiled: June 6, 2003Publication date: January 15, 2004Inventors: Gerald Deboy, Dirk Ahlers, Helmut Strack, Michael Rueb, Hans Martin Weber
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Publication number: 20040007736Abstract: A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.Type: ApplicationFiled: June 6, 2003Publication date: January 15, 2004Inventors: Gerald Deboy, Dirk Ahlers, Helmut Strack, Michael Rueb, Hans Martin Weber
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Publication number: 20040004249Abstract: A semiconductor component having a semiconductor body comprises a blocking pn junction, a source zone of a first conductivity type and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type. The side of the zone of the second conductivity type faces the drain zone forming a first surface, and in the region between the first surface and a second surface areas of the first and second conductivity type are nested in one another. The areas of the first and second conductivity type are variably so doped that near the first surface doping atoms of the second conductivity type predominate, and near the second surface doping atoms of the first conductivity type predominate. Furthermore a plurality of floating zones of the first and second conductivity type is provided.Type: ApplicationFiled: June 6, 2003Publication date: January 8, 2004Inventors: Gerald Deboy, Dirk Ahlers, Helmut Strack, Michael Rueb, Hans Martin Weber
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Publication number: 20030232477Abstract: A process for manufacturing of a semiconductor device comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode, the side of the zone of the second conductivity type facing the drain zone forming a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, areas of the first and second conductivity type nested in one another, comprises the step of:Type: ApplicationFiled: June 6, 2003Publication date: December 18, 2003Inventors: Gerald Deboy, Dirk Ahlers, Helmut Strack, Michael Rueb, Hans Martin Weber
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Patent number: 6649459Abstract: The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.Type: GrantFiled: March 26, 2001Date of Patent: November 18, 2003Assignee: Infineon Technologies AGInventors: Gerald Deboy, Wolfgang Friza, Oliver Häberlen, Michael Rüb, Helmut Strack
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Patent number: 6630698Abstract: The invention relates to a high-voltage semiconductor component comprising semiconductor areas (4, 5) of alternating, different conductivity types which are arranged in a semiconductor body in an alternating manner.Type: GrantFiled: November 9, 2001Date of Patent: October 7, 2003Assignee: Infineon AGInventors: Gerald Deboy, Dirk Ahlers, Helmut Strack, Michael Rueb, Hans Weber
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Publication number: 20020182517Abstract: A stencil mask for high - and ultrahigh-energy implantation of semiconductor wafers has a substrate with implantation openings through which the implantation energy can be projected onto a wafer that will be implanted. The critical dimension of the implantation openings is defined in a manner dependent on the respective implantation energy.Type: ApplicationFiled: April 30, 2002Publication date: December 5, 2002Inventor: Michael Rueb
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Patent number: 5683184Abstract: In order to ensure full-surface thrust contact and coverage despite a low production and assembly outlay, even if the bearing is mounted slightly askew, a thrust and cover washer may be used which includes an inelastic first annular washer part axially thrusting and not contacting the rotor shaft, and an elastic second annular washer part positively joined thereto and resting sealingly on the rotor shaft. The first annular washer part may advantageously be made of plastic and the second annular washer part may advantageously be made of an elastomer.Type: GrantFiled: July 20, 1995Date of Patent: November 4, 1997Assignee: Siemens AktiengesellschaftInventors: Manfred Striedacher, Michael Rueb