Abstract: A photoresist contains a polymer that has no silicon-containing groups. Consequently, no expulsion of silicon-containing compounds in gaseous form occurs on exposure to short-wave radiation. The polymer is obtained by terpolymerization of a first comonomer having a group cleavable under acid catalysis, a second comonomer having an anchor group, and a monounsaturated hydrocarbon, in which individual carbon atoms of the carbon skeleton may also be replaced by oxygen, as a third comonomer. The polymer has a low glass transition temperature, and the photoresist therefore has a good layer quality on film formation and good structurability.

Abstract: A process for the amplification of structured resists utilizes a reaction between a nucleophilic group and an isocyanate group or thiocyanate group to link an amplification agent to a polymer present in the photoresist. The isocyanate group or the thiocyanate group in addition to the nucleophilic group form a reaction pair. One of the partners is provided on the polymer and the other partner on the amplification agent. The amplification reaction takes place more rapidly than a linkage to carboxylic anhydride groups. Furthermore, the amplification reaction permits the use of polymers that have high transparency at short wavelengths of less than 200 nm, in particular 157 nm.

Abstract: A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the photoresist according to the invention can be constructed as a chemically amplified photoresist.

Abstract: The invention relates to a process for consolidating resist structures. It uses a resist that includes a film-forming polymer containing free acidic or basic groups. The amplifying agent used is a compound having a basic group or acidic group complementary to the groups of the film-forming polymer. During the amplifying reaction, the amplifying agent is coordinated to the film-forming polymer by an acid-base reaction in the course of which the amplifying agent and the anchor group of the film-forming polymer form a salt.

Abstract: Chemically amplified photoresists exhibit increased transparency at a wavelength of 157 nm. The chemically amplified photoresist includes a polymer containing first repeating units derived from a cinnamic acid or a cinnamic ester, which are at least monofluorinated or substituted by fluoroalkyl groups. Processes for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography using fluorinated cinnamic acid derivatives are also included.

Abstract: The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. After the removal of the chemically unamplified sections, the amplified sidewall structures are transferred to the substrate. The process permits a resolution of structures that are not producible using the currently customary exposure wavelengths.

Abstract: A chemically amplified photoresist contains acid-labile groups at least some of which have been fluorinated. As a result, the transparency of the photoresist at low wavelengths is increased. Further, the elimination of the fluorinated acid-labile protective groups lowers the degree of fluorination of the polymer, so raising the solubility of the polymer in polar solvents. A process for structuring substrates is also included.

Abstract: A photoresist includes a polymer which has acid-cleavable groups in its main chain. The polymer can thus be cleaved by acid into short cleavage products which can be removed from the substrate through the use of a developer. The polymer is completely or partially fluorinated, and consequently has an improved transparency to light of short wavelengths.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and aromatized. This substantially simplifies the production of amplified resist structures. Amplifying agents used include compounds having not only a reactive group for the attachment to the anchor group of the polymer, but also at least one aromatic group.

Abstract: A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.

Abstract: Imaging errors in optical exposure units for the lithographic structuring of semiconductors are determined. First, a latent image of a mask is first produced in a photoactivatable layer by exposure using the optical exposure unit to be tested. After heat treating for increasing the contrast and developing the exposed resist, the latter is treated with an amplification agent which preferably diffuses into the exposed parts of the photoresist. There, it reacts with groups of the photoresist. This leads to an increase in the layer thickness of the resist in the exposed parts. A topographical image of the surface of the photoresist, which can be created, for example, by scanning electron microscopy, then indicates imaging errors by protuberances which are located outside the image of the mask. The method permits testing of optical exposure units under production conditions and thus facilitates the adjustment and the checking of all components of the exposure system used for the production of microchips.

Abstract: A bottom resist for the two-layer technique includes a phenolic base polymer, a thermoactive compound which above a temperature of 100° C. releases a sulfonic acid, and a solvent.

Abstract: A photoresist compound achieves a uniform volume growth in a chemical expansion reaction on a chemically expandable photomask during a method for structuring a layer of the photoresist compound. The photoresist compound comprises a film-forming polymer having molecular groups that can be converted into alkali-soluble groups through acid-catalyzed separation reactions, and reactive molecular groups that can react with an expansion component so as to form a chemical bond. In addition, the photoresist compound comprises a photoacid generator that releases an acid upon exposure with radiation from a suitable wavelength range, and a thermoacid generator that releases an acid when supplied with sufficient thermal energy.

Abstract: The method enables determining imaging errors of photomasks for the lithographic structuring of semiconductors. A latent image of the mask is first produced in a photoactivatable layer by exposure. After heat treatment carried out for increasing the contrast and development of the exposed resist, the latter is treated with an amplification agent which preferably diffuses into the exposed parts of the photoresist. There, it reacts with groups of the photoresist, which leads to an increase in the layer thickness of the resist in the exposed parts. A topographical image of the surface of the photoresist, which can be created, for example, by scanning electron microscopy, then indicates imaging errors by protuberances which are located outside the image of the mask. The mask layout can be tested under production conditions and the adjustment and the checking of all components of the phototransfer system used for the production of microchips is facilitated.

Abstract: A method for creating negative resist structures is described. In the method, a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using a aqueous-alkaline developer solution and siliconized from a liquid phase. The resist contains the following constituent: a polymer, whose polarity is modified by acidic action and which contains carboxylic acid anhydride groups, preferably in latent form; a compound which releases an acid as a result of thermal treatment; a photoreactive compound, from which a base is created during the irradiation with light, x-ray, electron or ion beams; a solvent; and optionally one or more additives.

Abstract: A method for structuring a photoresist layer including preparing a substrate having a photoresist layer which is applied at least in subregions. The photoresist layer includes a film-forming polymer that comprises molecular groups that can be converted into alkali-soluble groups through acid-catalyzed separation reactions, and a photobase generator that releases a base when irradiated with light from a defined wavelength range. The photoresist layer is irradiated in subregions with light from the defined wavelength range. The photoresist layer is brought into contact with an acid over a defined period of time, during which the acid diffuses into the photoresist layer. The photoresist layer is heated to a temperature at which the acid-catalyzed separation reaction takes place and then the photoresist layer is developed. Through the acid treatment, in the developing step a greater steepness and lower degree of roughness of the resist profiles is achieved.

Abstract: A method for structuring a photoresist layer includes the steps of providing a substrate on which a photoresist layer has been applied at least in some areas. The photoresist layer includes a film-forming polymer that contains molecule groups that can be converted into alkali-soluble groups by acid-catalyzed elimination reactions. The polymer further includes a photoacid generator that, on exposure to light from a defined wavelength range, releases an acid. The polymer additionally has a thermobase generator that releases a base when the temperature is raised. The photoresist layer is initially exposed, in some areas, to light from the defined wavelength range. The photoresist layer is then heated to a temperature at which the elimination reaction catalyzed by the photolytically generated acid takes place and the thermobase generator releases a base. Finally, the photoresist layer is developed.

Abstract: A method for structuring a photoresist layer includes the steps of providing a substrate on which a photoresist layer has been applied at least in some areas. The photoresist layer includes a film-forming polymer that contains molecule groups that can be converted into alkali-soluble groups by acid-catalyzed elimination reactions. The polymer further includes a photobase generator that, on exposure to light from a defined wavelength range, releases a base. The polymer additionally includes a thermoacid generator that releases an acid when the temperature is raised. The photoresist layer is initially exposed, in some areas, to light from the defined wavelength range. The photoresist layer is then heated to a temperature at which the thermoacid generator releases an acid and the acid-catalyzed elimination reaction takes place. Finally, the photoresist layer is developed.

Abstract: A method for structuring a photoresist layer is described. A substrate has a photoresist layer containing a film-forming polymer that has a photo acid generator that liberates an acid on exposure to light from a defined wavelength range &Dgr;&lgr;1. In addition, the polymer has a photo base generator that liberates a base on exposure to light from a defined wavelength range &Dgr;&lgr;2. The photoresist layer is first exposed in parts to light from the defined wavelength range &Dgr;&lgr;1, the light being chosen so that the photo base generator is substantially inert to the irradiation. The photoresist layer is then exposed to light from the defined wavelength range &Dgr;&lgr;2, the light being chosen so that the photo acid generator is substantially inert to the irradiation. The photoresist layer is then heated at which the cleavage reaction catalyzed by the photolytically produced acid takes place, and finally the photoresist layer is developed.