Abstract: To produce N-tertiary butoxycarbonyl-maleinimide, maleinimide is reacted in the presence of a heterocyclic nitrogen compound having at least one tertiary nitrogen atom (as a base) with a more or less equimolar quantity of di-tertiary butyl-dicarbonate in a suitable solvent at temperatures of up to about 80.degree. C.

Abstract: A photoresist system that is easily structurable and, in particular, is suitable for the deep ultraviolet range is provided. An increased etching resistance to a halogen-containing plasma is produced in a lithographically generated photoresist structure by treatment with a reactant. The reactant comprises predominantly aromatic structures and includes reactive groups that are suitable for chemical reaction with further reactable groups of the photoresist. In an embodiment, the photoresist includes anhydride or epoxy groups that are suitable for structuring with deep ultraviolet light.

Abstract: Photosensitive compositions comprising a polymer and a photoactive constituent, which are able to be developed with aqueous, alkaline agents exhibit good bleaching properties in the DUV range, whereby the photoactive constituent has good solubility-inhibiting properties and does not evaporate during the drying process, when the photoactive constituent comprises diazo tetronic acid or a diazo tetronic acid derivative of the following structure: ##STR1## where the residues R are the same or different and signify H, alkyl, cycloalkyl, aryl or a silicon-containing residue.