Abstract: A golf ball with a plurality of dimples in its spherical outer surface has at least 10% of said dimples so disposed relative to one another that any two adjacent dimples overlap. The minimum overlap width is greater than 0.02 inches (0.508 mm).

Abstract: A golf ball (10) has a plurality of dimples in its outer surface. At least 10% of the dimples are so disposed relative to one another that any two adjacemt dimples overlap. The region of each overlap may have a maximum width of from 1% to 20% of the diameter of the larger of any two overlapping dimples. Preferably, the dimples are arranged in a repeating pattern over the whole surface of the ball. The pattern may be defined by projecting on to the ball the edges of a regular dodecahedron (11, 12, 13, 14, 15, 16, 17, 18, 19 and 20) so that the ball is notionally divided into twelve regular pentagons (one shown - 21).

Abstract: A spherical golf ball (10) is provided with at least 500 dimples and 30 bald patches symmetrically disposed over the surface of the ball, the disposition of the dimples being substantially the same in each of twelve regions (11) of the surface of the sphere which are defined by projecting on to the surface the edges of a regular dodecahedron. At the mid point of each edge of the dodecahedron there is a bald patch (20, 21, 22, 23, 24). Each bald patch has the shape of a spherical rectangular dumbbell, a surface area of from 1.0 to 2.5 times the mean dimple area and does not enclose any dimple or part thereof.

Abstract: A golf ball has a surface pattern of dimples arranged to provide at least 12 symmetrically disposed bald patches, a bald patch being defined in terms of its ability to accommodate a spherical rectangle of specified minimum width and area relative to the dimple size.

Abstract: A method of making an improved aluminum oxide (sapphire) gate field effect transistor wherein the capacitance-voltage characteristic of the transistor is improved by annealing the aluminum oxide at a temperature less than the growth temperature of the aluminum oxide. A transistor annealed at a temperature less than the growth temperature is provided wherein the threshold voltage is the same as if the transistor were annealed at a temperature greater than the growth temperature; the capacitance-voltage characteristic of the transistor exhibiting markedly diminished hysteresis by annealing at a temperature less than the growth temperature.

Abstract: A method is provided for the manufacture of a semi-planar silicon-on-sapphire composite comprising a sapphire substrate, an epitaxial monocrystalline silicon mesa formed adjacent the substrate and an epitaxial deposition of monocrystalline aluminum oxide surrounding the mesa. An essential step in the method is deposition of the aluminum oxide simultaneously adjacent the sapphire substrate and the monocrystalline silicon mesa whereby aluminum oxide formed adjacent the silicon mesa is polycrystalline and aluminum oxide deposited adjacent the sapphire substrate is monocrystalline. This enables the selective removal of the polycrystalline aluminum oxide adjacent the surface of the monocrystalline silicon mesa, thereby forming the composite.

Abstract: A method for making an apertured aluminum oxide substrate by selectively masking a sapphire wafer, depositing aluminum oxide adjacent the wafer and the mask, and removing the aluminum oxide deposited adjacent the mask and the mask, whereby an aperture is formed in the aluminum oxide. A composite is thus formed of an insulating substrate of monocrystalline sapphire with an insulating epitaxial layer of aluminum oxide apposed thereto, the epitaxial layer having an aperture therein which may be filled with an island of epitaxial silicon.

Abstract: An animal rearing unit enabling early weaning comprises a rectangular body with a cage or cages inside it, with air inlet means at one end of said body and air outlet means at the opposite end. A controlled temperature air heating device is provided in a preheating chamber at the inlet end of said body.