Patents by Inventor Michael Sievers
Michael Sievers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230110419Abstract: The invention relates to a method for recommending cosmetics, skin care products and/or dermatological products that are adapted to the condition of the skin.Type: ApplicationFiled: February 3, 2021Publication date: April 13, 2023Inventors: Sven CLEMANN, Soeren JASPERS, Maria del Pilar BONILLA-TOBAR, Michael SIEVERS, Sonja PAGEL-WOLFF, Juan Manuel GRADOS-LUYANDO, Katarzyna ZIOLKOWSKA
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Publication number: 20210039969Abstract: In an electrochemical treatment of a liquid in a precipitation reactor, the liquid is brought into contact with an electrically conductive electrode and an electrically conductive counter-electrode. The electrically conductive electrode comprises a flexible area electrode essentially having a two-dimensional extension. An electric voltage is applied between the electrode and the counter-electrode. The flexible area electrode is repeatedly deformed perpendicularly to its two-dimensional extension to inhibit the accumulation of substances precipitated from the liquid on the electrode and to remove substances precipitated from the liquid and accumulated on the electrode from the electrode.Type: ApplicationFiled: October 19, 2020Publication date: February 11, 2021Inventors: Ulrich Kunz, Thorben Muddemann, Michael Sievers, Dennis Haupt, Thorsten Hickmann, Rouven Henkel
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Patent number: 10800693Abstract: The invention relates to a method and an arrangement for wastewater treatment, in which at least portions of the sewage sludge contained in the wastewater (0) are subjected to a hydrolysis (8). The hydrolysis (8) is carried out as a thermal hydrolysis. After the hydrolysis step (8), a drying process is (19) carried out. The drying process (19) is a process operating with positive pressure in the steam region. At least parts of the steam resulting from the drying process (19), which operates with positive pressure, are fed (20) to the portions of the sewage sludge in the thermal hydrolysis (8).Type: GrantFiled: September 23, 2015Date of Patent: October 13, 2020Assignee: Awama GmbHInventor: Michael Sievers
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Method and apparatus for bio-electrically generating power from organic ingredients of a waste water
Patent number: 10637089Abstract: For bio-electrically generating electric power from organic ingredients of a waste water flowing in a flow direction, an anode is immersed in the waste water in a first spatial area, and oxygen is supplied to a cathode which is electrically connected to the anode and arranged in a second spatial area delimited from the first spatial area by means of a proton-permeable membrane. A voltage between the anode and the cathode is increased by a DC/DC converter located at the anode and the cathode, and a further voltage between a further anode in said or a further first spatial area and a further cathode in said or a further second spatial area is increased by a further DC/DC converter located at the further anode and the further cathode. A DC voltage link is charged with the DC/DC converter and the further DC/DC converter connected in parallel to the DC voltage link.Type: GrantFiled: May 25, 2017Date of Patent: April 28, 2020Assignees: EISENHUTH GMBH & CO. KG, TECHNISCHE UNIVERSITAET CLAUSTHALInventors: Michael Sievers, Ulrich Kunz, Thorsten Hickmann -
METHOD AND APPARATUS FOR BIO-ELECTRICALLY GENERATING POWER FROM ORGANIC INGREDIENTS OF A WASTE WATER
Publication number: 20170346122Abstract: For bio-electrically generating electric power from organic ingredients of a waste water flowing in a flow direction, an anode is immersed in the waste water in a first spatial area, and oxygen is supplied to a cathode which is electrically connected to the anode and arranged in a second spatial area delimited from the first spatial area by means of a proton-permeable membrane. A voltage between the anode and the cathode is increased by a DC/DC converter located at the anode and the cathode, and a further voltage between a further anode in said or a further first spatial area and a further cathode in said or a further second spatial area is increased by a further DC/DC converter located at the further anode and the further cathode. A DC voltage link is charged with the DC/DC converter and the further DC/DC converter connected in parallel to the DC voltage link.Type: ApplicationFiled: May 25, 2017Publication date: November 30, 2017Inventors: Michael Sievers, Ulrich Kunz, Thorsten Hickmann -
Publication number: 20170275195Abstract: The invention relates to a method and an arrangement for wastewater treatment, in which at least portions of the sewage sludge contained in the wastewater (0) are subjected to a hydrolysis (8). The hydrolysis (8) is carried out as a thermal hydrolysis. After the hydrolysis step (8), a drying process is (19) carried out. The drying process (19) is a process operating with positive pressure in the steam region. At least parts of the steam resulting from the drying process (19), which operates with positive pressure, are fed (20) to the portions of the sewage sludge in the thermal hydrolysis (8).Type: ApplicationFiled: September 23, 2015Publication date: September 28, 2017Inventor: Michael Sievers
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Patent number: 9556049Abstract: The invention describes a method for treating sewage sludge through the treatment steps of hydrolyzing (2) the sewage sludge (1) and digesting (11) the hydrolyzed sewage sludge (10), which has undergone hydrolysis (2), for the anaerobic treatment of the sewage sludge (1), and through the step of separating phosphate from the at least partially treated sewage sludge (3). Phosphate is separated after the treatment step of hydrolyzing (2) and before the treatment step of digesting (11) the hydrolyzed sewage sludge (3), wherein the sewage sludge (10), without the phosphate portion separated in the phosphate separation step, is fed to the anaerobic treatment performed through digestion (11).Type: GrantFiled: September 10, 2012Date of Patent: January 31, 2017Assignee: CNP—TECHNOLOGY WATER AND BIOSOLIDS GMBHInventors: Wolfgang Ewert, Michael Sievers, Hinnerk Bormann
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Patent number: 8933390Abstract: Technologies generally described herein relate to multilayer circuit boards with optical vias for data transmission between the layers. One or more regions may be created on a multilayer circuit board for optical vias. A transparent conducting oxide (TCO) layer can be deposited on a top and/or bottom layer of the circuit board. P-N junctions can be created over the TCO layer about the one or more regions to form optical vias as photo-emitting and/or photo-detecting components. The photo-emitting and/or photo-detecting components may be coupled to electronic components on the multilayer circuit board.Type: GrantFiled: January 30, 2014Date of Patent: January 13, 2015Assignee: Empire Technology Development LLCInventor: Michael Sievers
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Publication number: 20140374348Abstract: The invention describes a method for treating sewage sludge through the treatment steps of hydrolysing (2) the sewage sludge (1) and digesting (11) the hydrolysed sewage sludge (10), which has undergone hydrolysis (2), for the anaerobic treatment of the sewage sludge (1), and through the step of separating phosphate from the at least partially treated sewage sludge (3). Phosphate is separated after the treatment step of hydrolysing (2) and before the treatment step of digesting (11) the hydrolysed sewage sludge (3), wherein the sewage sludge (10), without the phosphate portion separated in the phosphate separation step, is fed to the anaerobic treatment performed through digestion (11).Type: ApplicationFiled: September 10, 2012Publication date: December 25, 2014Applicant: P.C.S. POLLUTION CONTROL SERVICE GMBHInventors: Wolfgang Ewert, Michael Sievers, Hinnerk Bormann
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Patent number: 8680458Abstract: Technologies generally described herein relate to multilayer circuit boards with optical vias for data transmission between the layers. One or more regions may be created on a multilayer circuit board for optical vias. A transparent conducting oxide (TCO) layer can be deposited on a top and/or bottom layer of the circuit board. P-N junctions can be created over the TCO layer about the one or more regions to form optical vias as photo-emitting and/or photo-detecting components. The photo-emitting and/or photo-detecting components may be coupled to electronic components on the multilayer circuit board.Type: GrantFiled: October 7, 2010Date of Patent: March 25, 2014Assignee: Empire Technology Development, LLCInventor: Michael Sievers
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Patent number: 8641902Abstract: The invention relates to a method for wastewater treatment utilizing an anaerobic treatment of primary sludge (PS) in a septic tank (5), and a separate treatment of excess sludge (ÜS). The excess sludge (ÜS) is separated from the primary sludge (PS) before the anaerobic treatment, solubilized in a hydrolysis treatment and liquefied, and subjected to a separate anaerobic treatment independently of the primary sludge (PS).Type: GrantFiled: March 6, 2009Date of Patent: February 4, 2014Assignee: P.C.S. Pollution Control Services GmbHInventors: Wolfgang Ewert, Michael Sievers, Hinnerk Bormann
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Publication number: 20130181110Abstract: Technologies generally described herein relate to multilayer circuit boards with optical vias for data transmission between the layers. One or more regions may be created on a multilayer circuit board for optical vias. A transparent conducting oxide (TCO) layer can be deposited on a top and/or bottom layer of the circuit board. P-N junctions can be created over the TCO layer about the one or more regions to form optical vias as photo-emitting and/or photo-detecting components. The photo-emitting and/or photo-detecting components may be coupled to electronic components on the multilayer circuit board.Type: ApplicationFiled: October 7, 2010Publication date: July 18, 2013Applicant: Empire Technology Development LLCInventor: Michael Sievers
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Publication number: 20110073136Abstract: Methods of removing gallium and gallium-containing materials from surfaces within a substrate processing chamber using a cleaning mixture are described. The cleaning mixture contains an iodine-containing compound and is introduced into the processing chamber. Iodine reacts with gallium resident within the chamber to produce thermally volatile Gal3. The Gal3 is removed using the exhaust system of the chamber by raising the temperature of the desorbing surface. Other volatile gallium-containing by-products may also be formed and removed from the exhaust system.Type: ApplicationFiled: September 9, 2010Publication date: March 31, 2011Applicant: Matheson Tri-Gas, Inc.Inventors: Robert Torres, JR., Glenn Mitchell, Michael Sievers, Adam Seymour
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Publication number: 20110014684Abstract: The invention relates to a method for wastewater treatment utilizing an anaerobic treatment of primary sludge (PS) in a septic tank (5), and a separate treatment of excess sludge (US). The excess sludge (US) is separated from the primary sludge (PS) before the anaerobic treatment, solubilized in a hydrolysis treatment and liquefied, and subjected to a separate anaerobic treatment independently of the primary sludge (PS).Type: ApplicationFiled: March 6, 2009Publication date: January 20, 2011Inventors: Wolfgang Ewert, Michael Sievers, Hinnerk Bormann
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Patent number: 7754615Abstract: A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied between the first electrode and a ring electrode surrounding the second electrode, and the DC current is monitored to determine the endpoint of the etching process. The DC current is affected by the impedance of the plasma, and therefore responds to many variations including, for example, the plasma density, electron/ion flux to exposed surfaces, the electron temperature, etc.Type: GrantFiled: July 31, 2006Date of Patent: July 13, 2010Assignees: Tokyo Electron Limited, International Business Machines Corporation (“IBM ”)Inventors: Siddhartha Panda, Richard Wise, Lee Chen, Michael Sievers
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Publication number: 20080093629Abstract: Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.Type: ApplicationFiled: December 13, 2007Publication date: April 24, 2008Applicant: International Business Machines CorporationInventors: Huajie Chen, Judson Holt, Rangarajan Jagannathan, Wesley Natzle, Michael Sievers, Richard Wise
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Publication number: 20080026488Abstract: A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied between the first electrode and a ring electrode surrounding the second electrode, and the DC current is monitored to determine the endpoint of the etching process. The DC current is affected by the impedance of the plasma, and therefore responds to many variations including, for example, the plasma density, electron/ion flux to exposed surfaces, the electron temperature, etc.Type: ApplicationFiled: July 31, 2006Publication date: January 31, 2008Applicants: IBM Corporation, TOKYO ELECTRON LIMITEDInventors: Siddhartha Panda, Richard Wise, Lee Chen, Michael Sievers
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Publication number: 20070175016Abstract: The invention relates to apparatus and methods to shore an airplane to facilitate the replacement of one or more airplane parts, such as an airplane's upper skin panels, lower skin panels, and/or window assemblies. In one aspect of the invention, a method is provided which comprises disposing at least one beam underneath an airplane floor structure, supporting the beam with at least one jack which extends through a hole in a lower skin of the airplane, and removing and replacing at least one airplane part.Type: ApplicationFiled: February 2, 2006Publication date: August 2, 2007Inventors: Michael Sievers, Timothy George
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Publication number: 20070068234Abstract: An atomic force microscope (AFM) having a hollowed cantilever ending in a hollowed tip is described, wherein the end of the tip is immersed in a liquid. The AFM includes a gas source that provides and controls the flow of gas into the hollowed tip. The flow rate of the gas is regulated to form and sustain a static bubble at the end of the hollowed tip. The formation of the static bubble is verified optically. A gas control manifold allows an easy switch of gasses that are fed into the probe tip. The gas that is introduced acts like a chemically modified tip, and is selected to increase the deflection signal for the material of interest. The tip of the present invention is a highly versatile AFM tool that is easily adjusted to provide optimized imaging for a wide variety of materials, in contrast with standard AFMs that require a plethora of chemically modified tips to obtain equivalent results.Type: ApplicationFiled: September 29, 2005Publication date: March 29, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael Sievers, Siddhartha Panda, Richard Wise
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Publication number: 20070056930Abstract: Polysilicon etching methods are disclosed that employ a gas flow including perfluorocyclopentene (C5F8) and nitrogen trifluoride (NF3). The etching methods achieved a substantially vertical profile and smoother surfaces, and may achieve a 3sigma variation as low as 3.0 nm.Type: ApplicationFiled: September 14, 2005Publication date: March 15, 2007Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, SONY CORPORATION, SONY ELECTRONICS INC.Inventors: Seiji Iseda, Siddhartha Panda, Michael Sievers, Richard Wise