Abstract: Described herein are methods for using compounds that activate pyruvate kinase.

Abstract: Described herein are methods for using compounds that activate pyruvate kinase.

Abstract: Methods of treating and evaluating subjects having neoactive mutants of IDH (e.g., IDH1 or IDH2).

Abstract: Methods and compositions for treating and evaluating subjects having a neoactive mutation at residue 97 of IDH1 or 137 of IDH2.

Abstract: The present invention provides novel endophytic yeast strains capable of metabolizing both pentose and hexose sugars. Methods of producing ethanol and xylitol using the novel endophytic yeast are provided herein. Also provided are methods of fixing nitrogen and fertilizing a crop using the novel endophytic yeast strains provided herein.

Abstract: Methods of treating and evaluating subjects having neoactive mutants are described herein.

Abstract: Described herein are methods for using compounds that activate pyruvate kinase.

Abstract: The present invention provides novel endophytic yeast strains capable of metabolizing both pentose and hexose sugars. Methods of producing ethanol and xylitol using the novel endophytic yeast are provided herein. Also provided are methods of fixing nitrogen and fertilizing a crop using the novel endophytic yeast strains provided herein.

Abstract: Various semiconductor workpieces and methods of dicing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a channel in a metallization structure on a backside of a semiconductor workpiece. The semiconductor workpiece includes a substrate. The channel is in substantial alignment with a dicing street on a front side of the semiconductor chip.

Abstract: A method of manufacturing is provided that includes fabricating a first plurality of electrically functional interconnects on a front side of a first semiconductor chip and fabricating a first plurality of electrically non-functional interconnects on a back side of the first semiconductor chip. Additional chips may be stacked on the first semiconductor chip.

Abstract: Methods and compositions for treating and evaluating subjects having a neoactive mutation at residue 97 of IDH1 or 137 of IDH2.

Abstract: Methods of treating and evaluating subjects having neoactive mutants of IDH (e.g., IDH1 or IDH2).

Abstract: A method of manufacturing is provided that includes fabricating a first plurality of electrically functional interconnects on a front side of a first semiconductor chip and fabricating a first plurality of electrically non-functional interconnects on a back side of the first semiconductor chip. Additional chips may be stacked on the first semiconductor chip.

Abstract: A method of manufacturing is provided that includes fabricating a first set of interconnect structures on a side of a first semiconductor substrate. The first semiconductor substrate is operable to have at least one of plural semiconductor substrates stacked on the side. The first set of interconnect structures is arranged in a pattern. Each of the plural semiconductor substrates has a second set of interconnect structures arranged in the pattern, one of the plural semiconductor substrates has a smallest footprint of the plural semiconductor substrates. The pattern has a footprint smaller than the smallest footprint of the plural semiconductor substrates.

Abstract: A method of manufacturing is provided that includes forming a first proximity interconnect on a first side of a first semiconductor chip and a first plurality of interconnect structures projecting from the first side. A second proximity interconnect is formed on a second side of a second semiconductor chip and a second plurality of interconnect structures are formed projecting from the second side. The second semiconductor chip is coupled to the first semiconductor chip so that the second side faces the first side and the first interconnect structures are coupled to the second interconnect structures. The first and second proximity interconnects cooperate to provide a proximity interface. The coupling of the first interconnect structures to the second interconnect structures provides desired vertical and lateral alignment of the first and second proximity interconnects.

Abstract: Various semiconductor workpieces and methods of dicing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a channel in a metallization structure on a backside of a semiconductor workpiece. The semiconductor workpiece includes a substrate. The channel is in substantial alignment with a dicing street on a front side of the semiconductor chip.

Abstract: The invention relates to methods identifying compounds for the treatment of cell proliferation-related disorders, e.g., proliferative disorders such as cancer.

Abstract: Methods of treating and evaluating subjects having neoactive mutants of IDH (e.g., IDH1 or IDH2).

Abstract: The present invention relates to inhibitors of p38, a mammalian protein kinase involved cell proliferation, cell death and response to extracellular stimuli. The invention also relates to methods for producing these inhibitors. The invention also provides pharmaceutical compositions comprising the inhibitors of the invention and methods of utilizing those compositions in the treatment and prevention of various disorders.

Abstract: A semiconductor device disclosed herein includes a conductive connection structure having a stepped profile that serves as a stress relief feature. The conductive connection structure includes a stress buffer arrangement for a contact pad. The stress buffer arrangement has a stepped via that terminates at the contact pad, and the stepped via has a plurality of inwardly sloped and concentric sections in a stacked orientation. The connection structure also includes underbump metallization overlying at least a portion of the contact pad and lining the stepped via, and a conductive connection element coupled to the underbump metallization. The conductive connection element fills the lined recess.