Abstract: An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 1019 dopant atoms per cm3 or greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.

Abstract: Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.

Abstract: A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced at the light generation layer is more efficiently dissipated due to the presence of the HTC layer. Alternatively, a light generating device such as a VCSEL includes a light generation layer, a top reflector, and a high thermal conductivity (HTC) bottom reflector. Heat produced at the light generation layer is more efficiently dissipated due to the fact that the bottom reflector is a HTC DBR reflector having lower thermal resistivity than a conventional DBR reflector.

Abstract: In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: A high-sensitivity sensor with improved stability includes nanostructure-based sensors that are arranged such that a first nanostructure-based sensor (“shielded sensor”) is shielded from potential exposure to an environmental factor of interest and a second nanostructure-based sensor (“exposed sensor”) is allowed potential exposure to an environmental factor of interest. Further, all of the nanostructure-based sensors are arranged to allow common exposure to environmental factors not of interest. Thus, relative changes in properties, such as electrical resistance, of the shielded nanostructure-based sensor versus changes in properties of the exposed nanostructure-based sensor are used for detecting an environmental factor of interest.

Abstract: In one embodiment, there is disclosed a waveguide medium using total internal reflection to create a relatively sharp (approximately 90°) bend for optical signals traversing the waveguide. A discontinuity of the medium (such as air) is used to create a turning mirror within the waveguide path. By curving the discontinuity, the entire input optical signal is focused into the output portion of the waveguide, thereby compensating for the diffraction loss of the optical signal at the bend. In one embodiment in order to facilitate proper alignment of the masks certain portions of the waveguide on a first mask are extended (widened) beyond their optimum physical size. This extended portion is then used to position an edge of a second mask, such that optical signal scatter caused by the extended portions of the waveguide are compensated for by adjusting the curvature.

Abstract: The present disclosure suggests various microelectronic component assembly designs and methods for manufacturing microelectronic component assemblies. In one particular implementation, a microelectronic component assembly includes a microelectronic component, at least two leads, and at least two bond wires. Each of the leads may have a reduced-thickness inner length adjacent terminals of the microelectronic component and a body having an outer surface spaced farther from the microelectronic component than a bond surface of the inner length. Each of the bond wires couples the microelectronic component to one of the leads and has a maximum height outwardly from the microelectronic component that is no greater than the height of the outer surface of the lead.

Abstract: A non-contact test method and apparatus is disclosed that can be used to test OLED flat panel TFTs. An ionized gas is used to supply current to the device under test.

Abstract: Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.

Abstract: Embodiments of the invention involve a monolithic vertical configuration for coupling a ring resonator and a bus waveguides. The monolithic vertical coupling arrangement, with the epitaxial grown coupling between the waveguide and the resonator, provides control of the coupling coefficient. The vertical coupling arrangement allows for different material compositions in the waveguide and resonator structures, e.g. active quantum well resonators and transparent waveguides, to facilitate the design of active WDM components.

Abstract: A light modulator having a waveguide and a resonator is disclosed. The waveguide routes light of wavelength ? past the resonator. The resonator is coupled to the waveguide such that a portion of the light is input to the resonator, the resonator having a resonance at ?. The resonator includes a gain region in which light of wavelength ? is amplified and an absorption region in which light of wavelength ? is absorbed, the absorption region having first and second states, the first state absorbing less light of wavelength ? than the second state, the state of the absorption region is determined by an electrical signal coupled to the absorption region. The gain region provides a gain that compensates for the light absorption in the first state. In one embodiment, the waveguide and resonator are critically coupled when the absorption region is in the second state.

Abstract: A system for automated execution of storage-related tasks includes a storage server configured to receive a storage task descriptor, initiate execution of a storage task corresponding to the storage task descriptor, and provide notification to one or more hosts in response to completion of the storage task. The storage server may also provide notification to the hosts in response to commencement of the storage task. The system also includes a host configured to receive the notifications and initiate execution of one or more local tasks in response to receiving the notifications. In certain embodiments, notifications occur through notification messages that contain a local task descriptor describing the tasks to be performed on the host. The present invention facilitates coordinated execution of storage-related tasks associated with storage devices with application-related tasks executing on a host.

Abstract: The method comprises forming barrier layers of AlxGa1-xAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.

Abstract: A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced at the light generation layer is more efficiently dissipated due to the presence of the HTC layer. Alternatively, a light generating device such as a VCSEL includes a light generation layer, a top reflector, and a high thermal conductivity (HTC) bottom reflector. Heat produced at the light generation layer is more efficiently dissipated due to the fact that the bottom reflector is a HTC DBR reflector having lower thermal resistivity than a conventional DBR reflector.

Abstract: A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.