Abstract: Apparatus, systems, and methods for conducting a silicon containing material removal process on a workpiece are provided. In one example implementation, the method can include generating species from a process gas in a first chamber using an inductive coupling element. The method can include introducing a fluorine containing gas with the species to create a mixture. The mixture can include exposing a silicon structure of the workpiece to the mixture to remove at least a portion of the silicon structure.

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.

Abstract: Systems and methods for processing workpieces, such as semiconductor workpieces are provided. In one example implementation, an apparatus includes a first processing chamber comprising a first processing station and a second processing station. The first processing station and the second processing station are separated by a first distance. The apparatus includes one or more second processing chambers. The one or more second processing chambers collectively comprising a third processing station and a fourth processing station. The third processing station and the fourth processing station are separated by a second distance. The second distance is different from the first distance. A workpiece handling robot is configured to pick up the at least one first workpiece and the at least one second workpiece from the first and second processing stations and to drop off the at least one first workpiece and the second workpiece at the third and fourth processing stations.

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include placing the workpiece on a workpiece support in a processing chamber. The method can include admitting a process gas into the processing chamber. The process gas can include an ozone gas. The method can include exposing the silicon nitride layer and the low-k dielectric layer to the process gas to modify a surface wetting angle of the silicon nitride layer.

Abstract: Systems and methods for thermal processing of a workpiece at low temperatures are disclosed. In one example implementation, a thermal processing apparatus includes a processing chamber having a workpiece support. The workpiece support can be configured to support a workpiece. The apparatus can include one or more heat sources configured to emit electromagnetic radiation in a first wavelength range to heat the workpiece to a processing temperature. The processing temperature can be in the range of about 50° C. to 150° C. The apparatus can include one or more sensors configured to obtain a measurement of electromagnetic radiation in a second wavelength range when the workpiece is at the processing temperature. The second wavelength range can be different from the first wavelength range.

Abstract: A method for processing a workpiece is provided. The method can include placing a workpiece on a susceptor disposed within a processing chamber. The method can include performing a multi-cycle thermal treatment process on the workpiece in the processing chamber. The multi-cycle thermal treatment process can include at least two thermal cycles. Each thermal cycle of the at least two thermal cycles can include performing a first treatment on the workpiece at a first temperature; heating a device side surface of the workpiece to a second temperature in less than one second; performing a second treatment on the workpiece at approximately the second temperature; and cooling the workpiece subsequent to performing the second treatment.

Abstract: Post exposure bake methods are provided. In one example, a method includes placing a workpiece having a photoresist layer on a workpiece support disposed in a processing chamber. The method includes exposing the photoresist to photons of a wavelength through a photomask. The method includes performing a post exposure bake heating process on the workpiece with the photoresist heating layer. The post exposure bake heating process can include heating the workpiece with both a radiant heat source and a second heat source disposed in the workpiece support until a temperature of the workpiece reaches a post exposure bake setpoint temperature.

Abstract: A method for processing a workpiece is provided. The method can include placing a workpiece on a susceptor disposed within a processing chamber. The method can include performing a multi-cycle thermal treatment process on the workpiece in the processing chamber. The multi-cycle thermal treatment process can include at least two thermal cycles. Each thermal cycle of the at least two thermal cycles can include performing a first treatment on the workpiece at a first temperature; heating a device side surface of the workpiece to a second temperature in less than one second; performing a second treatment on the workpiece at approximately the second temperature; and cooling the workpiece subsequent to performing the second treatment.

Abstract: Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.

Abstract: Thermal imaging of heat sources in thermal processing systems for determination of workpiece temperature are provided. In one example, a thermal processing apparatus can include a processing chamber, a workpiece support, a plurality of heat sources configured to heat a workpiece, and at least one camera. The at least one camera can capture one or more images of thermal radiation of the plurality of heat sources during thermal treatment of the workpiece. In one example, a method for calibrating the camera can include obtaining the one or more images of thermal radiation of at least one heat source, obtaining one or more reference signals indicative of irradiation of the at least one heat source, and calibrating the camera based at least in part on a comparison between the one or more images of thermal radiation and the one or more reference signals indicative of irradiation of the heat source.

Abstract: Methods for material removal of a film, such as a metal nitride film, from a workpiece are provided. One example implementation is directed to a method for processing a workpiece. The workpiece can include a film (e.g., a metal nitride film). The method can include generating one or more species (e.g., hydrogen radicals, excited inert gas molecules, etc.). The method can include mixing alkyl halide with the one or more species to generate one or more alkyl radicals. The method can include exposing the film to the one or more alkyl radicals.

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

Abstract: Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., arears proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

Abstract: Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece having a semiconductor material and a carbon containing layer (e.g., photoresist) can include a surface treatment process on the workpiece. The surface treatment process can include generating one or more species in a first chamber (e.g., a plasma chamber). The surface treatment process can include mixing one or more hydrocarbon radicals with the species to create a mixture. The surface treatment process can include exposing the carbon containing layer to the mixture in a second chamber (e.g., a processing chamber).

Abstract: Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. The pedestal is operable to support a workpiece. The plasma processing apparatus includes a plasma chamber disposed above the processing chamber in a vertical direction. The plasma chamber includes a dielectric sidewall. The plasma processing apparatus includes a separation grid separating the processing chamber from the plasma chamber. The plasma processing apparatus includes a first plasma source proximate the dielectric sidewall. The first plasma source is operable to generate a remote plasma in the plasma chamber above the separation grid. The plasma processing apparatus includes a second plasma source. The second plasma source is operable to generate a direct plasma in the processing chamber below the separation grid.

Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece in a processing chamber. The processing chamber can be separated from a plasma chamber by a separation grid assembly. The method can include forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber. The method can include performing a surface treatment process on the workpiece in the processing chamber using a second plasma generated in the plasma chamber.

Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.

Abstract: The present system is directed in various embodiments to rotational atherectomy systems and methods generally. More specifically, a method for methodically softening and disrupting calcification within the wall of a biological conduit or lumen. This result is achieved by use of at least one eccentric head that, during high-speed rotation within the exemplary lumen, produces a combination of a low-frequency orbital motion comprising a force that is exerted against the lumen wall, with concomitant deflection of same, and a high-frequency pulsatile frequency, also with concomitant exertion of force against the lumen wall and deflection of same. These force-driven deflections produce shockwaves within the layers of the exemplary artery's wall layers, resulting in systematic disruptions of any calcification within the intimal and/or medial layers of the subject artery. In addition, any calcification within the occlusion is also softened and disrupted, increasing compliance of the vessel and/or lesion.