Abstract: A thin film battery may include: a cathode current collector, the cathode current collector being disposed in a first plane; a device stack disposed on the cathode current collector, the device stack comprising an anode current collector, the anode current collector being disposed in a second plane, above the first plane; and a thin film encapsulant, the thin film encapsulant disposed above the device stack, wherein the thin film encapsulant comprises a first portion extending along a surface of the anode current collector and a second portion extending along a plurality of sides of the device stack, wherein the cathode current collector extends under the second portion of the thin film encapsulant and outside of the thin film encapsulant; and wherein the anode current collector extends under the first portion of the thin film encapsulant and outside of the thin film encapsulant.

Abstract: A thin film device. The thin film device may include: an active device region, the active device region comprising a diffusant; and a thin film encapsulant disposed adjacent to the active device region and encapsulating at least a portion of the active device region, the thin film encapsulant comprising: a first layer, the first layer disposed immediately adjacent the active device region and comprising a soft and pliable material; and a second layer disposed on the first layer, the second layer comprising a rigid dielectric material or rigid metal material.

Abstract: A thin film device. The thin film device may include: an active device region, the active device region comprising a diffusant; and a thin film encapsulant disposed adjacent to the active device region and encapsulating at least a portion of the active device region, the thin film encapsulant comprising: a first layer, the first layer disposed immediately adjacent the active device region and comprising a soft and pliable material; and a second layer disposed on the first layer, the second layer comprising a rigid dielectric material or rigid metal material.

Abstract: A device for maskless thin film etching, including an ablation tool adapted to emit an ablative output for etching a surface, a gas jet associated with a source of carrier gas and adapted to emit a stream of the carrier gas at an area of the surface where the output of the ablation tool impinges, and a suction member associated with a vacuum source and adapted to collect ablated particulate from the area of the surface where the output of the ablation tool impinges, wherein the ablation tool, the gas jet, and the suction member are mounted adjacent one another.

Abstract: A device. The device may include: a substrate, the substrate comprising: an upper surface; and a recess extending from the upper surface into the substrate; an active device region, the active device region disposed within the recess and having a first thickness; and an encapsulant, the encapsulant disposed over the recess and over the active device region, wherein the encapsulant has a second thickness, wherein the encapsulant extends above the upper surface of the substrate to a first distance, and wherein the first distance is less than a sum of the first thickness and second thickness.

Abstract: A thin film battery may include: a contact layer, the contact layer disposed in a first plane and comprising a cathode current collector and an anode current collector pad; a device stack disposed on the cathode current collector, the device stack comprising a cathode and solid state electrolyte; an anode current collector disposed on the device stack; a thin film encapsulant, the thin film encapsulant disposed over the device stack, wherein the solid state electrolyte encapsulates the cathode.

Abstract: A system and method for in-process yield evaluation and correction in an array type of device are provided. The system and method include measuring electrical resistance between individual GATE lines, DATA lines, a DATA bus I/O pad, and a GATE bus I/O pad; and analyzing the measured electrical resistance to identify at least one of the following: GATE line open defects, GATE line bridge defects, DATA line open defects, DATA line bridge defects, and interlayer shunt defects.

Abstract: A system and method for in-process yield evaluation and correction in an array type of device are provided. The system and method include measuring electrical resistance between individual GATE lines, DATA lines, a DATA bus I/O pad, and a GATE bus I/O pad; and analyzing the measured electrical resistance to identify at least one of the following: GATE line open defects, GATE line bridge defects, DATA line open defects, DATA line bridge defects, and interlayer shunt defects.

Abstract: The presently described embodiments are directed to a calibration method and system for thin film thermistors that are locally heated with integrated thin film heaters. Initially, print head temperature is either measured or referenced. Then, transient thermistor resistances are measured and used to determine the thermistor resistance at a higher temperature. Notably, this calibration method is advantageously implemented as a step of an existing process without having to expose the print heads to operating temperatures. In some implementations of the presently described embodiments, trimming of the thermistors may be required once calibrated.

Abstract: Disclosed is a MEMS device which comprises at least one shape memory material such as a shape memory alloy (SMA) layer and at least one stressed material layer. Examples of such MEMS devices include an actuator, a micropump, a microvalve, or a non-destructive fuse-type connection probe. The device exhibits a variety of improved properties, for example, large deformation ability and high energy density. Also provided is a method of easily fabricating the MEMS device in the form of a cantilever-type or diaphragm-type structure.

Abstract: Disclosed is a MEMS device which comprises at least one shape memory material such as a shape memory alloy (SMA) layer and at least one stressed material layer. Examples of such MEMS devices include an actuator, a micropump, a microvalve, or a non-destructive fuse-type connection probe. The device exhibits a variety of improved properties, for example, large deformation ability and high energy density. Also provided is a method of easily fabricating the MEMS device in the form of a cantilever-type or diaphragm-type structure.

Abstract: The presently described embodiments are directed to a calibration method and system for thin film thermistors that are locally heated with integrated thin film heaters. Initially, print head temperature is either measured or referenced. Then, transient thermistor resistances are measured and used to determine the thermistor resistance at a higher temperature. Notably, this calibration method is advantageously implemented as a step of an existing process without having to expose the print heads to operating temperatures. In some implementations of the presently described embodiments, trimming of the thermistors may be required once calibrated.

Abstract: The presently described embodiments are directed to a calibration method and system for thin film thermistors that are locally heated with integrated thin film heaters. Initially, print head temperature is either measured or referenced. Then, transient thermistor resistances are measured and used to determine the thermistor resistance at a higher temperature. Notably, this calibration method is advantageously implemented as a step of an existing process without having to expose the print heads to operating temperatures. In some implementations of the presently described embodiments, trimming of the thermistors may be required once calibrated.

Abstract: A liquid drop ejector comprising a jet stack, thin film or thick film heaters formed on the surface of the jet stack, and at least one thin film or thick film temperature sensor operative to provide feedback temperature control for the thin film or thick film heater elements is provided. In one form, the liquid drop ejector also has the thin film or thick film heater elements grouped in segments that are operative to be individually controlled. In addition, in another form, the signal lines provided to the liquid drop ejector are patterned to allow for more uniform resistance over the span of the liquid drop ejector.

Abstract: Disclosed is a MEMS device which comprises at least one shape memory material such as a shape memory alloy (SMA) layer and at least one stressed material layer. Examples of such MEMS devices include an actuator, a micropump, a microvalve, or a non-destructive fuse-type connection probe. The device exhibits a variety of improved properties, for example, large deformation ability and high energy density. Also provided is a method of easily fabricating the MEMS device in the form of a cantilever-type or diaphragm-type structure.

Abstract: An acoustic ink print head includes an array of individual emitters. Each of the emitters have a corresponding transducer with a lower electrode, a separate layer of a piezo-electric material located on the lower electrode, and a separate upper electrode provided on the upper surface of the piezo-electric layer. The upper and lower electrodes are connected to a source of conventionally modulated RF power. A dielectric layer is deposited on top of this structure and lenses are etched into the top of the dielectric layer. The lenses focus energy generated by the transducer to a region of the upper surface of a body of liquid located above the transducer. The lenses concentrate sound waves from the transducers thereby disturbing the surface and causing droplets to be emitted. The print head is formed as an array of individual emitters. The upper electrodes of the individual emitter array have varying surface areas dependent upon their location within a row of electrodes and their output efficiencies.