Abstract: A method for removing a protective film from a semiconductor component includes providing the semiconductor component having the protective film on a component upper side. The protective film protrudes beyond the component upper side at a longitudinal side. The method also includes separating the protective film from the component upper side with a removal tool which has a removal opening. The separating of the protective film from the component upper side includes guiding the removal tool next to the semiconductor component along the longitudinal side in a direction transverse to the component upper side while it bears on the protective film so that the protective film is bent by the removal tool in a direction toward a side face of the semiconductor component, and retracting the removal tool so that the protective film catches in the removal opening and the protective film is detached from the component upper side.

Abstract: In an embodiment a pixel for a multi-pixel LED module includes a first light-emitting semiconductor chip having a first upper chip side and a first lead-frame section having a first upper side, a first contacting protrusion and a second contacting protrusion, wherein the first contacting protrusion and the second contacting protrusion extend from the first upper side, and wherein the first light-emitting semiconductor chip is embedded in an electrically insulating material such that the first upper side is covered by the electrically insulating material and the first upper chip side and the contacting protrusions are exposed.

Abstract: An optoelectronic semiconductor component includes at least one optoelectronic semiconductor chip, a plurality of lead frame parts, a casting body that mechanically connects the lead frame parts to one another so that a mounting carrier is formed on which the at least one optoelectronic semiconductor chip is mounted, and a plurality of metallizations, wherein the lead frame parts are each formed in one piece and comprise at least one through-plating region and at least one mounting region, the through-plating regions each penetrate the mounting carrier and the mounting regions project beyond the casting body, and the metallizations each start from at least one of the through-plating regions and extend directly onto the casting body laterally next to the at least one associated through-plating region.

Abstract: In at least one embodiment, the optoelectronic component comprises an optoelectronic semiconductor chip with an emission side and a rear side opposite the emission side. Furthermore, the component comprises a housing body with a top side and an underside opposite the top side, and a metal layer on the top side of the housing body. During proper operation, the semiconductor chip emits primary electromagnetic radiation via the emission side. The semiconductor chip is embedded in the housing body and laterally surrounded by the housing body. The emission side is on the rear side and the top side is downstream of the underside along a main emission direction of the semiconductor chip. The metal layer is at least partially reflecting or absorbing radiation generated by the optoelectronic component.

Abstract: In one embodiment, an optoelectronic semiconductor device includes at least two lead frame parts and an optoelectronic semiconductor chip which is mounted in a mounting region on one of the lead frame parts. The lead frame parts are mechanically connected to one another via a casting body. The semiconductor chip is embedded in the cast body. In the mounting region the respective lead frame part has a reduced thickness. An electrical line is led over the cast body from the semiconductor chip to a connection region of the other of the lead frame parts. In the connection region, the respective lead frame part has the full thickness. From the connection region to the semiconductor chip the electrical line does not overcome any significant difference in height.

Abstract: A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.

Abstract: The invention relates to a lead frame assembly comprising a plurality of regularly arranged lead frames, each of which is suitable for electrically contacting components, comprises at least two lead frame elements distanced laterally by a recess and which are provided as electrical connections of different polarity, and has at least one anchoring element, which is suitable for anchoring a housing body of the component, the lead frame elements being thinned, flat regions of the lead frame, and the at least one anchoring element protrudes from a plane of the lead frame elements in the form of a pillar, and a plurality of connection elements, which in each case connects two lead frame elements of adjacent lead frames to one another, the two connected lead frame elements being provided as terminals of different polarity.

Abstract: In one embodiment, the optoelectronic semiconductor device comprises at least two metallic lead frame parts and a circuit chip on the lead frame parts. An electrically insulating and opaque matrix material mechanically connects the lead frame parts. The circuit chip is embedded in the matrix material, so that a carrier is formed by the matrix material together with the lead frame parts and the circuit chip. An optoelectronic semiconductor chip is provided on a carrier upper side. Furthermore, the semiconductor device comprises at least one optical component on the carrier upper side.

Abstract: In an embodiment a pixel for a multi-pixel LED module includes a first light-emitting semiconductor chip having a first upper chip side and a first lead-frame section having a first upper side, a first contacting protrusion and a second contacting protrusion, wherein the first contacting protrusion and the second contacting protrusion extend from the first upper side, and wherein the first light-emitting semiconductor chip is embedded in an electrically insulating material such that the first upper side is covered by the electrically insulating material and the first upper chip side and the contacting protrusions are exposed.

Abstract: A method of producing a surface-mountable multi-chip component includes providing a chip arrangement including a metallic conductor structure exposed at a rear side, a plurality of semiconductor chips and an housing material; and forming a solder stop coating on a rear side of the chip arrangement, wherein the solder stop coating separates connection regions of the conductor structure.

Abstract: In one embodiment, an optoelectronic semiconductor device includes at least two lead frame parts and an optoelectronic semiconductor chip which is mounted in a mounting region on one of the lead frame parts. The lead frame parts are mechanically connected to one another via a casting body. The semiconductor chip is embedded in the cast body. In the mounting region the respective lead frame part has a reduced thickness. An electrical line is led over the cast body from the semiconductor chip to a connection region of the other of the lead frame parts. In the connection region, the respective lead frame part has the full thickness. From the connection region to the semiconductor chip the electrical line does not overcome any significant difference in height.

Abstract: In at least one embodiment, the optoelectronic component comprises an optoelectronic semiconductor chip with an emission side and a rear side opposite the emission side. Furthermore, the component comprises a housing body with a top side and an underside opposite the top side, and a metal layer on the top side of the housing body. During proper operation, the semiconductor chip emits primary electromagnetic radiation via the emission side. The semiconductor chip is embedded in the housing body and laterally surrounded by the housing body. The emission side is on the rear side and the top side is downstream of the underside along a main emission direction of the semiconductor chip. The metal layer is at least partially reflecting or absorbing radiation generated by the optoelectronic component.

Abstract: A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.

Abstract: An optoelectronic component includes a carrier, and a light source arranged on a surface of the carrier, said light source including at least one luminous surface formed by at least one light-emitting diode, wherein a transparent converter-free spacer is arranged on the luminous surface such that a distance is formed between the luminous surface and a spacer surface of the spacer facing away from the luminous surface, and wherein the light source is potted by a potting compound such that the spacer surface is formed extending flush with a potting compound surface facing away from the surface of the carrier and a surface formed by a spacer surface and the potting compound surface is plane.

Abstract: A method of producing a surface-mountable multi-chip component includes providing a chip arrangement including a metallic conductor structure exposed at a rear side, a plurality of semiconductor chips and an housing material; and forming a solder stop coating on a rear side of the chip arrangement, wherein the solder stop coating separates connection regions of the conductor structure.

Abstract: A method of producing a housing for an electronic device including: in a three-dimensional molding process, a housing part assembly consisting of a plurality of contiguous plastics housing parts is produced using a plastics material; and the housing part assembly is split up into a plurality of individual plastics housing parts by a separation procedure, each one of the parts forming at least a part of a housing, wherein the molding process is transfer molding or compression molding, a mold is used for the molding process including mold pins by which first side faces molded on during the molding process are produced on each of the plastics housing parts, the separation procedure results in second side faces being produced on each of the plastics housing parts, and the first and second side faces form outer faces of the plastics housing parts.

Abstract: An optoelectronic component includes a carrier, a light source formed on the carrier, the light source having at least one luminous face formed by one or more light emitting diodes, wherein an at least partly transparent lamina is arranged on the luminous face, the lamina having a surface facing the luminous face and a surface facing away from the luminous face, wherein at least one conversion layer and a color scattering layer for generating a color by light scattering are arranged on at least one of the facing and facing-away surfaces, wherein the conversion layer is arranged upstream of the color scattering layer relative to an emission direction of light from the luminous face, such that light emitted by the luminous face can first be converted and then be scattered.

Abstract: A surface-mountable optoelectronic component has a radiation passage face, an optoelectronic semiconductor chip and a chip carrier. A cavity is formed in the chip carrier and the semiconductor chip is arranged in the cavity. A molding surrounds the chip carrier at least in places. The chip carrier extends completely through the molding in a vertical direction perpendicular to the radiation passage face.

Abstract: The invention relates to a method for producing an electronic component with a carrier element (100), with the steps: producing the carrier element (100), having the steps A) providing a first metal layer (1) comprising a first metal material, wherein the first metal layer (1) has a first and a second main surface (10, 11) which face away from one another, B) applying a second metal layer (2) comprising a second metal material on at least one of the main surfaces (10, 11), C) converting a part of the second metal layer (2) into a dielectric ceramic layer (3), wherein the second metal material forms a component of the ceramic layer (3), and the ceramic layer (3) forms a surface (30) which faces away from the first metal layer (1) and is above the second metal layer (2);—arranging at least one electronic semiconductor chip (21) on the carrier element (100). The invention further relates to an electronic component with a carrier element (100).

Abstract: An optoelectronic component includes a housing having a first cavity open toward an upper side of the housing, and a second cavity open toward the upper side of the housing, wherein the first cavity and the second cavity connect by a connecting channel, an optoelectronic semiconductor chip is arranged in the first cavity, a potting material is arranged in a region of the first cavity enclosing the optoelectronic semiconductor chip, a bond wire is arranged between an electrical contact surface of the optoelectronic semiconductor chip and a bond surface of the housing, and the bond surface is arranged in the connecting channel.