Abstract: A method for manufacturing a laminate including a support and a substrate having a back surface to be processed and a non-processed surface, the support and the non-processed surface being bonded via a temporary adhesive material. The method includes the steps: (a) laminating the temporary adhesive material on either or both of the support and the non-processed surface of the substrate; (b) preheating the support and the substrate before the bonding is started; and (c) bonding the support and the substrate via the temporary adhesive material. In the step (b), the substrate is heated to a temperature of 50° C. or more and 250° C. or less, while the support is heated to a temperature of 50° C. or more and 250° C. or less but different from that of the substrate. In the step (c), the bonding is started with the temperatures of the support and the substrate after the preheating being different.

Abstract: A method for producing a thin wafer includes: separating the support body from the laminate by irradiating a wafer laminate, which includes a support body, an adhesive layer formed on the support body, and a wafer laminated with a surface thereof including a circuit plane facing the adhesive layer, with light from a side of the support body of the wafer laminate; and after separating, removing a resin layer remaining on the wafer from the wafer by peeling, wherein the adhesive layer includes only a resin layer A with a light-blocking property, and a resin layer B including a thermosetting silicone resin or a non-silicone thermoplastic resin in this order from the side of the support body.

Abstract: To provide a wafer laminate which permits easy bonding between a support and a wafer, permits easy delamination of a wafer from a support, enables enhanced productivity of a thin wafer, and is suited to production of a thin wafer, and for a method of producing the wafer laminate. The wafer laminate includes a support, an adhesive layer formed on the support, and a wafer laminated in such a manner that its front surface having a circuit surface faces the adhesive layer. The adhesive layer includes a light-shielding resin layer A and a non-silicone thermoplastic resin-coating resin layer B in this order from the support side. The resin layer A is composed of a resin that contains a repeating unit having a condensed ring, and the resin layer B has a storage elastic modulus E? at 25° C. of 1 to 500 MPa and a tensile break strength of 5 to 50 MPa.

Abstract: A method for manufacturing a thin substrate uses a temporary adhesive film for substrate processing for temporarily adhesion of a substrate to a support on a surface of the substrate opposite to a surface to be processed, the temporary adhesive film for substrate processing containing a siloxane bond-containing polymer having a weight average molecular weight of 3,000 to 500,000 in an amount of 10 parts by mass or more and 100 parts by mass or less relative to 100 parts by mass; and includes: (a) laminating the temporary adhesive film for substrate processing onto the support and/or the surface of the substrate opposite to the surface to be processed; (b) bonding thereof under reduced pressure; (c) processing the substrate by grinding or polishing; (d) treating the substrate with acid or base; (e) other processing; (f) separating the processed substrate from the support; and (g) cleaning the substrate.

Abstract: A novel polymer containing silphenylene and polyether structures in the backbone is used to formulate a photosensitive composition having improved reliability.

Abstract: A photosensitive resin composition comprising (A) a silphenylene and polyether structure—containing polymer and (B) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which has improved substrate adhesion, a pattern forming ability, crack resistance, and reliability as protective film.

Abstract: A wafer laminate has an adhesive layer (3) sandwiched between a transparent substrate (1) and a water (2), with a circuit-forming surface of the wafer facing the adhesive layer. The adhesive layer (3) includes a first cured resin layer (3a) disposed adjacent the substrate and having light-shielding properties and a second cured resin layer (3b) disposed adjacent the wafer and comprising a cured product of a thermosetting resin composition.

Abstract: The present invention provides a silicone skeleton-containing polymer including a silicone skeleton shown by the following formula (1) and having a weight average molecular weight of 3,000 to 500,000. This can provide a silicone skeleton-containing polymer that can easily form a fine pattern with a large film thickness, and can form a cured material layer (cured film) that is excellent in various film properties such as crack resistance and adhesion properties to a substrate, electronic parts, and a semiconductor device, particularly a base material used for a circuit board, and has high reliability as a film to protect electric and electronic parts and a film for bonding substrates; and a photo-curable resin composition that contains the polymer, a photo-curable dry film thereof, a laminate using these materials, and a patterning process.

Abstract: A circuit substrate processing laminate has, sequentially in the order of a support, a temporary adhesive material layer releasably laminated on the support, and a circuit substrate. The circuit substrate has a front surface on which a circuit is formed and a back surface to be processed. The temporary adhesive material layer is releasably laminated to the front surface, and is composed of a thermosetting siloxane polymer layer laminated on the support, after cured, has a first peeling force of 10 to 500 mN/25 mm as measured by a 180° peel test. The first peeling force is required for peeling the polymer layer from an interface with the support. The polymer layer, after cured, has a second peeling force of 50 to 1000 mN/25 mm as measured by the 180° peel test. The second peeling force is required for peeling the polymer layer from an interface with the circuit substrate.

Abstract: A laminate is provided comprising a support, a resin layer, a metal layer, an insulating layer, and a redistribution layer. The resin layer comprises a photo-decomposable resin having light-shielding properties and has a transmittance of up to 20% with respect to light of wavelength 355 nm. The laminate is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.

Abstract: A semiconductor apparatus includes a semiconductor device, on-semiconductor-device metal pad and metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second layer. The metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second layer, penetrates the second layer from its upper surface, and is electrically connected to the through electrode at an lower surface of the second layer, and an under-semiconductor-device metal interconnect is between the first layer and the semiconductor device, and the under-semiconductor-device metal interconnect is electrically connected to the metal interconnect at the lower surface of the second layer.

Abstract: The present invention provides a resin composition including: (A) a silicone resin containing a constitutional unit shown by the following composition formula (1) and having a weight average molecular weight of 3,000 to 500,000, (B) an epoxy resin-curing agent; and (C) a filler. This can provide a resin composition and a resin film that can mold a wafer in a lump, has good molding properties particularly to a thin-film wafer having a large diameter, gives low-warping properties, as well as good wafer protection performance, good adhesion properties, high reliability, and good heat resistance after molding, can perform a molding process favorably, and can be used for wafer level packaging favorably. The present invention also provides a method for producing the resin film, a semiconductor device molded with the resin film, and a method for producing the semiconductor device.

Abstract: A semiconductor device is provided comprising a support, an adhesive resin layer, an insulating layer, a redistribution layer, a chip layer, and a mold resin layer. The adhesive resin layer consists of a resin layer (A) comprising a photo-decomposable resin containing a fused ring in its main chain and a resin layer (B) comprising a non-silicone base thermoplastic resin and having a storage elastic modulus E? of 1-500 MPa at 25° C. and a tensile break strength of 5-50 MPa. The semiconductor device is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.

Abstract: Disclosed herein is a semiconductor device including: a support; a double-layered adhesive resin layer formed on the support, an insulating layer and a redistribution layer formed on the adhesive resin layer; a chip layer, and a mold resin layer, wherein the adhesive resin layer includes a resin layer A containing a resin decomposable by light irradiation and a resin layer B containing a non-silicone-based thermoplastic resin, the resin layer A and the resin layer B being provided in this order from the support side, the resin decomposable by light irradiation is a resin containing a fused ring in its main chain, and the non-silicone-based thermoplastic resin has a glass transition temperature of 200° C. or higher.

Abstract: A temporary adhesive material for a wafer processing, used for temporarily bonding a support and a wafer having a circuit-forming front surface and a back surface to be processed, contains a complex temporary adhesive material layer having a three-layered structure that includes a first temporary adhesive layer composed of a non-silicone thermoplastic resin layer capable of releasably adhering to the front surface of the wafer, a second temporary adhesive layer composed of a thermosetting siloxane polymer layer laminated on the first temporary adhesive layer, and a third temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer laminated on the second temporary adhesive layer and capable of releasably adhering to the support. A wafer processing laminate and temporary adhesive material for a wafer processing facilitate temporary adhesion and separation, have excellent CVD resistance, and can increase productivity of thin wafers, and a method manufactures a thin wafer using the same.

Abstract: A wafer processing laminate comprising a support, a temporary adhesive material layer laminated on the support, and a wafer stacked on the temporary adhesive material layer, the wafer having a front surface on which a circuit is formed and a back surface to be processed, the temporary adhesive material layer comprising a first temporary adhesive layer composed of a thermoplastic resin layer (A) laminated on the front surface of the wafer and a second temporary adhesive layer composed of a thermosetting resin layer (B) laminated on the first temporary adhesive layer, the thermoplastic resin layer (A) being soluble in a cleaning liquid (D) after processing the wafer, the thermosetting resin layer (B) being insoluble in the cleaning liquid (D) after heat curing and capable of absorbing the cleaning liquid (D) such that the cleaning liquid (D) permeates into the layer (B).

Abstract: A temporary adhesive film roll for substrate processing, includes: a roll axis and a composite film-shaped temporary-adhesive material for temporarily bonding a substrate to a support, the composite film-shaped temporary-adhesive material being rolled up around the roll axis; wherein the composite film-shaped temporary-adhesive material includes a first temporary adhesive layer composed of a thermoplastic resin, a second temporary adhesive layer composed of a thermosetting resin, and a third temporary adhesive layer composed of a thermosetting resin which is different from that of the second temporary adhesive layer.

Abstract: A wafer processing laminate including support, temporary adhesive material layer formed on support, and wafer stacked on temporary adhesive material layer, wafer having front surface on which circuit is formed and back surface to be processed, wherein temporary adhesive material layer includes a three-layered complex temporary adhesive material layer that includes first temporary adhesive layer composed of thermoplastic organopolysiloxane polymer layer (A) having thickness of less than 100 nm and releasably laminated to front surface of wafer, second temporary adhesive layer composed of thermosetting siloxane-modified polymer layer (B) releasably laminated to first temporary adhesive layer, and third temporary adhesive layer composed of thermoplastic organopolysiloxane polymer layer (A?) having thickness of less than 100 nm, releasably laminated to second temporary adhesive layer, and releasably laminated to support.

Abstract: A semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second insulating layer, wherein the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from its upper surface and is electrically connected to the through electrode at an lower surface of the second insulating layer. This semiconductor apparatus can be easily placed on a circuit board and stacked, and can reduce its warpage even with dense metal interconnects.

Abstract: Temporary adhesive material for wafer processing, the temporary adhesive material being used for temporarily bonding support to wafer having circuit-forming front surface and back surface to be processed, including complex temporary adhesive material layer that has first temporary adhesive layer composed of thermosetting siloxane polymer layer (A), second temporary adhesive layer composed of thermosetting polymer layer (B), and third temporary adhesive layer composed of thermoplastic resin layer (C), wherein the polymer layer (A) is cured layer of composition containing (A-1) an organopolysiloxane having alkenyl group within its molecule, (A-2) an organopolysiloxane having R103SiO0.5 unit and SiO2 unit, (A-3) organohydrogenpolysiloxane having two or more Si—H groups per molecule, and (A-4) platinum-based catalyst.