Abstract: A method for temporarily bonding a wafer to a support via a temporary bonding arrangement is provided. The arrangement is a composite temporary adhesive layer consisting of a non-silicone thermoplastic resin layer (A) which is releasably bonded to the wafer, a thermosetting siloxane polymer layer (B) laid thereon, and a thermosetting siloxane-modified polymer layer (C) releasably bonded to the support. The method comprises the steps of providing a wafer laminate having a thermosetting silicone composition layer (B?) formed on the resin layer (A) which has been formed on the wafer, providing a support laminate having a siloxane-containing composition layer (C?) formed on the support, joining and heating layer (B?) and layer (C?) in vacuum for bonding and curing the layers together.

Abstract: A wafer processing laminate including support, temporary adhesive material layer formed on support, and wafer stacked on temporary adhesive material layer, wafer having front surface on which circuit is formed and back surface to be processed, wherein temporary adhesive material layer includes a three-layered complex temporary adhesive material layer that includes first temporary adhesive layer composed of thermoplastic organopolysiloxane polymer layer (A) having thickness of less than 100 nm and releasably laminated to front surface of wafer, second temporary adhesive layer composed of thermosetting siloxane-modified polymer layer (B) releasably laminated to first temporary adhesive layer, and third temporary adhesive layer composed of thermoplastic organopolysiloxane polymer layer (A?) having thickness of less than 100 nm, releasably laminated to second temporary adhesive layer, and releasably laminated to support.

Abstract: The present invention is a temporary adhesion method for temporarily bonding a support and a wafer via a temporary adhesive material, including attaching the wafer to the support via the temporary adhesive material including a complex temporary adhesive material layer that consists of a thermoplastic resin layer (A) exhibiting a storage modulus E? of 1 to 500 MPa and a tensile rupture strength of 5 to 50 MPa at 25° C. and a thermosetting polymer layer (B) exhibiting a storage modulus E? of 1 to 1000 MPa and a tensile rupture strength of 1 to 50 MPa at 25° C.

Abstract: A semiconductor apparatus includes a semiconductor device, on-semiconductor-device metal pad and metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second layer. The metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second layer, penetrates the second layer from its upper surface, and is electrically connected to the through electrode at an lower surface of the second layer, and an under-semiconductor-device metal interconnect is between the first layer and the semiconductor device, and the under-semiconductor-device metal interconnect is electrically connected to the metal interconnect at the lower surface of the second layer.

Abstract: A semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second insulating layer, wherein the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from its upper surface and is electrically connected to the through electrode at an lower surface of the second insulating layer. This semiconductor apparatus can be easily placed on a circuit board and stacked, and can reduce its warpage even with dense metal interconnects.

Abstract: A temporary adhesive material for a wafer processing, used for temporarily bonding a support and a wafer having a circuit-forming front surface and a back surface to be processed, contains a complex temporary adhesive material layer having a three-layered structure that includes a first temporary adhesive layer composed of a non-silicone thermoplastic resin layer capable of releasably adhering to the front surface of the wafer, a second temporary adhesive layer composed of a thermosetting siloxane polymer layer laminated on the first temporary adhesive layer, and a third temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer laminated on the second temporary adhesive layer and capable of releasably adhering to the support. A wafer processing laminate and temporary adhesive material for a wafer processing facilitate temporary adhesion and separation, have excellent CVD resistance, and can increase productivity of thin wafers, and a method manufactures a thin wafer using the same.

Abstract: A bonding arrangement comprising a silicone-base adhesive composition is suited for temporarily bonding a wafer to a support for wafer processing. The bonding arrangement includes a first temporary bond layer of non-silicone thermoplastic resin, and a second temporary bond layer of thermosetting silicone polymer and/or a third temporary bond layer of thermosetting siloxane-modified polymer. The second and/or third bond layer contains an antistatic agent.

Abstract: A temporary adhesive material for a wafer includes a first temporary adhesive layer of a silicone-containing polymer layer containing a photo base generator and a second temporary adhesive layer of a silicone-containing polymer layer which is laminated on the first temporary adhesive layer, does not contain the photo base generator, and is different from the polymer layer. Thereby, there can be formed a temporary adhesive layer having high thickness uniformity, even on a wafer having a step. Because of the thickness uniformity, a thin wafer having a uniform thickness of 50 ?m or less can be easily obtained. When a thin wafer is produced and then delaminated from a support, the wafer can be delaminated from the support by exposure at a low exposure dose without stress. Therefore, a brittle thin wafer can be easily handled without causing damage, and a thin wafer can be easily produced.

Abstract: A temporary bonding arrangement for wafer processing is provided comprising a first temporary bond layer (A) of thermoplastic resin, a second temporary bond layer (B) of thermosetting siloxane polymer, and a third temporary bond layer (C) of thermosetting polymer. Layer (B) is cured with a curing catalyst contained in layer (A) which is laid contiguous to layer (B). An adhesive layer of uniform thickness is formed without insufficient step coverage and other failures.

Abstract: A wafer processing laminate including a support, a temporary adhesive material layer formed on the support, and a wafer, having a circuit-forming front surface and back surface to be processed, laminated on the temporary adhesive material layer, in which the temporary adhesive material layer is composed of a complex temporary adhesive material layer having a three-layered structure including a first temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer releasably adhering to the front surface of the wafer, second temporary adhesive layer composed of thermosetting siloxane-modified polymer layer releasably laminated on the first temporary adhesive layer, and third temporary adhesive layer composed of thermosetting siloxane polymer layer releasably laminated on the second temporary adhesive layer and releasably adhering to the support.

Abstract: A wafer processing laminate, a wafer processing member, a temporary adhering material for processing wafer, and a method for manufacturing a thin wafer using the same. The wafer processing laminate includes a support, a temporary adhesive material layer formed thereon and a wafer laminated on the temporary adhesive material layer, where the wafer has a circuit-forming front surface and a back surface to be processed. The temporary adhesive material layer includes a first temporary adhesive layer of a thermoplastic organopolysiloxane polymer layer (A) releasably adhered on a surface of the wafer, a second temporary adhesive layer of a radiation curable polymer layer (B) laminated on the first temporary adhesive layer, and a third temporary adhesive layer of a thermoplastic organopolysiloxane polymer layer (A?) laminated on the second temporary adhesive layer and releasably adhered to the support.

Abstract: The purpose of the present invention is to provide an adhesive composition using a silicone polymer compound, which does not require exposure, baking and development processes for the production, thereby making the production cost low and making the productivity high, which has good characteristics such as good adhesiveness, good hermetic sealing properties after thermal curing and low moisture absorption that are required for adhesives, which provides a cured film having high reliabilities such as high heat resistance and high light resistance, and which is capable of suppressing warping of a bonded substrate after back grinding that is necessary in the three-dimensional mounting production.

Abstract: A temporary bonding adhesive composition includes a first compound including a thermosetting polyorganosiloxane and a second compound including a thermoplastic polyorganosiloxane.

Abstract: Temporary adhesive material for wafer processing, the temporary adhesive material being used for temporarily bonding support to wafer having circuit-forming front surface and back surface to be processed, including complex temporary adhesive material layer that has first temporary adhesive layer composed of thermosetting siloxane polymer layer (A), second temporary adhesive layer composed of thermosetting polymer layer (B), and third temporary adhesive layer composed of thermoplastic resin layer (C), wherein the polymer layer (A) is cured layer of composition containing (A-1) an organopolysiloxane having alkenyl group within its molecule, (A-2) an organopolysiloxane having R103SiO0.5 unit and SiO2 unit, (A-3) organohydrogenpolysiloxane having two or more Si—H groups per molecule, and (A-4) platinum-based catalyst.

Abstract: A method for temporarily bonding a wafer to a support via a temporary bonding arrangement is provided. The arrangement is a composite temporary adhesive layer consisting of a non-silicone thermoplastic resin layer (A) which is releasably bonded to the wafer, a thermosetting siloxane polymer layer (B) laid thereon, and a thermosetting siloxane-modified polymer layer (C) releasably bonded to the support. The method comprises the steps of providing a wafer laminate having a thermosetting silicone composition layer (B?) formed on the resin layer (A) which has been formed on the wafer, providing a support laminate having a siloxane-containing composition layer (C?) formed on the support, joining and heating layer (B?) and layer (C?) in vacuum for bonding and curing the layers together.

Abstract: A wafer processing laminate is provided comprising a support, a temporary adhesive layer on the support, and a wafer laid on the temporary adhesive layer. The temporary adhesive layer has a trilayer structure consisting of a first bond layer (A) of thermoplastic organosiloxane polymer which is releasably bonded to the circuit-forming front surface of the wafer, a second bond layer (B) of thermosetting modified siloxane polymer which is laid on the first bond layer, and a third bond layer (A?) of thermoplastic organosiloxane polymer which is laid on the second bond layer and releasably bonded to the support.

Abstract: The invention is adhesive material for a wafer processing used for temporarily bonding a supporting substrate to wafer having a front surface includes circuit formed thereon and a back surface to be processed, including first temporary adhesive layer composed of a layer of a silicone-modified styrene base thermoplastic elastomer, and second temporary adhesive layer composed of a thermosetting polymer layer on first temporary adhesive layer, wherein layer is capable of releasably adhering to front surface of wafer, and layer is capable of releasably adhering to the supporting substrate. Thereby, it provides a temporary adhesive material for wafer processing, wafer processing lamination, and method for manufacturing thin wafer using same, which facilitates temporary adhesion between supporting substrate and wafer having a circuit, is highly compatible with steps of forming TSV and forming wiring on back surface of wafer, allows easy delamination, and is capable of increasing productivity of thin wafers.

Abstract: The present invention provided is the temporary adhesive for wafer processing which temporarily bonds a wafer having a circuit face on the front surface and a processing face on the back surface to a support, and includes a first temporary adhesive layer which is a layer (A) of a thermoplastic resin modified organopolysiloxane obtained by partial dehydration condensation of an organopolysiloxane resin containing a R21R22R23SiO1/2, and a SiO4/2 unit in a molar ratio of R21R22R23SiO1/2 unit/SiO4/2 unit of 0.6 to 1.7 and an organopolysiloxane represented by the following general formula (1), and a second temporary adhesive layer which is a thermosetting modified siloxane polymer layer (B) which is laminated on the first temporary adhesive layer and is releasably bonded to the support.

Abstract: A wafer processing laminate including a support, a temporary adhesive material layer formed on the support, and a wafer laminated on the temporary adhesive material layer, the wafer having a circuit-forming front surface and back surface to be processed, wherein the temporary adhesive material layer includes a complex temporary adhesive material layer having two-layered structure including a first temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A) having a film thickness of less than 100 nm and a second temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer (B), the first temporary adhesive layer being releasably laminated to the front surface of the wafer, the second temporary adhesive layer being releasably laminated to the first temporary adhesive layer and the support. A temporary adhesive material for a wafer processing which withstand a thermal process at high temperature exceeding 300° C.

Abstract: A wafer processing laminate, a wafer processing member, a temporary adhering material for processing a wafer, and a method for manufacturing a thin wafer, which facilitates to establish a temporary adhering the wafer and the support, enables to form a layer of uniform thickness on a heavily stepped substrate, and is compatible with the TSV formation and wafer back surface interconnect forming steps, and the wafer processing laminate includes a support, a temporary adhesive material layer formed thereon and a wafer laminated on the temporary adhesive material layer, where the wafer has a circuit-forming front surface and a back surface to be processed, wherein the temporary adhesive material layer includes a three-layered structure composite temporary adhesive material layer.