Abstract: According to one embodiment, a sensor includes a supporter, a film portion, a first element, and a first magnetic portion. The supporter includes a first support portion and a second support portion. The film portion includes a first partial region supported by the first support portion. The first element is provided at the first partial region. The first element includes a first electrode region, a first opposing electrode region, and a first magnetic layer provided between the first electrode region and the first opposing electrode region. A direction from the second support portion toward the first magnetic portion is aligned with a first direction. The first direction is from the first opposing electrode region toward the first electrode region. At least a portion of the first magnetic portion overlaps at least a portion of the first element in a direction crossing the first direction.

Abstract: According to one embodiment, a sensor includes a structure body, an element portion, and a power line. The structure body includes a supporter and a film portion. The film portion is supported by the supporter and includes an end portion. The end portion is aligned with a first direction and supported by the supporter. The element portion includes a first element provided at the film portion. The first element includes a first magnetic layer, a first opposing magnetic layer provided between the first magnetic layer and the film portion, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A second direction from the first opposing magnetic layer toward the first magnetic layer crosses the first direction. The power line is electrically insulated from the element portion. The power line includes a portion aligned with the first direction.

Abstract: According to one embodiment, a sensor includes a deformable film portion, and a first sensing element provided at the film portion. The first sensing element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and second magnetic layers. The first intermediate layer is nonmagnetic. The first magnetic layer includes a first film including Fe and Co, a second film including Fe and Co, a third film, and a fourth film. The third film includes at least one selected from the group consisting of Cu, Au, Ru, Ag, Pt, Pd, Ir, Rh, Re, and Os and is provided between the first and second films. The fourth film includes at least one selected from the group consisting of Mg, Ca, Sc, Ti, Sr, Y, Zr, Nb, Mo, Ba, La, Hf, Ta, and W and is provided between the third and second films.

Abstract: According to one embodiment, a sensor includes a film portion, one or more detectors fixed to the film portion, and a processor. The detector includes first and second detecting elements. The first detecting element includes a first magnetic layer. The second detecting element includes a second magnetic layer. A first change rate of a first signal is higher than a second change rate of the first signal. The first signal corresponds to a first electrical resistance of the first detecting element. A change rate of a second signal with respect to the change of the magnitude of the strain is higher than the second change rate. The second signal corresponds to a second electrical resistance of the second detecting element. The processor is configured to perform at least a first operation of outputting a second value. The second value is based on the second signal and a first value.

Abstract: A sensor includes a structure body including a deforming portion, and a first sensing element provided at the deforming portion. The first sensing element includes first to fourth magnetic layers and a first intermediate layer. The first magnetic layer is provided between the second and third magnetic layers. The fourth magnetic layer is provided between the first and third magnetic layers. The first intermediate layer is provided between the second and first magnetic layers. The third magnetic layer includes at least one of a first material or a second material. The first material includes at least one selected from the group consisting of Ir—Mn, Pt—Mn, Pd—Pt—Mn, and Ru—Rh—Mn. The second material includes at least one of CoPt, (CoxPt100-x)100-yCry, or FePt. A crystallinity of at least a portion of the fourth magnetic layer is higher than a crystallinity of the first magnetic layer.

Abstract: According to one embodiment, a sensor includes a supporter, a first film portion, a first sensing element, and a first magnetic portion. The first film portion is supported by the supporter, is deformable, and includes a first fixed end extending along a first fixed end direction. A first sensing element is fixed to the first film portion, and includes a first magnetic layer, a first opposing magnetic layer provided between the first magnetic layer and the first film portion, and a first intermediate layer provided between the first magnetic layer and the first opposing magnetic layer. A direction from the first opposing magnetic layer toward the first magnetic layer is aligned with a first element direction. The first magnetic portion includes a first end portion extending along a first end portion direction tilted with respect to the first fixed end direction, and overlaps a portion of the supporter.

Abstract: According to one embodiment, a sensor includes a sensing element portion and a first magnetic portion. The sensing element portion includes a supporter, a deformable film portion supported by the supporter, and a first element including a magnetic layer and being provided at the film portion. The first magnetic portion is separated from the sensing element portion. The first magnetic portion includes a plurality of first holes. A width of one of the plurality of first holes along a second direction is narrower than a length of the sensing element portion along the second direction and wider than a length of the first element along the second direction. The second direction crosses a first direction from the film portion toward the first element.

Abstract: According to an embodiment, a magnetic element includes a first layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second layer, and a third magnetic layer. The first layer includes ruthenium. The second magnetic layer is provided between the first layer and the first magnetic layer. The first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second layer includes tantalum. The second layer contacts the first layer and is provided between the first layer and the second magnetic layer. A lattice plane spacing of the second layer in a first direction is not less than 0.23 nm and not more than 0.25 nm. The first direction is from the first layer toward the first magnetic layer. The third magnetic layer includes manganese. The third magnetic layer is provided between the second layer and the second magnetic layer.

Abstract: According to one embodiment, a sensor includes a structure body, an element portion, and a power line. The structure body includes a supporter and a film portion. The film portion is supported by the supporter and includes an end portion. The end portion is aligned with a first direction and supported by the supporter. The element portion includes a first element provided at the film portion. The first element includes a first magnetic layer, a first opposing magnetic layer provided between the first magnetic layer and the film portion, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A second direction from the first opposing magnetic layer toward the first magnetic layer crosses the first direction. The power line is electrically insulated from the element portion. The power line includes a portion aligned with the first direction.

Abstract: According to one embodiment, a sensor includes a structure body including a deforming portion, and a first sensing element provided at the deforming portion. The first sensing element includes first to fourth magnetic layers and a first intermediate layer. The first magnetic layer is provided between the second and third magnetic layers. The fourth magnetic layer is provided between the first and third magnetic layers. The first intermediate layer is provided between the second and first magnetic layers. The third magnetic layer includes at least one of a first material or a second material. The first material includes at least one selected from the group consisting of Ir—Mn, Pt—Mn, Pd—Pt—Mn, and Ru—Rh—Mn. The second material includes at least one of CoPt, (CoxPt100-x)100-yCry, or FePt. A crystallinity of at least a portion of the fourth magnetic layer is higher than a crystallinity of the first magnetic layer.

Abstract: According to one embodiment, a sensor includes a film portion, one or more detectors fixed to the film portion, and a processor. The detector includes first and second detecting elements. The first detecting element includes a first magnetic layer. The second detecting element includes a second magnetic layer. A first change rate of a first signal is higher than a second change rate of the first signal. The first signal corresponds to a first electrical resistance of the first detecting element. A change rate of a second signal with respect to the change of the magnitude of the strain is higher than the second change rate. The second signal corresponds to a second electrical resistance of the second detecting element. The processor is configured to perform at least a first operation of outputting a second value. The second value is based on the second signal and a first value.

Abstract: According to one embodiment, a sensor includes a film portion, one or more detectors fixed to the film portion, and a processor. The detector includes first and second detecting elements. The first detecting element includes a first magnetic layer. The second detecting element includes a second magnetic layer. A first change rate of a first signal is higher than a second change rate of the first signal. The first signal corresponds to a first electrical resistance of the first detecting element. A change rate of a second signal with respect to the change of the magnitude of the strain is higher than the second change rate. The second signal corresponds to a second electrical resistance of the second detecting element. The processor is configured to perform at least a first operation of outputting a second value. The second value is based on the second signal and a first value.

Abstract: According to one embodiment, a sensor includes a supporter, a film portion, a first element, and a first magnetic portion. The supporter includes a first support portion and a second support portion. The film portion includes a first partial region supported by the first support portion. The first element is provided at the first partial region. The first element includes a first electrode region, a first opposing electrode region, and a first magnetic layer provided between the first electrode region and the first opposing electrode region. A direction from the second support portion toward the first magnetic portion is aligned with a first direction. The first direction is from the first opposing electrode region toward the first electrode region. At least a portion of the first magnetic portion overlaps at least a portion of the first element in a direction crossing the first direction.

Abstract: According to one embodiment, a sensor includes a first film, a first sensor portion, a driving portion, and a processor. The first sensor portion is provided at the first film. The first sensor portion includes a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first film and the first magnetic layer. The first intermediate layer is provided between the first magnetic layer and the second magnetic layer. The driving portion causes the first film to deform at a first frequency. The processor outputs a third signal based on a first signal and a second signal. The first signal relates to the first frequency. The second signal is output from the first sensor portion.

Abstract: According to one embodiment, a sensor includes a deformable film portion, a first sensing element and a second sensing element. The first sensing element is fixed to the film portion, and includes a first magnetic layer of a first material, a first opposing magnetic layer, and a first intermediate layer. The first intermediate layer is provided between the first magnetic layer and the first opposing magnetic layer. The second sensing element is fixed to the film portion, and includes a second magnetic layer of a second material, a second opposing magnetic layer, and a second intermediate layer. The second material is different from the first material. The second intermediate layer is provided between the second magnetic layer and the second opposing magnetic layer.

Abstract: According to one embodiment, a microphone package includes: a pressure sensing element including a film and a device; and a cover. The film generates strain in response to pressure. The device includes: a first electrode; a second electrode; and a first magnetic layer. The first magnetic layer is provided between the first electrode and the second electrode and has a first magnetization. The cover includes: an upper portion; and a side portion. The side portion is magnetic and provided depending on the first magnetization and the second magnetization.

Abstract: According to one embodiment, a sensor includes a first support portion, a first movable portion, a first piezoelectric element, and a first magnetic element. The first movable portion extends in a first extension direction and is connected to the first support portion. The first piezoelectric element is fixed to the first movable portion. The first piezoelectric element includes a first electrode, a second electrode provided between the first electrode and the first movable portion, and a first piezoelectric layer provided between the first electrode and the second electrode. The first magnetic element is fixed to the first movable portion. The first magnetic element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer.

Abstract: According to one embodiment, a sensor includes a sensing element portion and a first magnetic portion. The sensing element portion includes a supporter, a deformable film portion supported by the supporter, and a first element including a magnetic layer and being provided at the film portion. The first magnetic portion is separated from the sensing element portion. The first magnetic portion includes a plurality of first holes. A width of one of the plurality of first holes along a second direction is narrower than a length of the sensing element portion along the second direction and wider than a length of the first element along the second direction. The second direction crosses a first direction from the film portion toward the first element.

Abstract: According to one embodiment, a strain sensing element is provided on a film unit configured to be deformed. The strain sensing element includes a functional layer, a first magnetic layer, a second magnetic layer, and a spacer layer. The functional layer includes at least one of an oxide and a nitride. The second magnetic layer is provided between the functional layer and the first magnetic layer. A magnetization of the second magnetic layer is variable in accordance with a deformation of the film unit. The spacer layer is provided between the first magnetic layer and the second magnetic layer. At least a part of the second magnetic layer is amorphous and includes boron.

Abstract: According to one embodiment, a sensor includes a deformable film portion, and a first sensing element provided at the film portion. The first sensing element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and second magnetic layers. The first intermediate layer is nonmagnetic. The first magnetic layer includes a first film including Fe and Co, a second film including Fe and Co, a third film, and a fourth film. The third film includes at least one selected from the group consisting of Cu, Au, Ru, Ag, Pt, Pd, Ir, Rh, Re, and Os and is provided between the first and second films. The fourth film includes at least one selected from the group consisting of Mg, Ca, Sc, Ti, Sr, Y, Zr, Nb, Mo, Ba, La, Hf, Ta, and W and is provided between the third and second films.