Abstract: To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles. (In the general formula (1), X represents —SH, —COOH, —NH2, —PO(OH)2, or —SO2(OH), A1 represents —S, —COO, —PO(OH)O, or —SO2(O), and n is an integer of 1 to 3. B1 represents Li, Na, or K.

Abstract: A surface emitting device includes a semiconductor layer including a first crystal material, a reflection layer formed on the semiconductor layer, including a second crystal material of which a lattice constant or a crystal structure is different from the first crystal material, and having a mesa shape, and a light constriction region that is formed in a portion of the reflection layer and controls optical confinement.

Abstract: A surface emitting device according to an embodiment of the present disclosure includes: a first reflective layer; a first semiconductor layer of a first conductive type, the first semiconductor layer being stacked on the first reflective layer; an active layer stacked on the first semiconductor layer; a second semiconductor layer of a second conductive type that is a conductive type opposite to the first conductive type, the second semiconductor layer being stacked on the active layer; a tunnel junction layer stacked on the second semiconductor layer; a third semiconductor layer of the first conductive type, the third semiconductor layer being stacked on the tunnel junction layer; a second reflective layer stacked on the third semiconductor layer, at a side opposite to a side of the first reflective layer; a dielectric layer formed, through non-selective oxidation, between the second semiconductor layer and the third semiconductor layer or between the third semiconductor layer and the second reflective layer

Abstract: A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer including first semiconductor nanoparticles; and a buffer layer including second semiconductor nanoparticles. A p-n junction surface is formed at an interface between the photoelectric conversion layer and the buffer layer. A product of a carrier concentration and a film thickness of the buffer layer is larger than a product of a carrier concentration of the photoelectric conversion layer and a diffusion length of a minority carrier, and a thickness of a depletion region formed in the photoelectric conversion layer is maximized.

Abstract: The present technology provides a surface emitting laser capable of performing current confinement at least in a tunnel junction layer while suppressing the characteristic change of the tunnel junction layer. The surface emitting laser according to the present technology includes: first and second reflectors; and a resonator disposed between the first and second reflectors, the resonator including an active layer and a tunnel junction layer, in which, in the resonator, a peripheral portion has higher resistance than a central portion at least in an entire region in a thickness direction of the tunnel junction layer. According to the surface emitting laser according to the present technology, it is possible to provide a surface emitting laser capable of performing current confinement at least in a tunnel junction layer while suppressing the characteristic change of the tunnel junction layer.

Abstract: The present technology provides a surface emitting laser capable of improving flatness of a surface of a buried layer while reducing diffraction loss of light in the buried layer. The surface emitting laser according to present technology includes a first structure including a first multilayer film reflector, a second structure including a second multilayer film reflector, and a resonator disposed between the first and second structures, in which the resonator includes an active layer, a tunnel junction layer disposed between the first structure and the active layer and having a mesa and an adjacent region adjacent to the mesa, and a buried layer that buries a periphery of the mesa and a periphery of the adjacent region, and an interval between the mesa and the adjacent region is less than or equal to 30 ?m.

Abstract: A photoelectric conversion element includes a first electrode including a plurality of electrodes independent from each other, a second electrode disposed to be opposed to the first electrode, an n-type photoelectric conversion layer including a semiconductor nanoparticle, and a semiconductor layer including an oxide semiconductor material. The semiconductor layer is provided between the first electrode and the n-type photoelectric conversion layer. The n-type photoelectric conversion layer is provided between the first electrode and the second electrode. A carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer.

Abstract: To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles. (In the general formula (1), X represents —SH, —COOH, —NH2, —PO(OH)2, or —SO2(OH), A1 represents —S, —COO, —PO(OH)O, or —SO2(O), and n is an integer of 1 to 3. B1 represents Li, Na, or K.

Abstract: To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles. (In the general formula (1), X represents —SH, —COOH, —NH2, —PO(OH)2, or —SO2(OH), A1 represents —S, —COO, —PO(OH)O, or —SO2(O), and n is an integer of 1 to 3. B1 represents Li, Na, or K.

Abstract: An imaging device including a photoelectric conversion layer including a semiconductor nanoparticle (100) including a particle body (101) and a monoatomic ligand (102). The particle body (101) includes a semiconductor core (103) including at least two or more elements selected from a Group I element, a Group III element, a Group V element, and a Group VI element. The monoatomic ligand (102) is bonded to a surface of the particle body (101).

Abstract: A manufacturing method of a quantum dot ensemble of the present disclosure is a manufacturing method of a quantum dot ensemble including a plurality of core-shell quantum dots 10A that each includes a core 10B including a compound semiconductor, and a shell 10C including a compound semiconductor and covering the core, and a ligand 10D coordinated to the shell, and the manufacturing method includes mixing a core material, a shell material, and the ligand in a solvent and thereafter performing heating to thereby form the core-shell quantum dots, coordinate the ligand to the shell, and cleave the ligand.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes independent from each other; a second electrode disposed to be opposed to the first electrode; an n-type photoelectric conversion layer including a semiconductor nanoparticle, the n-type photoelectric conversion layer being provided between the first electrode and the second electrode; and a semiconductor layer including an oxide semiconductor material, the semiconductor layer being provided between the first electrode and the n-type photoelectric conversion layer.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes independent from each other; a second electrode disposed to be opposed to the first electrode; a photoelectric conversion layer including a quantum dot; and a semiconductor layer including an oxide semiconductor material. The photoelectric conversion layer is provided between the first electrode and the second electrode. The semiconductor layer is provided between the first electrode and the photoelectric conversion layer. A conduction band of the photoelectric conversion layer has an energy level equal to or higher than an energy level of a conduction band of the semiconductor layer.

Abstract: It is an object of the present technology to provide a semiconductor film capable of further improving photoelectric conversion efficiency. There is provided a semiconductor film containing semiconductor nanoparticles and sulfur, the semiconductor nanoparticles having a core-shell structure, the core portion containing a compound represented by the following general formula (1), the shell portion containing ZnS, the sulfur coordinating to the semiconductor nanoparticles. (Chem. 1) Cuy1Inz1A1(y1+3z1)/2 ??(1) (In the general formula (1), y1 satisfies a relationship of 0<y1?20, z1 satisfies a relationship of 0<z1?20, and A1 represents S, Se, or Te.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes independent from each other; a second electrode disposed to be opposed to the first electrode; an n-type photoelectric conversion layer including a semiconductor nanoparticle, the n-type photoelectric conversion layer being provided between the first electrode and the second electrode; and a semiconductor layer including an oxide semiconductor material, the semiconductor layer being provided between the first electrode and the n-type photoelectric conversion layer.

Abstract: A photoelectric conversion device of an embodiment of the technology includes: a first electrode and a second electrode facing each other; a photoelectric conversion layer provided between the first electrode and the second electrode; and a buffer layer provided between the first electrode and the photoelectric conversion layer, and having an interface, to which an organic molecule or a halogen element is coordinated, with the photoelectric conversion layer.

Abstract: A semiconductor nanoparticle dispersion is provided. The semiconductor nanoparticle including a plurality of semiconductor nanoparticles having a radius equal to or larger than an exciton Bohr radius; and a solvent dispersed with the plurality of semiconductor nanoparticles.

Abstract: To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles. (In the general formula (1), X represents —SH, —COOH, —NH2, —PO(OH)2, or —SO2(OH), A1 represents —S, —COO, —PO(OH)O, or —SO2(O), and n is an integer of 1 to 3. B1 represents Li, Na, or K.

Abstract: A dispersion material includes: a plurality of semiconductor nanoparticles; and an adsorption molecule configured to selectively absorb light having a predetermined wavelength and adsorbed to each of the plurality of semiconductor nanoparticles, the adsorption molecule having a plane aligned to be non-parallel to a direction from a center portion of each of the plurality of semiconductor nanoparticles toward an adsorption portion of each of the plurality of semiconductor nanoparticles.

Abstract: A semiconductor nanoparticle dispersion is provided. The semiconductor nanoparticle including a plurality of semiconductor nanoparticles having a radius equal to or larger than an exciton Bohr radius; and a solvent dispersed with the plurality of semiconductor nanoparticles.