Abstract: A vapor growth apparatus including: a reaction chamber configured to lod a wafer; a gas supply mechanism which supplies process gas into the reaction chamber; a support unit for placing the wafer; a heater for heating the wafer from below; a rotation control unit for rotating the wafer; a gas exhaust mechanism including an exhaust port which exhausts gas from the reaction chamber; a reflector provided below the heater for reflecting heat from the heater onto a rear face of the wafer; and a vertical drive unit for vertically moving the reflector.

Abstract: An object of the present invention is to provide a coating apparatus in which the substrate can be reliably rotated at high speed. Another object of the invention is to provide a coating method of forming a coating on a substrate while reliably rotating it at high speed. A coating apparatus includes a susceptor for supporting a silicon wafer, and a rotating portion for rotating the susceptor. The rotating portion is covered on top with the susceptor to form a P2 region. The contact surface of the susceptor with the silicon wafer has a plurality of holes therein. The silicon wafer is attached to the susceptor by evacuating gas from the P2 region.

Abstract: A plurality of wafers are loaded on a susceptor installed in a reaction chamber, and the wafers are heated, and process gas is fed from a plurality of stages of openings formed in a gas feed nozzle installed so as to pass through the center of the susceptor, the process gas is fed obliquely downward from the uppermost openings, and the process gas feeding directions are changed to the reaction chamber relatively. The thickness of deposits on the wall of the reaction chamber is suppressed, the maintenance cycle of film forming equipment is extended, and the throughput can be improved.

Abstract: A susceptor is arranged in a reaction chamber, and an induction heating coil is arranged at a lower side of the susceptor. A ceiling of a bell jar is provided with an observation port, and an infrared radiation thermometer is arranged outside the observation port. A control unit controls the turning angle of the infrared radiation thermometer with a stepping motor, and detects the temperature of the susceptor at predetermined positions in radial direction. The control unit adjusts the heights of the induction heating coil at support positions, and uniforms the temperature distribution within the surface of the susceptor.

Abstract: A susceptor is arranged in a reaction chamber, and an induction heating coil is arranged at a lower side of the susceptor. A ceiling of a bell jar is provided with an observation port, and an infrared radiation thermometer is arranged outside the observation port. A control unit controls the turning angle of the infrared radiation thermometer with a stepping motor, and detects the temperature of the susceptor at predetermined positions in radial direction. The control unit adjusts the heights of the induction heating coil at support positions, and uniforms the temperature distribution within the surface of the susceptor.