Patents by Inventor Michio Sato

Michio Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210010051
    Abstract: The present invention provides a method and probe for determining colibactin and a colibactin-producing bacterium. According to the present invention, there is provided a fluorescent probe for detecting myristoyl asparagine using, for example, a tissue sample and a fecal sample and detecting enzyme activity of ClbP.
    Type: Application
    Filed: August 27, 2018
    Publication date: January 14, 2021
    Applicant: SHIZUOKA PREFECTURE PUBLIC UNIVERSITY CORPORATION
    Inventors: Kenji WATANABE, Yuta TSUNEMATSU, Michio SATO
  • Publication number: 20200326462
    Abstract: An object is to provide an optical element that is thin and can gather and reflect light in a specific wavelength range in a predetermined direction, and a sensor including the above-described optical element. The optical element includes a cholesteric liquid crystal layer, in which the cholesteric liquid crystal layer has a liquid crystal alignment pattern in which a direction of an optical axis derived from a liquid crystal compound changes while continuously rotating in at least one in-plane direction, and in a case where a length over which the direction of the optical axis rotates by 180° in the in-plane direction in which the direction of the optical axis changes while continuously rotating is set as a single period, the cholesteric liquid crystal layer has in-plane regions having different lengths of the single periods in the liquid crystal alignment pattern.
    Type: Application
    Filed: June 26, 2020
    Publication date: October 15, 2020
    Applicant: FUJIFILM Corporation
    Inventors: Yujiro YANAI, Michio NAGAI, Hiroshi SATO
  • Publication number: 20200311510
    Abstract: According to one embodiment, a semiconductor storage device includes a first loop antenna, a second loop antenna, and a controller. The first loop antenna generates a second magnetic field on the basis of electromagnetic induction according to a first magnetic field. The second loop antenna generates an induced electromotive force on the basis of electromagnetic induction according to the second magnetic field. The controller is operable on the basis of the induced electromotive force generated in the second loop antenna, and performs communication with respect to a first external device generating the first magnetic field, through the second loop antenna.
    Type: Application
    Filed: June 17, 2020
    Publication date: October 1, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Keisuke SATO, Shigeto Endo, Michio Ido, Masaomi Teranishi
  • Patent number: 10726323
    Abstract: According to one embodiment, a semiconductor storage device includes a first loop antenna, a second loop antenna, and a controller. The first loop antenna generates a second magnetic field on the basis of electromagnetic induction according to a first magnetic field. The second loop antenna generates an induced electromotive force on the basis of electromagnetic induction according to the second magnetic field. The controller is operable on the basis of the induced electromotive force generated in the second loop antenna, and performs communication with respect to a first external device generating the first magnetic field, through the second loop antenna.
    Type: Grant
    Filed: February 27, 2019
    Date of Patent: July 28, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Keisuke Sato, Shigeto Endo, Michio Ido, Masaomi Teranishi
  • Publication number: 20200018519
    Abstract: A fluid heater includes: a passage member having a passage formed therein; a heater for heating the passage member; a fixing member for fixing the passage member to a fluid control device; and a connection member connected to the passage member so as to allow fluid to flow into the passage member. The passage has a helical shape.
    Type: Application
    Filed: September 26, 2019
    Publication date: January 16, 2020
    Applicant: FUJIKIN INCORPORATED
    Inventors: Tsuneyuki OKABE, Toshiyuki INADA, Taiji CHIBA, Tatsuhiko SATO, Michio YAMAJI, Tadayuki YAKUSHIJIN
  • Publication number: 20190370625
    Abstract: According to one embodiment, a semiconductor storage device includes a first loop antenna, a second loop antenna, and a controller. The first loop antenna generates a second magnetic field on the basis of electromagnetic induction according to a first magnetic field. The second loop antenna generates an induced electromotive force on the basis of electromagnetic induction according to the second magnetic field. The controller is operable on the basis of the induced electromotive force generated in the second loop antenna, and performs communication with respect to a first external device generating the first magnetic field, through the second loop antenna.
    Type: Application
    Filed: February 27, 2019
    Publication date: December 5, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Keisuke SATO, Shigeto ENDO, Michio IDO, Masaomi TERANISHI
  • Patent number: 10481812
    Abstract: A storage device includes a connection unit to which a first external device is to be connected, a first non-volatile memory in which content items are stored with associated content IDs, a first controller configured to access the content items stored in the first non-volatile memory, an antenna, a second non-volatile memory in which permission information is stored, and a second controller configured to update the permission information based on update information received from a second external device through the antenna. The update information is contained in radio waves transmitted by the second external device and the radio waves cause the antenna to generate power necessary to operate the second non-volatile memory and the second controller. In response to a read command from the first external device, the first controller performs a read of one of the content items based on the updated permission information.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: November 19, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Shigeto Endo, Michio Ido, Keisuke Sato, Masaomi Teranishi
  • Patent number: 10416443
    Abstract: There is provided with a light amount adjusting device. The light adjusting device has a plurality of optical filter elements. The plurality of optical filter elements have different light transmittances. Reflected light colors from the plurality of optical filter elements are substantially equal.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: September 17, 2019
    Assignee: Canon Denshi Kabushiki Kaisha
    Inventors: Yasuhiro Sato, Michio Yanagi
  • Publication number: 20190255475
    Abstract: A honeycomb segment joined body includes a plurality of honeycomb segments; and joining layers for bonding side surfaces of the plurality of honeycomb segments. Each of the joining layers is a cured product of a pasty joining material, and has a standard deviation of joined widths of 0.30 or less. The honeycomb segment joined body is produced by applying pressurization with vibration when joining side surfaces of a plurality of honeycomb segments using a pasty joining material.
    Type: Application
    Filed: February 4, 2019
    Publication date: August 22, 2019
    Applicant: NGK INSULATORS, LTD.
    Inventors: Yutaka ISHII, Yoshihiro SATO, Michio SUZUKI, Yasutaka WATANABE
  • Patent number: 10362261
    Abstract: A method of linking location information to image data in a storage device includes: generating image files, each including image data of a captured image and a time stamp of when the image was captured; determining an first time stamp and a second time stamp within a group of the image files; wirelessly transmitting the first time stamp and the second time stamp to a device having a location logging function and, in response to the wirelessly transmitting, receiving location information corresponding to at least one of a plurality of time stamps including the first time stamp, the second time stamp, and a third time stamp that is between the first time stamp and the second time stamp; and embedding location information in each image file based on the time stamp included therein and the location information received from the device.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: July 23, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Michio Ido, Keisuke Sato, Shigeto Endo, Mai Ando, Shuichi Sakurai, Masaomi Teranishi
  • Patent number: 10326498
    Abstract: An electronic device includes a main body having an aperture, a slot member disposed in the main body, the slot member having a slot exposed by the aperture and in which a memory card of a predetermined size is inserted and a connection terminal electrically connectable to a connection terminal of the memory card, and a coil disposed on a surface of the main body or within the main body so as to overlap with a surface of the slot member that is disposed to face a main surface of the memory card when the memory card is inserted in the slot.
    Type: Grant
    Filed: July 17, 2018
    Date of Patent: June 18, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Shigeto Endo, Michio Ido, Keisuke Sato, Motochika Okano
  • Patent number: 10302934
    Abstract: There is provided with a light amount adjusting device. The light adjusting device has a plurality of optical filter elements. The plurality of optical filter elements have different light transmittances. Reflected light colors from the plurality of optical filter elements are substantially equal.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: May 28, 2019
    Assignee: Canon Denshi Kabushiki Kaisha
    Inventors: Yasuhiro Sato, Michio Yanagi
  • Patent number: 10100413
    Abstract: A base material is composed of a metal or ceramics, and an aluminum nitride coating is formed on an outermost surface thereof. The aluminum nitride coating is formed by impact sintering and contains fine particles having a particle diameter of 1 ?m or less. A thickness of the aluminum nitride coating is no less than 10 ?m. A film density of the aluminum nitride coating is no less than 90% An area ratio of aluminum nitride particles whose particle boundaries are recognizable existing in a 20 ?m×20 ?m unit area of the aluminum nitride coating is 0% to 90% while an area ratio of aluminum nitride particles whose particle boundaries are unrecognizable is 10% to 100%. Such a component for a plasma apparatus having the aluminum nitride coating can provide a strong resistance to plasma attack and radical attack.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: October 16, 2018
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Michio Sato, Takashi Hino, Masashi Nakatani
  • Patent number: 9988702
    Abstract: The present invention provides a component for a plasma processing apparatus, the component comprising: a base material; an underlayer covering a surface of the base material; and an yttrium oxide film covering a surface of the underlayer, wherein the underlayer comprises a metal oxide film having a thermal conductivity of 35 W/m·K or less, the yttrium oxide film contains at least either particulate portions made of yttrium oxide or non-particulate portions made of yttrium oxide, the particulate portions being portions where a grain boundary demarcating an outer portion of the grain boundary is observed under a microscope, and the non-particulate portions being portions where the grain boundary is not observed under a microscope, the yttrium oxide film has a film thickness of 10 ?m or more and a film density of 96% or more, and when a surface of the yttrium oxide film is observed under a microscope, an area coverage ratio of the particulate portions is 0 to 20% in an observation range of 20 ?m×20 ?m and an ar
    Type: Grant
    Filed: May 22, 2013
    Date of Patent: June 5, 2018
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Michio Sato, Takashi Hino, Masashi Nakatani
  • Publication number: 20170022595
    Abstract: The present invention provides a plasma-resistant component for use in a plasma apparatus, wherein an oxide film is formed on at least part of a surface of a substrate of the component, the oxide film is a deposited oxide film formed as an aggregate of polycrystalline particles, the polycrystalline particles being formed by sinter-bonding of microparticles having an average particle size of 0.05 to 3 ?m, and the deposited oxide film has a film thickness of 10 ?m or more and 200 ?m or less and a film density of 90% or more. Due to above structure, it becomes possible to obtain a plasma-resistant component and a method of manufacturing a plasma-resistant component in which the generation of particles removed from the component is stably and effectively suppressed, and damage such as corrosion and deformation rarely occur during the regeneration process.
    Type: Application
    Filed: March 20, 2015
    Publication date: January 26, 2017
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Michio SATO, Takashi HINO, Masashi NAKATANI, Takashi NAKAMURA
  • Publication number: 20170002470
    Abstract: A base material is composed of a metal or ceramics, and an aluminum nitride coating is formed on an outermost surface thereof. The aluminum nitride coating is formed by impact sintering and contains fine particles having a particle diameter of 1 ?m or less. A thickness of the aluminum nitride coating is no less than 10 ?m. A film density of the aluminum nitride coating is no less than 90%. An area ratio of aluminum nitride particles whose particle boundaries are recognizable existing in a 20 ?m×20 ?m unit area of the aluminum nitride coating is 0% to 90% while an area ratio of aluminum nitride particles whose particle boundaries are unrecognizable is 10% to 100%. Such a component for a plasma apparatus having the aluminum nitride coating can provide a strong resistance to plasma attack and radical attack.
    Type: Application
    Filed: November 26, 2014
    Publication date: January 5, 2017
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Michio SATO, Takashi HINO, Masashi NAKATANI
  • Patent number: 9355855
    Abstract: The present invention provides a plasma etching apparatus component 1 includes a base material 10 and an yttrium oxide coating 20 formed by an impact sintering process and configured to cover a surface of the base material. The yttrium oxide coating 20 contains at least one of particulate portions and non-particulate portions. The yttrium oxide coating 20 has a film thickness of 10 ?m or above and a film density of 90% or above. The particulate portions have an area coverage ratio of 0 to 80% and the non-particulate portions have an area coverage ratio of 20 to 100%.
    Type: Grant
    Filed: November 29, 2011
    Date of Patent: May 31, 2016
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Michio Sato, Takashi Hino, Takashi Rokutanda, Masashi Nakatani
  • Publication number: 20150152540
    Abstract: The present invention provides a component for a plasma processing apparatus, the component comprising: a base material; an underlayer covering a surface of the base material; and an yttrium oxide film covering a surface of the underlayer, wherein the underlayer comprises a metal oxide film having a thermal conductivity of 35 W/m·K or less, the yttrium oxide film contains at least either particulate portions made of yttrium oxide or non-particulate portions made of yttrium oxide, the particulate portions being portions where a grain boundary demarcating an outer portion of the grain boundary is observed under a microscope, and the non-particulate portions being portions where the grain boundary is not observed under a microscope, the yttrium oxide film has a film thickness of 10 ?m or more and a film density of 96% or more, and when a surface of the yttrium oxide film is observed under a microscope, an area coverage ratio of the particulate portions is 0 to 20% in an observation range of 20 ?m×20 ?m and an ar
    Type: Application
    Filed: May 22, 2013
    Publication date: June 4, 2015
    Inventors: Michio Sato, Takashi Hino, Masashi Nakatani
  • Patent number: 8676568
    Abstract: A storage unit stores first filter information specifying the formats of messages and second filter information specifying weights for words or phrases. A first search unit selects messages matching the formats specified by the first filter information from a plurality of messages as messages to be extracted. A second search unit calculates the importance level of each message unselected by the first search unit, based on the words or phrases included in the message and the second filter information, and selects messages to be extracted, according to the calculated importance levels from the messages unselected by the first search unit.
    Type: Grant
    Filed: April 23, 2013
    Date of Patent: March 18, 2014
    Assignee: Fujitsu Limited
    Inventors: Akira Minegishi, Michio Sato, Takao Shibazaki, Naomi Ozawa
  • Publication number: 20130251949
    Abstract: The present invention provides a plasma etching apparatus component 1 includes a base material 10 and an yttrium oxide coating 20 formed by an impact sintering process and configured to cover a surface of the base material. The yttrium oxide coating 20 contains at least one of particulate portions and non-particulate portions. The yttrium oxide coating 20 has a film thickness of 10 ?m or above and a film density of 90% or above. The particulate portions have an area coverage ratio of 0 to 80% and the non-particulate portions have an area coverage ratio of 20 to 100%.
    Type: Application
    Filed: November 29, 2011
    Publication date: September 26, 2013
    Applicants: TOSHIBA MATERIALS CO., LTD., KABUSHIKI KAISHA TOSHIBA
    Inventors: Michio Sato, Takashi Hino, Takashi Rokutanda, Masashi Nakatani