Abstract: A method of producing a semiconductor device includes the steps of fitting a bottom part of a radiator block within a tapered hole which is provided at a bottom of a recess of a jig and positioning on the jig a lead frame having inner and outer leads and wherein the lead frame has an opening at a central part thereof, the opening being located above a top surface of the radiator block. The semiconductor chip is then mounted on the top surface part of the radiator block and bonded to the lead frame by plurality of wires.

Abstract: A semiconductor device includes a stage having top and bottom surfaces, a semiconductor element which is mounted on the top surface of the stage, a package part which is made of a first resin and encapsulates the semiconductor element so that a surface of the package part and the bottom surface of the stage lie on substantially the same plane, and a radiation part which is made of a second resin and is provided directly on the bottom surface of the stage and the surface of the package part. The second resin includes a filler material selected from a group consisting of metal powders and insulator powders so that a thermal conduction of the second resin is greater than that of the first resin.

Abstract: A semiconductor integrated circuit device includes a semiconductor element having pads, a lead frame stage on which the semiconductor element is mounted, and a plurality of terminal members mounted on the lead frame stage and located outside the semiconductor element, the terminal members respectively having electrically conductive patterns and being made of a material identical to a material of which the semiconductor element is made. The device includes inner leads spaced part from the lead frame stage, a first group of bonding members connecting the pads of the semiconductor element and the electrically conductive patterns of the terminal members to each other, and a second group of bonding members connecting the electrically conductive patterns of the terminal members and the inner leads to each other.

Abstract: A process for producing a semiconductor device having a package with a semiconductor element molded therein, and a plurality of leads, each constituted by an inner lead located inside the package and an outer lead located outside the package, the leads being arranged in a line at a predetermined pitch, and the semiconductor element being electrically connected to the inner lead of each of the leads, wherein each side edge of each of the outer leads is flat.

Abstract: A semiconductor integrated circuit device includes a semiconductor element having pads, a lead frame stage on which the semiconductor element is mounted, and a plurality of terminal members mounted on the lead frame stage and located outside the semiconductor element, the terminal members respectively having electrically conductive patterns and being made of a material identical to a material of which the semiconductor element is made. The device includes inner leads spaced part from the lead frame stage, a first group of bonding members connecting the pads of the semiconductor element and the electrically conductive patterns of the terminal members to each other, and a second group of bonding members connecting the electrically conductive patterns of the terminal members and the inner leads to each other.

Abstract: A semiconductor device includes a semiconductor chip mounted in a resin package body. A plurality of interconnection leads are provided on the resin package body along a lower edge thereof and project outwardly from the lower edge. A heat dissipation lead is connected to the resin package body for dissipating heat generated by the semiconductor chip. The heat dissipation lead includes a plate of a heat conducting material having a stage part and a heat sink part, wherein the stage part is held inside the resin package body and supports the semiconductor chip thereon. The heat sink part projects outwardly from the resin package body and includes a part that extends in a downward direction.

Abstract: A semiconductor device includes a stage having top and bottom surfaces, a semiconductor element which is mounted on the top surface of the stage, a package part which is made of a first resin and encapsulates the semiconductor element so that a surface of the package part and the bottom surface of the stage lie on substantially the same plane, and a radiation part which is made of a second resin and is provided directly on the bottom surface of the stage and the surface of the package part. The second resin includes a filler material selected from a group consisting of metal powders and insulator powders so that a thermal conduction of the second resin is greater than that of the first resin.

Abstract: A semiconductor device has such a construction that free tip ends of stage bars extending from a stage do not extend to side surfaces of a resin package, and the resin package is constituted by an inner resin package portion and an outer resin package portion. The free tip ends of the stage bars are located inside the outer resin package portion and are completely sealed. A method of producing the semiconductor device includes steps of providing wires for electrically connecting terminals of a semiconductor element which is mounted on the stage with corresponding leads and forming the inner resin package portion over the semiconductor element and its vicinity including portions of the leads and stage bars which are connected to the stage.

Abstract: A resin-sealed type semiconductor device includes a semiconductor chip and a radiation shield film disposed in close contact with the surface of the chip. Internal leads are bonded to the electrodes on the chip and external leads are bonded to the internal leads. A sealing resin is molded around the chip, the radiation shield film, and the internal leads. A method for manufacturing the semiconductor device mentioned above includes the steps of mounting a semiconductor chip onto a film carrier, with the surface of the chip are in close contact with the radiation shield film of the film carrier. The electrodes on the chip are bonded to the internal leads supported by the film carrier separating the internal leads and the radiation shield film from the frame of the film carrier, thereby forming an intermediate assembly comprising the chip, the radiation shield film, and the internal leads.