Abstract: Disclosed is an X-ray sensor having an active detector region including detector diodes on its surface. The X-ray sensor further includes a junction termination surrounding the surface region including the detector diodes. The junction termination includes a guard arranged closest to the end of the surface region, a field stop outside the guard and at least two field limiting rings, FLRs arranged between the guard and the field stop. A first FLR is arranged at a distance ?1 from the guard selected from the interval [4 ?m; 12 ?m], a second FLR is arranged at a distance ?2 from the first FLR selected from the interval [6.5 ?m; 14 ?m], and wherein the distance ?2 is larger than the distance ?1. The proposed technology also provides a method for constructing such an X-ray sensor and an X-ray imaging system including an X-ray detector system that includes such X-ray sensor.

Abstract: Disclosed is an X-ray sensor having an active detector region including detector diodes on its surface. The X-ray sensor further includes a junction termination surrounding the surface region including the detector diodes. The junction termination includes a guard arranged closest to the end of the surface region, a field stop outside the guard and at least two field limiting rings, FLRs arranged between the guard and the field stop. A first FLR is arranged at a distance ?1 from the guard selected from the interval [4 ?m; 12 ?m], a second FLR is arranged at a distance ?2 from the first FLR selected from the interval [6.5 ?m; 14 ?m], and wherein the distance ?2 is larger than the distance ?1. The proposed technology also provides a method for constructing such an X-ray sensor and an X-ray imaging system including an X-ray detector system that includes such X-ray sensor.

Abstract: An X-ray sensor (1) having an active detector region including a plurality of detector diodes (2) arranged on a surface region (3) of the X-ray sensor (1), a junction termination (4) surrounding the surface area (3) including the plurality of detector diodes (2), the junction termination (4) including a guard (5) arranged closest to the end of the surface region (3), a field stop (6) arranged outside the guard (2) and a number N of field limiting rings, FLRs (7) arranged between the guard (5) and the field stop (6), wherein each of the FLRs (7) are placed at positions selected so that distances between different FLRs (7) and between the guard and the first FLR lie within an effective area, the effective area being bounded by the lines ?=(10+1.3×(n?1)) ?m and ?=(5+1.05×(n?1)) ?m.

Abstract: An X-ray sensor (1) having an active detector region including a plurality of detector diodes (2) arranged on a surface region (3) of the X-ray sensor (1), a junction termination (4) surrounding the surface area (3) including the plurality of detector diodes (2), the junction termination (4) including a guard (5) arranged closest to the end of the surface region (3), a field stop (6) arranged outside the guard (2) and a number N of field limiting rings, FLRs (7) arranged between the guard (5) and the field stop (6), wherein each of the FLRs (7) are placed at positions selected so that distances between different FLRs (7) and between the guard and the first FLR lie within an effective area, the effective area being bounded by the lines ?=(10+1.3×(n?1)) ?m and ?=(5+1.05×(n?1)) ?m.

Abstract: There is provided an x-ray sensor (21) comprising an active detector region including a plurality of detector diodes (22) at a first side of the sensor, and a common junction termination (23) at a second opposite side of the sensor. Normally, this implies that the junction termination (23) is moved from the top side where the active detector area is located to the bottom side of the sensor, allowing for full utilization of the active detector area at the top side with detector diodes to the very edge of the sensor.

Abstract: There is provided an x-ray sensor (21) comprising an active detector region including a plurality of detector diodes (22) at a first side of the sensor, and a common junction termination (23) at a second opposite side of the sensor. Normally, this implies that the junction termination (23) is moved from the top side where the active detector area is located to the bottom side of the sensor, allowing for full utilization of the active detector area at the top side with detector diodes to the very edge of the sensor.

Abstract: Disclosed is an x-ray sensor having an active detector region including a plurality of detector diodes at a first side of the sensor, and with placement of the junction termination at a second opposite side of the sensor. Normally, this implies that the junction termination is moved from the top side where the active detector area is located to the bottom side of the sensor, allowing for full utilization of the active detector area at the top side with detector diodes to the very edge of the sensor.

Abstract: A semiconductor structure comprising a substrate, a drift layer, at least a doping region, an epitaxial channel, a gate oxide layer, a gate metal and an isolation layer is provided. The drift layer is disposed on the substrate. The doping region comprises a p-well region, an n+ region and a p+ region, wherein the n+ region and a portion of p+ region are disposed in the p-well region which is adjacent to the n+ region. The epitaxial channel is disposed over the drift layer and covers at least a portion of the n+ region. The epitaxial channel is composed of at least two epitaxial layers whose conduction types or doping concentrations are not identical. The gate oxide layer is disposed on the epitaxial channel. The gate metal is disposed on the gate oxide layer. The isolation layer is disposed on the gate metal and the gate oxide layer.

Abstract: A unipolar semiconductor device having a drift layer (3) doped according to a first conductivity type forming a conducting path and regions (7, 8) doped according to a second conductivity type and arranged next to the drift layer, has the drift layer and the regions of a semiconductor material having an ionization energy Ei of dopants of the second conductivity type therein exceeding 0.5 eV and/or a solubility of the dopants of the second conductivity type therein being less than 1018 cm?3.

Abstract: A unipolar semiconductor device having a drift layer (3) doped according to a first conductivity type forming a conducting path and regions (7, 8) doped according to a second conductivity type and arranged next to the drift layer, has the drift layer and the regions of a semiconductor material having an ionization energy Ei of dopants of the second conductivity type therein exceeding 0.5 eV and/or a solubility of the dopants of the second conductivity type therein being less than 1018 cm?3.

Abstract: A semiconductor device comprises at least one first semiconductor layer (1-4) and a second layer (8) applied on at least a surface portion of the first layer for protecting the device. The protecting layer is of a second material having a larger energy gap between the valence band and the conduction band than a first material forming said first layer. The second material has at least in one portion of said protecting layer a nano-crystalline and amorphous structure by being composed of crystalline gains with a size less than 100 nm and a resistivity at room temperature exceeding 1×1010 &OHgr;cm.

Abstract: A semiconductor device of planar structure has a pn-junction (10) formed by a first layer (1) doped according to a first conductivity type, n or p, and on top thereof a second layer (2) doped according to a second conductivity type. The second layer has a higher doping concentration than the first layer and a lateral edge thereof is provided with an edge termination with second zones of said second conductivity type separated by first zones (4) of said first conductivity type arranged so that the total charge and/or the effective sheet charge density of dopants according to said second conductivity type is decreasing towards the laterally outer border (8) of the edge termination. A third layer (5) doped according to said first conductivity type is arranged on top of said second layer at least in the region of the edge termination for burying the edge termination of the device thereunder.

Abstract: A semiconductor device of planar structure has a pn-junction (10) formed by a first layer (1) doped according to a first conductivity type, n or p, and on top thereof a second layer (2) doped according to a second conductivity type. The second layer has a higher doping concentration than the first layer and a lateral edge thereof is provided with an edge termination with second zones of said second conductivity type separated by first zones (4) of said first conductivity type arranged so that the total charge and/or the effective sheet charge density of dopants according to said second conductivity type is decreasing towards the laterally outer border (8) of the edge termination. A third layer (5) doped according to said first conductivity type is arranged on top of said second layer at least in the region of the edge termination for burying the edge termination of the device thereunder.

Abstract: A semiconductor diode structure comprising a Schottky junction, where a metal contact and a silicon carbide semiconducting layer of a first conducting type form said junction and where the edge of the junction exhibits a Junction Termination Extension (JTE) laterally surrounding the junction, said JTE having a charge profile with a stepwise or uniformly decreasing total charge or effective sheet charge density from an initial value to a zero or almost zero total charge at the outermost edge of the termination following a radial direction from the centre part of the JTE towards the outermost edge of the termination. The object of the junction termination extension is to control the electric field at the periphery of the diode.

Abstract: A bipolar transistor having at least a low doped drift layer (14) of crystalline SiC comprises at least one first layer (13) of a semi-conductor material having a wider energy gap between the conduction band and the valence band than an adjacent layer (14) of SiC.

Abstract: A transistor of SiC for high voltage and high switching frequency applications is a MISFET or an IGBT. This transistor comprises a plurality of laterally spaced active regions. The center to center distance of two adjacent active regions defines a lateral width of a cell of the transistor. The relation of the lateral width of an accumulation region defined as the region in the drift layer connecting to a gate-insulating layer in each individual cell and the lateral cell width is selected so as to keep the power losses in the transistor as a consequence of switching below a determined proportion to the power losses relating to conduction of the transistor for a predetermined switching frequency and on-state voltage for which the transistor is designed.

Abstract: A transistor of SiC having a drain and a highly doped substrate layer is formed on the drain. A highly n type buffer layer may optionally be formed on the substrate layer. A low doped n-type drift layer, a p-type base layer, a high doped n-type source region layer and a source are formed on the substrate layer. An insulating layer with a gate electrode is arranged on top of the base layer and extends substantially laterally from at least the source region layer to a n-type layer. When a voltage is applied to the gate electrode, a conducting inversion channel is formed extending substantially laterally in the base layer at an interface of the p-type base layer and the insulating layer. The p-type base layer is low doped in a region next to the interface to the insulating layer at which the inversion channel is formed and highly doped in a region thereunder next to the drift layer.

Abstract: A Schottky diode of SiC has a substrate layer, a drift layer and emitter layer regions formed in the drift layer. A metal layer makes an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer region between two adjacent emitter layer regions is allowed in the blocking state of the diode making the two adjacent p-type emitter layer regions form a continuous depleted region therebetween in this state.

Abstract: A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.

Abstract: A semiconductor component and a method for processing said component, which comprises a pn junction, where both the p-conducting (3) and the n-conducting layers (2) of the pn junction constitute doped silicon carbide layers and where the edge of the higher doped conducting layer of the pn junction exhibits a charge profile with a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the main pn junction to a zero or almost zero total charge or charge density at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.