Patents by Inventor Mihaela Balseanu

Mihaela Balseanu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11515151
    Abstract: Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: November 29, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kurt Fredrickson, Atashi Basu, Mihaela Balseanu, Ning Li
  • Publication number: 20220325412
    Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-? films are described.
    Type: Application
    Filed: June 24, 2022
    Publication date: October 13, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Shuaidi Zhang, Ning Li, Mihaela A. Balseanu, Bhaskar Jyoti Bhuyan, Mark Saly, Thomas Knisley
  • Publication number: 20220307134
    Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-? films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.
    Type: Application
    Filed: June 15, 2022
    Publication date: September 29, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Shuaidi Zhang, Ning Li, Mihaela A. Balseanu
  • Publication number: 20220310909
    Abstract: Methods of forming a stack without damaging underlying layers are discussed. The encapsulation layer and dielectric layer are highly conformal, have low etch rates, and good hermeticity. These films may be used to protect chalcogen materials in PCRAM devices or any substrates sensitive to oxygen or moisture. Some embodiments utilize a two-step process comprising a first ALD process to form an encapsulation layer and oxidation process to form a dielectric layer.
    Type: Application
    Filed: March 24, 2021
    Publication date: September 29, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Maribel Maldonado-Garcia, Cong Trinh, Mihaela A. Balseanu
  • Patent number: 11447865
    Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described.
    Type: Grant
    Filed: November 17, 2020
    Date of Patent: September 20, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Shuaidi Zhang, Ning Li, Mihaela A. Balseanu, Bhaskar Jyoti Bhuyan, Mark Saly, Thomas Knisley
  • Publication number: 20220262619
    Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 ?/min.
    Type: Application
    Filed: February 9, 2022
    Publication date: August 18, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Ning Li, Shuaidl Zhang, Mihaela A. Balseanu, Qi Gao, Rajesh Prasad, Tomohiko Kitajima, Chang Seok Kang, Deven Matthew Raj Mittal, Kyu-Ha Shim
  • Publication number: 20220205095
    Abstract: Apparatus and methods for modifying a susceptor having a silicon carbide (SiC) surface. The method includes exposing the silicon carbide surface (SiC) to an atmospheric plasma. The method increases the atomic oxygen content of the silicon carbide (SiC) surface. The disclosure also describes a plasma treatment apparatus having a susceptor holding assembly and a plasma nozzle.
    Type: Application
    Filed: December 31, 2020
    Publication date: June 30, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Francis Kanyiri Mungai, Vijayabhaskara Venkatagiriyappa, Yung-Cheng Hsu, Keiichi Tanaka, Mario D. Silvetti, Mihaela A. Balseanu
  • Patent number: 11371144
    Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: June 28, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Shuaidi Zhang, Ning Li, Mihaela Balseanu
  • Patent number: 11359281
    Abstract: Methods of selectively forming SiCON films are described. In some embodiments, the methods comprise sequential exposure to a silicon halide, a mixture of alkanolamine and amine reactants and a deposition plasma. In some embodiments, the method further comprises pre-cleaning the target substrate to improve selectivity.
    Type: Grant
    Filed: January 26, 2020
    Date of Patent: June 14, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shuaidi Zhang, Ning Li, Mihaela Balseanu
  • Publication number: 20220154337
    Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described.
    Type: Application
    Filed: November 17, 2020
    Publication date: May 19, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Shuaidi Zhang, Ning Li, Mihaela A. Balseanu, Bhaskar Jyoti Bhuyan, Mark Saly, Thomas Knisley
  • Publication number: 20220093443
    Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.
    Type: Application
    Filed: September 23, 2020
    Publication date: March 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Abhishek Chowdhury, Vijayabhaskara Venkatagiriyappa, Mihaela A. Balseanu, Jyoti Prakash Deo, Srinivas Ramakrishna, Keiichi Tanaka, Mandyam Sriram, Francis Kanyiri Mungai, Mario D. Silvetti, Sriharish Srinivasan
  • Patent number: 11270914
    Abstract: Electronic devices and methods to form electronic devices having a self-aligned via are described. An adhesion enhancement layer is utilized to promote adhesion between the conductive material and the sidewalls of the at least one via opening. The self-aligned vias decrease via resistance and reduce the potential to short to the wrong metal line.
    Type: Grant
    Filed: January 14, 2021
    Date of Patent: March 8, 2022
    Assignee: Applied Materials Inc.
    Inventors: Suketu Arun Parikh, Mihaela Balseanu
  • Publication number: 20220059362
    Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.
    Type: Application
    Filed: November 1, 2021
    Publication date: February 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Ning Li, Victor Nguyen, Mihaela A. Balseanu, Li-Qun Xia, Keiichi Tanaka, Steven D. Marcus
  • Publication number: 20220028660
    Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.
    Type: Application
    Filed: October 11, 2021
    Publication date: January 27, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Tsutomu Tanaka, John C. Forster, Ran Liu, Kenichi Ohno, Ning Li, Mihaela A. Balseanu, Keiichi Tanaka, Li-Qun Xia
  • Patent number: 11217443
    Abstract: Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: January 4, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Vinayak Veer Vats, Hang Yu, Philip Allan Kraus, Sanjay G. Kamath, William John Durand, Lakmal Charidu Kalutarage, Abhijit B. Mallick, Changling Li, Deenesh Padhi, Mark Joseph Saly, Thai Cheng Chua, Mihaela A. Balseanu
  • Publication number: 20210404058
    Abstract: Apparatus and methods for supplying a vapor to a processing chamber such as a film deposition chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, in fluid communication with an ampoule. A needle valve device restricts flow through the outlet conduit.
    Type: Application
    Filed: June 24, 2020
    Publication date: December 30, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Maribel Maldonado-Garcia, Cong Trinh, Mihaela A. Balseanu, Kevin Griffin, Ning Li, Zohreh Razavi Hesabi
  • Publication number: 20210399011
    Abstract: Described is selective deposition of a silicon nitride (SiN) trap layer to form a memory device. A sacrificial layer is used for selective deposition in order to permit selective trap deposition. The trap layer is formed by deposition of a mold including a sacrificial layer, memory hole (MH) patterning, sacrificial layer recess from MH side, forming a deposition-enabling layer (DEL) on a side of the recess, and selective deposition of trap layer. After removing the sacrificial layer from a slit pattern opening, the deposition-enabling layer (DEL) is converted into an oxide to be used as blocking oxide.
    Type: Application
    Filed: June 14, 2021
    Publication date: December 23, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Chang Seok Kang, Tomohiko Kitajima, Mihaela A. Balseanu
  • Publication number: 20210388497
    Abstract: Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.
    Type: Application
    Filed: June 10, 2021
    Publication date: December 16, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Cong Trinh, Maribel Maldonado-Garcia, Mihaela A. Balseanu, Alexander V. Garachtchenko, Tsutomu Tanaka
  • Publication number: 20210388499
    Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.
    Type: Application
    Filed: June 10, 2020
    Publication date: December 16, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuaidi Zhang, Ning Li, Mihaela Balseanu
  • Patent number: 11164753
    Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.
    Type: Grant
    Filed: January 13, 2015
    Date of Patent: November 2, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Keiichi Tanaka, Steven D. Marcus