Patents by Inventor Mihaela Balseanu

Mihaela Balseanu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective deposition of silicon nitride films for spacer applications
    Patent number: 10319583
    Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature so that the film can be selectively etched from the top and bottom of the feature relative to the film on the sidewalls of the feature.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: June 11, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Ning Li, Mihaela Balseanu, Li-Qun Xia
  • High temperature silicon oxide atomic layer deposition technology
    Patent number: 10170298
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: January 1, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Methods for depositing low K and low wet etch rate dielectric thin films
    Patent number: 10147599
    Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: December 4, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ning Li, Mark Saly, David Thompson, Mihaela Balseanu, Li-Qun Xia
  • Methods and apparatus for selective dry etch
    Patent number: 10134581
    Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature. Selectively dry etching the film from the top and bottom of the feature relative to the film on the sidewalls of the feature using a high intensity plasma.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: November 20, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Ning Li, Mihaela Balseanu, Li-Qun Xia, Dongqing Yang, Anchuan Wang
  • Method And Apparatus For Deposition Of Low-K Films
    Publication number: 20180301333
    Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.
    Type: Application
    Filed: April 12, 2018
    Publication date: October 18, 2018
    Inventors: Ning Li, Zhelin Sun, Mihaela Balseanu, Li-Qun Xia, Bhaskar Jyoti Bhuyan, Mark Saly
  • Atomic Layer Deposition Of Films Comprising Silicon, Carbon And Nitrogen Using Halogenated Silicon Precursors
    Publication number: 20180291505
    Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.
    Type: Application
    Filed: June 12, 2018
    Publication date: October 11, 2018
    Inventors: Victor Nguyen, Ning Li, Mihaela Balseanu, Li-Qun Xia, Mark Saly, David Thompson
  • Method And Apparatus For Selective Deposition Of Dielectric Films
    Publication number: 20180211833
    Abstract: Processing platforms having a central transfer station with a robot and an environment having greater than or equal to about 0.1% by weight water vapor, a pre-clean chamber connected to a side of the transfer station and a batch processing chamber connected to a side of the transfer station. The processing platform configured to pre-clean a substrate to remove native oxides from a first surface, form a blocking layer using a alkylsilane and selectively deposit a film. Methods of using the processing platforms and processing a plurality of wafers are also described.
    Type: Application
    Filed: January 24, 2018
    Publication date: July 26, 2018
    Inventors: Ning Li, Mihaela Balseanu, Li-Qun Xia, Dongqing Yang, Lala Zhu, Malcolm J. Bevan, Theresa Kramer Guarini, Wenbo Yan
  • Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors
    Patent number: 10023958
    Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: July 17, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Victor Nguyen, Ning Li, Mihaela Balseanu, Li-Qun Xia, Mark Saly, David Thompson
  • PEALD of films comprising silicon nitride
    Patent number: 9984868
    Abstract: Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: May 29, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Victor Nguyen, Woong Jae Lee, Mihaela Balseanu, Li-Qun Xia, Derek R. Witty
  • Methods And Systems To Modulate Film Stress
    Publication number: 20180130642
    Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.
    Type: Application
    Filed: November 7, 2017
    Publication date: May 10, 2018
    Inventors: Tsutomu Tanaka, John C. Forster, Ran Liu, Kenichi Ohno, Ning Li, Mihaela Balseanu, Keiichi Tanaka, Li-Qun Xia
  • High Temperature Silicon Oxide Atomic Layer Deposition Technology
    Publication number: 20180076023
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Application
    Filed: November 7, 2017
    Publication date: March 15, 2018
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Methods For Depositing Low K And Low Wet Etch Rate Dielectric Thin Films
    Publication number: 20180040470
    Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.
    Type: Application
    Filed: October 20, 2017
    Publication date: February 8, 2018
    Inventors: Ning Li, Mark Saly, David Thompson, Mihaela Balseanu, Li-Qun Xia
  • High temperature silicon oxide atomic layer deposition technology
    Patent number: 9875888
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: January 23, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Methods for depositing low k and low wet etch rate dielectric thin films
    Patent number: 9799511
    Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: October 24, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Ning Li, Mark Saly, David Thompson, Mihaela Balseanu, Li-Qun Xia
  • Methods And Apparatus For Selective Dry Etch
    Publication number: 20170263438
    Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature. Selectively dry etching the film from the top and bottom of the feature relative to the film on the sidewalls of the feature using a high intensity plasma.
    Type: Application
    Filed: March 10, 2017
    Publication date: September 14, 2017
    Inventors: Ning Li, Mihaela Balseanu, Li-Qun Xia, Dongqing Yang, Anchuan Wang
  • Selective Deposition Of Silicon Nitride Films For Spacer Applications
    Publication number: 20170263437
    Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature so that the film can be selectively etched from the top and bottom of the feature relative to the film on the sidewalls of the feature.
    Type: Application
    Filed: March 10, 2017
    Publication date: September 14, 2017
    Inventors: Ning Li, Mihaela Balseanu, Li-Qun Xia
  • Pulsed nitride encapsulation
    Patent number: 9748093
    Abstract: Aspects of the disclosure pertain to methods of forming conformal liners on patterned substrates having high height-to-width aspect ratio gaps. Layers formed according to embodiments outlined herein have been found to inhibit diffusion and electrical leakage across the conformal liners. The liners may comprise nitrogen and be described as nitride layers according to embodiments. The conformal liners may comprise silicon and nitrogen and may consist of silicon and nitrogen in embodiments. Methods described herein may comprise introducing a silicon-containing precursor and a nitrogen-containing precursor into a substrate processing region and concurrently applying a pulsed plasma power capacitively to the substrate processing region to form the conformal layer.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: August 29, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Patrick James Reilly, David Alan Bethke, Mihaela Balseanu
  • Cu/barrier interface enhancement
    Patent number: 9633861
    Abstract: Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.
    Type: Grant
    Filed: February 13, 2014
    Date of Patent: April 25, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Weifeng Ye, Mei-yee Shek, Mihaela Balseanu, Xiaojun Zhang, Xiaolan Ba, Yu Jin, Li-Qun Xia
  • High Temperature Thermal ALD Silicon Nitride Films
    Publication number: 20170053792
    Abstract: Methods for the deposition of SiN films comprising sequential exposure of a substrate surface to a silicon halide precursor at a temperature greater than or equal to about 600° C. and a nitrogen-containing reactant.
    Type: Application
    Filed: August 16, 2016
    Publication date: February 23, 2017
    Inventors: Xinliang Lu, Pingyan Lei, Chien-Teh Kao, Mihaela Balseanu, Li-Qun Xia, Mandyam Sriram
  • Method of forming magnetic tunneling junctions
    Patent number: 9564582
    Abstract: A method for fabricating an MRAM bit that includes depositing a spacer layer that protects the tunneling barrier layer during processing is disclosed. The deposited spacer layer prevents byproducts formed in later processing from redepositing on the tunneling barrier layer. Such redeposition may lead to product failure and decreased manufacturing yield. The method further includes non-corrosive processing conditions that prevent damage to the layers of MRAM bits. The non-corrosive processing conditions may include etching without using a halogen-based plasma. Embodiments disclosed herein use an etch-deposition-etch sequence that simplifies processing.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: February 7, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mahendra Pakala, Mihaela Balseanu, Jonathan Germain, Jaesoo Ahn, Lin Xue