Abstract: In a semiconductor memory device having a capacitor layer comprising a dielectric film or a ferroelectric film, as an interlayer insulation film formed between the capacitor and a wiring layer formed at the upper part thereof or an insulation film which covers the wiring layer, a multilayered film is used which consists of a first insulation film and a second insulation film laid upon the other; the former being a lower layer and being formed of an organic film, and the latter being an upper layer and being formed of a hard-mask material.

Abstract: As etch-stop films or Cu-diffusion barrier films used in insulation films constituting conductor layers of a stacked structure, films having smaller dielectric constant than silicon nitride films are used, and an insulation film at a lower-layer part of the stacked structure is made to have smaller dielectric constant than that at an upper-layer part thereof, and further this insulation film is a silicon oxide (SiO) film and has in the interior thereof, nano-pores of from 0.05 nm or more to 4 nm or less in diameter as chief construction. This makes it possible to dramatically reduce effective dielectric constant while keeping the mechanical strength of the conductore layers themselves, and can materialize a highly reliable and high-performance semiconductor device having mitigated the wiring delay of signals which pass through wirings.

Abstract: A semiconductor device capable of high speed operation with a substantially small interlayer capacitance is produced by steps of using an insulating film comprising an organic insulating film and an insulating film composed of an organometallic polymer material as an interlayer insulating film formed by coating, patterning the insulating film in a semi-thermosetting state, etching the organic insulating film as the lower layer by means of the organometallic polymer as a mask, using a plasma gas containing oxygen as the main component, and then conducting ultimate baking treatment of these insulating films.

Abstract: An insulation film in a thin film transistor is an insulation film formed by heating a coating film having a hydrogen silsesquioxane compound or a methyl silsesquioxane compound as its principal component. By designing the insulation film so as to have pores mainly of a diameter of 4 nm or less, the dielectric constant of the insulation film can thereby be lowered. As a result, it is possible to improve the operating speed of the thin film transistor. Thus, improvement in the operating speed of a thin film transistor structure is thereby realized.

Abstract: In a semiconductor memory device having a capacitor layer comprising a dielectric film or a ferroelectric film, as an interlayer insulation film formed between the capacitor and a wiring layer formed at the upper part thereof or an insulation film which covers the wiring layer, a multilayered film is used which consists of a first insulation film and a second insulation film laid upon the other; the former being a lower layer and being formed of an organic film, and the latter being an upper layer and being formed of a hard-mask material.

Abstract: The present invention provides the wiring structure having a wiring layer and insulation layer and the method of manufacturing the same, wherein at least a part of the wiring of said wiring layer comprises copper, and said insulation layer comprises the polyimide obtained by heating the polyimide precursor composition containing the polyimide precursor having the repeating unit which can be represented by the following general formula (Chemical formula 15). ##STR1## (In this formula, R.sup.1 is at least one type of quadrivalent organic group selected from among the Chemical formulae 16, while R.sup.2 is a bivalent organic group containing aromatic ring).