Patents by Inventor Mihir Mudholkar
Mihir Mudholkar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Remote contacts for a trench semiconductor device and methods of manufacturing semiconductor devices
Patent number: 11469312Abstract: A semiconductor device structure comprises a region of semiconductor material comprising a first conductivity type, a first major surface, and a second major surface opposite to the first major surface. A first trench gate structure includes a first trench extending from the first major surface into the region of semiconductor material, a first dielectric structure is over sidewall surfaces and a portion of a lower surface of the first trench, wherein the first dielectric structure comprises a first opening adjacent to the lower surface of the first trench, a first recessed contact extends through the first opening, and a first contact region is over the first recessed contact within the first trench, wherein the first recessed contact and the first contact region comprise different materials.Type: GrantFiled: April 6, 2020Date of Patent: October 11, 2022Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed T. Quddus, Mihir Mudholkar, Ali Salih -
Patent number: 11380805Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: GrantFiled: January 11, 2021Date of Patent: July 5, 2022Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Zia Hossain
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REMOTE CONTACTS FOR A TRENCH SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
Publication number: 20210313453Abstract: A semiconductor device structure comprises a region of semiconductor material comprising a first conductivity type, a first major surface, and a second major surface opposite to the first major surface. A first trench gate structure includes a first trench extending from the first major surface into the region of semiconductor material, a first dielectric structure is over sidewall surfaces and a portion of a lower surface of the first trench, wherein the first dielectric structure comprises a first opening adjacent to the lower surface of the first trench, a first recessed contact extends through the first opening, and a first contact region is over the first recessed contact within the first trench, wherein the first recessed contact and the first contact region comprise different materials.Type: ApplicationFiled: April 6, 2020Publication date: October 7, 2021Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed T. QUDDUS, Mihir MUDHOLKAR, Ali SALIH -
Publication number: 20210135019Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: ApplicationFiled: January 11, 2021Publication date: May 6, 2021Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Zia HOSSAIN
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Patent number: 10923604Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: GrantFiled: December 20, 2019Date of Patent: February 16, 2021Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Zia Hossain
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Patent number: 10847660Abstract: A method of forming a semiconductor device includes providing a region of semiconductor material comprising a major surface. A termination trench is provided extending from a first portion of the major surface into the region of semiconductor material to a first depth and has a first width. A first active trench is provided extending from a second portion of the major surface into the region of semiconductor material to a second depth and has a second width less than the first width. A second active trench is provided extending from a third portion of the major surface into the region of semiconductor material to a third depth and has a third width less than the first width. A first conductive material is provided adjoining a fourth portion of the major surface, which is configured as a Schottky barrier. The selected trench depth difference alone or in combination with other features provides a semiconductor device having improved performance characteristics.Type: GrantFiled: August 20, 2019Date of Patent: November 24, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Michael Thomason
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Patent number: 10847659Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: GrantFiled: August 1, 2019Date of Patent: November 24, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar
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Patent number: 10797182Abstract: A semiconductor device includes a region of semiconductor material having first and second opposing major surfaces. A trench structure includes a trench extending into the region of semiconductor material from the first major surface, wherein the first major surface defines a first horizontal plane in a cross-sectional view. The trench structure further includes a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region. A Schottky contact region is disposed adjacent the first major surface on opposing sides of the trench structure, the Schottky contact region having an upper surface residing on a second horizontal plane in the cross-sectional view. The dielectric region comprises an uppermost surface and configured such that a major portion of the uppermost surface is disposed above the first horizontal plane in the cross-sectional view. The structure and method provide a semiconductor device with improved performance (e.g.Type: GrantFiled: June 28, 2019Date of Patent: October 6, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mihir Mudholkar, Mohammed T. Quddus, Ikhoon Shin, Scott M. Donaldson
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Patent number: 10700219Abstract: A method for manufacturing a semiconductor component includes forming first mesa and second mesa structures from a semiconductor material by etching trenches into the semiconductor material. A doped region having a multi-concentration dopant profile is formed in at least the first mesa structure and doped polysilicon is formed in the trenches. The trenches are formed in a geometric pattern. A contact having three contact types is formed, wherein a first contact type is formed to the first mesa structure, a second contact type is formed to the second mesa structure, and a third contact type is formed to the doped polysilicon in the trenches. The first contact type has electrical properties between a conventional Schottky contact and a conventional Ohmic contact without being a conventional Schottky contact or a conventional Ohmic contact, the second contact type is a Schottky contact, the third contact type is an Ohmic contract.Type: GrantFiled: February 13, 2020Date of Patent: June 30, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Jefferson W. Hall
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Publication number: 20200185543Abstract: A method for manufacturing a semiconductor component includes forming first mesa and second mesa structures from a semiconductor material by etching trenches into the semiconductor material. A doped region having a multi-concentration dopant profile is formed in at least the first mesa structure and doped polysilicon is formed in the trenches. The trenches are formed in a geometric pattern. A contact having three contact types is formed, wherein a first contact type is formed to the first mesa structure, a second contact type is formed to the second mesa structure, and a third contact type is formed to the doped polysilicon in the trenches. The first contact type has electrical properties between a conventional Schottky contact and a conventional Ohmic contact without being a conventional Schottky contact or a conventional Ohmic contact, the second contact type is a Schottky contact, the third contact type is an Ohmic contract.Type: ApplicationFiled: February 13, 2020Publication date: June 11, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Jefferson W. HALL
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Publication number: 20200127145Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: ApplicationFiled: December 20, 2019Publication date: April 23, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Zia HOSSAIN
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Publication number: 20200105877Abstract: A method for forming a semiconductor device includes providing a region of semiconductor material. The method includes providing a trench structure having a trench extending into the region of semiconductor material from a first major surface, and a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region. The method includes providing a Schottky contact region disposed adjacent to the first major surface and adjacent to the trench structure. In one example, providing the Schottky contact region comprises forming a layer of material comprising as-formed nickel-chrome; exposing the layer of material to a temperature in a range from about 400 degrees Celsius through about 550 degrees Celsius; and after the step of exposing, removing any unreacted portions of the layer of material.Type: ApplicationFiled: December 3, 2019Publication date: April 2, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Michael THOMASON, Mohammed T. QUDDUS, Mihir MUDHOLKAR
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Patent number: 10608122Abstract: A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalls and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the doped region with the multi-concentration impurity profile.Type: GrantFiled: March 13, 2018Date of Patent: March 31, 2020Assignee: SEMICONDUTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Jefferson W. Hall
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Patent number: 10593760Abstract: A method for forming a semiconductor device includes providing a region of semiconductor material. The method includes providing a trench structure having a trench extending into the region of semiconductor material from a first major surface, and a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region. The method includes providing a Schottky contact region disposed adjacent to the first major surface and adjacent to the trench structure.Type: GrantFiled: August 2, 2018Date of Patent: March 17, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Michael Thomason, Mohammed T. Quddus, Mihir Mudholkar
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Patent number: 10566466Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: GrantFiled: April 26, 2019Date of Patent: February 18, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Zia Hossain
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Publication number: 20200044027Abstract: A method for forming a semiconductor device includes providing a region of semiconductor material. The method includes providing a trench structure having a trench extending into the region of semiconductor material from a first major surface, and a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region. The method includes providing a Schottky contact region disposed adjacent to the first major surface and adjacent to the trench structure.Type: ApplicationFiled: August 2, 2018Publication date: February 6, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Michael THOMASON, Mohammed T. QUDDUS, Mihir MUDHOLKAR
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Publication number: 20200006579Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: ApplicationFiled: April 26, 2019Publication date: January 2, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Zia HOSSAIN
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Publication number: 20200006580Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: ApplicationFiled: August 1, 2019Publication date: January 2, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR
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Publication number: 20190386153Abstract: A method of forming a semiconductor device includes providing a region of semiconductor material comprising a major surface. A termination trench is provided extending from a first portion of the major surface into the region of semiconductor material to a first depth and has a first width. A first active trench is provided extending from a second portion of the major surface into the region of semiconductor material to a second depth and has a second width less than the first width. A second active trench is provided extending from a third portion of the major surface into the region of semiconductor material to a third depth and has a third width less than the first width. A first conductive material is provided adjoining a fourth portion of the major surface, which is configured as a Schottky barrier. The selected trench depth difference alone or in combination with other features provides a semiconductor device having improved performance characteristics.Type: ApplicationFiled: August 20, 2019Publication date: December 19, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Michael THOMASON
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Publication number: 20190326447Abstract: A semiconductor device includes a region of semiconductor material having first and second opposing major surfaces. A trench structure includes a trench extending into the region of semiconductor material from the first major surface, wherein the first major surface defines a first horizontal plane in a cross-sectional view. The trench structure further includes a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region. A Schottky contact region is disposed adjacent the first major surface on opposing sides of the trench structure, the Schottky contact region having an upper surface residing on a second horizontal plane in the cross-sectional view. The dielectric region comprises an uppermost surface and configured such that a major portion of the uppermost surface is disposed above the first horizontal plane in the cross-sectional view. The structure and method provide a semiconductor device with improved performance (e.g.Type: ApplicationFiled: June 28, 2019Publication date: October 24, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mihir MUDHOLKAR, Mohammed T. QUDDUS, Ikhoon SHIN, Scott M. DONALDSON