Abstract: A substrate including a plurality of integrated circuitry die is fabricated or otherwise provided. The individual die have bond pads. A passivation layer comprising a silicone material is formed over the bond pads. Openings are formed through the silicone material to the bond pads. After the openings are formed, the die are singulated from the substrate. In one implementation, a method of fabricating integrated circuitry includes providing a substrate comprising a plurality of integrated circuitry die. Individual of the die have bond pads. A first blanket passivation layer is formed over the substrate in contact with the bond pads. A different second blanket passivation layer comprising silicone material is formed over the first passivation layer. Openings are formed through the first and second passivation layers to the bond pads. After the openings are formed, the die are singulated from the substrate. Other aspects and implementations are contemplated.

Abstract: A method for fabricating a BOC package includes the steps of providing a semiconductor die having planarized bumps encapsulated in a polymer layer, and providing a substrate having a plurality of conductors and an opening. The method also includes the steps of attaching the die to the substrate in a BOC configuration, wire bonding wires through the opening to the conductors and the bumps, and forming a die encapsulant on the die.

Abstract: A device includes a main body adapted to couple between a first element of a working string and a second element of the working string. A seal is provided about the main body and is adapted to substantially sealingly engage a wall of the wellbore. An conductor is carried by the main body. The conductor is adapted to communicate at least one of electrical current or a light signal between an interior of the first element and the second element while the seal is substantially sealingly engaging the wall of the wellbore, while the device is released from sealingly engaging the wall of the wellbore, and/or both.

Abstract: A semiconductor package includes a substrate, a die attached and wire bonded to the substrate, and a die encapsulant encapsulating the die. The die includes a circuit side having a pattern of die contacts, planarized wire bonding contacts bonded to the die contacts, and a planarized polymer layer on the circuit side configured as stress defect barrier. A method for fabricating the package includes the steps of forming bumps on the die, encapsulating the bumps in a polymer layer, and then planarizing the polymer layer and the bumps to form the planarized wire bonding contacts. The method also includes the steps of attaching and wire bonding the die to the substrate, and then forming the die encapsulant on the die.

Abstract: A device includes a main body adapted to couple between a first element of a working string and a second element of the working string. A seal is provided about the main body and is adapted to substantially sealingly engage a wall of the wellbore. An conductor is carried by the main body. The conductor is adapted to communicate at least one of electrical current or a light signal between an interior of the first element and the second element while the seal is substantially sealingly engaging the wall of the wellbore, while the device is released from sealingly engaging the wall of the wellbore, and/or both.

Abstract: Methods are provided to improve the adhesive bonding of a semiconductor die to a substrate through an adhesive paste by forming a layer of silicon dioxide on the back surface of the semiconductor die prior to applying the adhesive paste. Contacting the semiconductor die with ozone, in a gas mixture or in a mixture with water provides rapid oxidation of the silicon layer at the back of the semiconductor die to a silicon dioxide layer of at least 10 angstroms thick, which is sufficient to greatly improve bonding to the adhesive. The formation of a silicon dioxide surface layer prior to application of the adhesive is particularly beneficial when combined with rapid, snap curing processes, where the adhesive can be reliably cured by heating the semiconductor die for less than about 1 minute.

Abstract: A method for fabricating a BOC package includes the steps of providing a semiconductor die having planarized bumps encapsulated in a polymer layer, and providing a substrate having a plurality of conductors and an opening. The method also includes the steps of attaching the die to the substrate in a BOC configuration, wire bonding wires through the opening to the conductors and the bumps, and forming a die encapsulant on the die.

Abstract: A substrate including a plurality of integrated circuitry die is fabricated or otherwise provided. The individual die have bond pads. A passivation layer comprising a silicone material is formed over the bond pads. Openings are formed through the silicone material to the bond pads. After the openings are formed, the die are singulated from the substrate. In one implementation, a method of fabricating integrated circuitry includes providing a substrate comprising a plurality of integrated circuitry die. Individual of the die have bond pads. A first blanket passivation layer is formed over the substrate in contact with the bond pads. A different second blanket passivation layer comprising silicone material is formed over the first passivation layer. Openings are formed through the first and second passivation layers to the bond pads. After the openings are formed, the die are singulated from the substrate. Other aspects and implementations are contemplated.

Abstract: A substrate including a plurality of integrated circuitry die is fabricated or otherwise provided. The individual die have bond pads. A passivation layer comprising a silicone material is formed over the bond pads. Openings are formed through the silicone material to the bond pads. After the openings are formed, the die are singulated from the substrate. In one implementation, a method of fabricating integrated circuitry includes providing a substrate comprising a plurality of integrated circuitry die. Individual of the die have bond pads. A first blanket passivation layer is formed over the substrate in contact with the bond pads. A different second blanket passivation layer comprising silicone material is formed over the first passivation layer. Openings are formed through the first and second passivation layers to the bond pads. After the openings are formed, the die are singulated from the substrate. Other aspects and implementations are contemplated.

Abstract: A semiconductor package includes a substrate, a die attached and wire bonded to the substrate, and a die encapsulant encapsulating the die. The die includes a circuit side having a pattern of die contacts, planarized wire bonding contacts bonded to the die contacts, and a planarized polymer layer on the circuit side configured as stress defect barrier. A method for fabricating the package includes the steps of forming bumps on the die, encapsulating the bumps in a polymer layer, and then planarizing the polymer layer and the bumps to form the planarized wire bonding contacts. The method also includes the steps of attaching and wire bonding the die to the substrate, and then forming the die encapsulant on the die.

Abstract: A substrate including a plurality of integrated circuitry die is fabricated or otherwise provided. The individual die have bond pads. A passivation layer comprising a silicone material is formed over the bond pads. Openings are formed through the silicone material to the bond pads. After the openings are formed, the die are singulated from the substrate. In one implementation, a method of fabricating integrated circuitry includes providing a substrate comprising a plurality of integrated circuitry die. Individual of the die have bond pads. A first blanket passivation layer is formed over the substrate in contact with the bond pads. A different second blanket passivation layer comprising silicone material is formed over the first passivation layer. Openings are formed through the first and second passivation layers to the bond pads. After the openings are formed, the die are singulated from the substrate. Other aspects and implementations are contemplated.

Abstract: A semiconductor package includes a substrate, a die attached and wire bonded to the substrate, and a die encapsulant encapsulating the die. The die includes a circuit side having a pattern of die contacts, planarized wire bonding contacts bonded to the die contacts, and a planarized polymer layer on the circuit side configured as stress defect barrier. A method for fabricating the package includes the steps of forming bumps on the die, encapsulating the bumps in a polymer layer, and then planarizing the polymer layer and the bumps to form the planarized wire bonding contacts. The method also includes the steps of attaching and wire bonding the die to the substrate, and then forming the die encapsulant on the die.

Abstract: A semiconductor package includes a substrate, a die attached and wire bonded to the substrate, and a die encapsulant encapsulating the die. The die includes a circuit side having a pattern of die contacts, planarized wire bonding contacts bonded to the die contacts, and a planarized polymer layer on the circuit side configured as stress defect barrier. A method for fabricating the package includes the steps of forming bumps on the die, encapsulating the bumps in a polymer layer, and then planarizing the polymer layer and the bumps to form the planarized wire bonding contacts. The method also includes the steps of attaching and wire bonding the die to the substrate, and then forming the die encapsulant on the die.

Abstract: The present invention provides a semiconductor device having a protective layer for use in packaging the semiconductor device. The apparatus includes a dielectric layer, a first passivation layer formed above the dielectric layer, and a protective layer formed above the first passivation layer, the protective layer adapted to reduce stress defect failures in the semiconductor device when packaged.

Abstract: The present invention provides a semiconductor device having a protective layer for use in packaging the semiconductor device. The apparatus includes a dielectric layer, a first passivation layer formed above the dielectric layer, and a protective layer formed above the first passivation layer, the protective layer adapted to reduce stress defect failures in the semiconductor device when packaged.

Abstract: Methods are provided to improve the adhesive bonding of a semiconductor die to a substrate through an adhesive paste by forming a layer of silicon dioxide on the back surface of the semiconductor die prior to applying the adhesive paste. Contacting the semiconductor die with ozone, in a gas mixture or in a mixture with water provides rapid oxidation of the silicon layer at the back of the semiconductor die to a silicon dioxide layer of at least 10 angstroms thick, which is sufficient to greatly improve bonding to the adhesive. The formation of a silicon dioxide surface layer prior to application of the adhesive is particularly beneficial when combined with rapid, snap curing processes, where the adhesive can be reliably cured by heating the semiconductor die for less than about 1 minute.

Abstract: The present invention provides a semiconductor device having a protective layer for use in packaging the semiconductor device. The apparatus includes a dielectric layer, a first passivation layer formed above the dielectric layer, and a protective layer formed above the first passivation layer, the protective layer adapted to reduce stress defect failures in the semiconductor device when packaged.

Abstract: A semiconductor package includes a substrate, a die attached and wire bonded to the substrate, and a die encapsulant encapsulating the die. The die includes a circuit side having a pattern of die contacts, planarized wire bonding contacts bonded to the die contacts, and a planarized polymer layer on the circuit side configured as stress defect barrier. A method for fabricating the package includes the steps of forming bumps on the die, encapsulating the bumps in a polymer layer, and then planarizing the polymer layer and the bumps to form the planarized wire bonding contacts. The method also includes the steps of attaching and wire bonding the die to the substrate, and then forming the die encapsulant on the die.

Abstract: A semiconductor package includes a substrate, a die attached and wire bonded to the substrate, and a die encapsulant encapsulating the die. The die includes a circuit side having a pattern of die contacts, planarized wire bonding contacts bonded to the die contacts, and a planarized polymer layer on the circuit side configured as stress defect barrier. A method for fabricating the package includes the steps of forming bumps on the die, encapsulating the bumps in a polymer layer, and then planarizing the polymer layer and the bumps to form the planarized wire bonding contacts. The method also includes the steps of attaching and wire bonding the die to the substrate, and then forming the die encapsulant on the die.

Abstract: A substrate including a plurality of integrated circuitry die is fabricated or otherwise provided. The individual die have bond pads. A passivation layer comprising a silicone material is formed over the bond pads. Openings are formed through the silicone material to the bond pads. After the openings are formed, the die are singulated from the substrate. In one implementation, a method of fabricating integrated circuitry includes providing a substrate comprising a plurality of integrated circuitry die. Individual of the die have bond pads. A first blanket passivation layer is formed over the substrate in contact with the bond pads. A different second blanket passivation layer comprising silicone material is formed over the first passivation layer. Openings are formed through the first and second passivation layers to the bond pads. After the openings are formed, the die are singulated from the substrate. Other aspects and implementations are contemplated.