Abstract: A semiconductor package includes a substrate, a die attached and wire bonded to the substrate, and a die encapsulant encapsulating the die. The die includes a circuit side having a pattern of die contacts, planarized wire bonding contacts bonded to the die contacts, and a planarized polymer layer on the circuit side configured as stress defect barrier. A method for fabricating the package includes the steps of forming bumps on the die, encapsulating the bumps in a polymer layer, and then planarizing the polymer layer and the bumps to form the planarized wire bonding contacts. The method also includes the steps of attaching and wire bonding the die to the substrate, and then forming the die encapsulant on the die.

Abstract: Methods are provided to improve the adhesive bonding of a semiconductor die to a substrate through an adhesive paste by forming a layer of silicon dioxide on the back surface of the semiconductor die prior to applying the adhesive paste. Contacting the semiconductor die with ozone, in a gas mixture or in a mixture with water provides rapid oxidation of the silicon layer at the back of the semiconductor die to a silicon dioxide layer of at least 10 angstroms thick, which is sufficient to greatly improve bonding to the adhesive. The formation of a silicon dioxide surface layer prior to application of the adhesive is particularly beneficial when combined with rapid, snap curing processes, where the adhesive can be reliably cured by heating the semiconductor die for less than about 1 minute.

Abstract: Methods are provided to improve the adhesive bonding of a semiconductor die to a substrate through an adhesive paste by forming a layer of silicon dioxide on the back surface of the semiconductor die prior to applying the adhesive paste. Contacting the semiconductor die with ozone, in a gas mixture or in a mixture with water provides rapid oxidation of the silicon layer at the back of the semiconductor die to a silicon dioxide layer of at least 10 angstroms thick, which is sufficient to greatly improve bonding to the adhesive. The formation of a silicon dioxide surface layer prior to application of the adhesive is particularly beneficial when combined with rapid, snap curing processes, where the adhesive can be reliably cured by heating the semiconductor die for less than about 1 minute.