Abstract: A system includes a chamber configured to receive a semiconductor wafer, a first thermocouple coupled to the chamber and wherein at least a portion of the first thermocouple is disposed within an interior volume of the chamber, a first sample hose in fluid communication with an interior volume of the first thermocouple, and a detector in fluid communication with the first sample hose. The detector is configured to analyze a gas receive from the first sample hose. In an embodiment, the first thermocouple includes an end cap including a first channel and a second channel, wherein a first thermocouple wire of the first thermocouple extends through the first channel of the end cap and the first sample hose is coupled to the second channel.

Abstract: The present invention is a transfer arm that moves a wafer inside a piece of equipment designed to manufacture electronic circuits. The transfer arm has a hand, used to securely hold the wafer using Bernoulli's Principle. The transfer arm has a left wrist and a right wrist connected to the hand, wherein the hand and the left wrist and the right wrist comprise sealed gears and sealed bearings. A left upper arm is connected by being threaded to the left wrist and a left elbow and a right upper arm is connected by being threaded to the right wrist and a right elbow. A left lower arm is connected by being threaded to the left elbow and the left shoulder and a right lower arm is connected by being threaded to the right elbow and the right shoulder.

Abstract: A gear box may have a housing and a driving shaft with a gear and a driven shaft with a gear. The shafts may be rotatably mounted in the housing and positioned so that the driving shaft gear meshes, i.e., is in operable position, with the driven shaft gear. An eccentric bearing adjust may be positioned to surround a part of the driving shaft (or a part of the driven shaft). A first and second tip set screws may be positioned in the housing in operable position to the eccentric bearing adjust. The first and second tip set screws are configured to rotate the eccentric bearing which moves a center position of the driving shaft (or a center position of the driven shaft) when the screws are tightened or loosened. Rotating and calibrating the eccentric bearing adjust mitigates any backlash between the driving shaft gear and the driven shaft gear.

Abstract: The present invention generally relates to an injector for a semiconductor fabrication tool for dispensing a material into an interior volume of the fabrication tool during a fabrication process of a semiconductor wafer. The injector may have a micrometer that may be adjusted so as to totally stop the flow of material through the injector or the micrometer may be adjusted to allow a range of precisely controlled flow rates of material through the injection. The injector is also preferably able to be easily taken apart and cleaned in the field, thereby increasing the injectors useful lifetime.

Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Abstract: Apparatus and methods are described for performing additive manufacturing. The apparatus includes a vacuum chamber for fabricating a workpiece composed of deposited metal, a table positioned within the vacuum chamber, and configured to support fabrication of the workpiece on a substrate, and one or more multiple droplet emitters coupled to the vacuum chamber, and arranged to irradiate the workpiece with a stream of molten metal droplets during fabrication.

Abstract: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

Abstract: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Abstract: Apparatus and methods are described for performing additive manufacturing. The apparatus includes a vacuum chamber for fabricating a workpiece composed of deposited metal, a table positioned within the vacuum chamber, and configured to support fabrication of the workpiece on a substrate, and one or more multiple droplet emitters coupled to the vacuum chamber, and arranged to irradiate the workpiece with a stream of molten metal droplets during fabrication.

Abstract: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

Abstract: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Abstract: A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

Abstract: A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

Abstract: A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

Abstract: A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

Abstract: A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing end of the support tube, wherein the cap receives the free ends of the pair of wires. The cap allowing the pair of wires to translate freely therethrough to accommodate the difference in thermal expansion and contraction of the pair of wires relative to the thermal expansion and contraction of the support tube.