Process feed management for semiconductor substrate processing
Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.
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This application is a continuation of and claims priority to U.S. patent application Ser. No. 13/284,642 entitled “PROCESS FEED MANAGEMENT FOR SEMICONDUCTOR SUBSTRATE PROCESSING,” filed Oct. 28, 2011, the disclosure of which is hereby incorporated herein by reference.
BACKGROUNDSupplying process reactants to semiconductor processing tools can be difficult. For example, ambient gases may diffuse into low pressure portions of the process tool, potentially contaminating process reactants. Further, some process reactants may condense on various process tool surfaces under some processing conditions. Contamination and/or condensation of process reactants may lead to substrate quality problems as well as potential process control problems.
SUMMARYVarious embodiments are disclosed herein that relate to managing the process feed conditions for a semiconductor process module. For example, one embodiment provides a gas channel plate for a semiconductor process module. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.
This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Furthermore, the claimed subject matter is not limited to implementations that solve any or all disadvantages noted in any part of this disclosure.
Modern semiconductor devices may include integrated structures formed by the deposition of films in high-aspect ratio cavities or under low thermal budget conditions. Typical chemical vapor deposition (CVD), thermal growth, and/or physical vapor deposition (PVD) approaches may not be suited to the process integration constraints for such structures. Atomic layer deposition (ALD) processes are sometimes used to address these challenges. In ALD processes, thin layers of film are deposited by alternately adsorbing two or more reactants to the substrate without supplying the reactants to the substrate process environment concurrently. By supplying each reactant separately, only deposited film layers and the surface active species of one reactant chemisorbed to those film layers are present on the substrate when the other reactant is supplied. Consequently, highly conformal films may be formed on the substrate surface, even in high-aspect ratio features.
The layer-by-layer nature of ALD processes may present challenges to enhance substrate throughput during manufacturing. For example, some approaches to increase throughput include selecting process reactants based on reactivity characteristics that may enhance surface decomposition reactions on the substrate relative to other process reactants. However, the presence of ambient gases, such as oxygen and/or water vapor, may lead to increases in gas phase decomposition as the reactivity of process reactants increases, potentially leading to substrate non-uniformity defects, small particle defects that may decorate the substrate surface, and/or film composition contamination.
Other approaches to enhance throughput include supplying the substrate with a quantity of reactant suitable to provide acceptable substrate coverage of surface active species in a short-duration, high-concentration pulse. However, because some process reactants, such as those including metals, may have higher molecular weights than the carrier gases with which they may be mixed, it may be more difficult to distribute the process reactant on the substrate surface with suitable coverage as pulse duration decreases. Consequently, cross-substrate concentration gradients may form in the gas phase above the substrate during process reactant exposure phases that may lead to substrate non-uniformity defects. In some settings, process reactants may condense on process surfaces even under vacuum conditions. Such reactant condensation upstream of the substrate may lead to small particle defect decoration on the substrate surface. Additionally or alternatively, some process reactants may undergo gas phase or surface decomposition upstream of the substrate, potentially leading to film contamination or other process quality problems. While the problems that may result from process reactants like those described above, such as organometallic reactants having low vapor pressures, are described herein in the context of ALD processes, it will be understood that similar issues may exist for some process reactants used m some low-pressure CVD deposition processes, low-pressure etch processes, and so on.
The disclosed embodiments relate to hardware and methods for managing the process feed conditions for a semiconductor process module. For example, one embodiment provides a network of purge gas channels included in a gas channel plate or a showerhead for a semiconductor process module. The example purge gas channels fluidly communicate with an ambient environment via gaps positioned between the ambient environment and a gasket sealing the gas channel plate or the showerhead to another portion of the semiconductor process module. Consequently, ambient gas diffusion or permeation across the gasket and into the low pressure reactor may be mitigated, potentially reducing film impurities and/or particle defects.
Another embodiment provides a semiconductor process module including a showerhead volume upstream of a substrate. The example showerhead volume includes contours configured to form a radially symmetric profile within the showerhead volume with respect to an axial centerline of a process feed inlet opening into the showerhead volume. The example showerhead volume contours are shaped so that opposing surfaces of the semiconductor process module forming the outer edges of the showerhead volume are closer to one another than those same surfaces at a central region of the showerhead volume. Thus, though process feed is distributed to the substrate via showerhead gas distribution holes distributed across the showerhead, the process feed velocity may remain approximately constant as the radial distance from the process feed inlet increases, potentially enhancing substrate uniformity.
Another embodiment provides a heat exchanger for a showerhead volume of a semiconductor process module. The example heat exchanger includes a heat exchanger fluid director plate and a gas channel plate. The example gas channel plate includes a plurality of heat exchange structures separated from one another by intervening gaps. The example heat exchange fluid director plate is supported above a heat exchange surface of the gas channel plate to form a heat exchange fluid channel into which the plurality of heat exchange structures protrude so that heat exchange fluid may flow between and above a portion of the heat exchange structures. Consequently, condensation of process reactants within the showerhead volume may potentially be reduced, as may gas phase and/or surface reaction of process reactants upstream of the substrate. In turn, defect generation caused by gas phase and/or condensed phase reactions may potentially be avoided. It will be understood that the various embodiments described herein are not intended to be limited to solving the example problems referenced within this disclosure, which are provided for illustrative purposes.
The disclosed embodiments may be fabricated from virtually any suitable materials. For example, various structural portions may be fabricated from aluminum, titanium, and/or stainless steel that may provide suitable mechanical, thermal, and/or chemical properties relevant to a particular portion of a selected embodiment. Other portions may be made from suitable ceramics or polymers. For example, various gaskets may include synthetic elastomer and/or fluoroelastomer materials that may provide enhanced chemical resistance to some the process feeds, such as halogenated inorganic compounds, relative to alternative sealing materials. Accordingly, it will be understood that descriptions of example materials or fabrication techniques are provided for illustrative purposes alone. Such descriptions are not intended to be limiting.
As shown in
Process feed inlet 106 opens into a central region of showerhead volume 108 formed between a gas channel plate 110 and a showerhead 112. For example, in some embodiments, an axial centerline of process feed inlet 106 may be aligned with a central axis of showerhead volume 108, so that process feed may potentially be uniformly distributed radially within showerhead volume 108. Showerhead volume 108 provides a space for the process feed flow to develop upon exit from process feed inlet 106, potentially providing time and space for the velocity and flow of the process feed to adjust from the higher velocity conditions likely present within pulse valve manifold 104 to the comparatively lower velocity conditions likely selected for substrate processing. In some embodiments, showerhead volume 108 may enclose a volume of between 100,000 and 800,000 mm3. In one non-limiting example, showerhead volume 108 may enclose a volume of between 300,000 and 500,000 mm3 upstream of a single 300-mm diameter substrate.
In the embodiment shown in
Showerhead distribution holes 114 direct the process feed toward substrate process environment 116 where substrate processing occurs. A susceptor 118 supports a substrate (not shown) within substrate process environment 116 during processing operations. Susceptor 118 may include a heater used to adjust a temperature of the substrate before, during, and/or after substrate processing. Susceptor 118 is mounted on an elevator 120 so that the substrate may be raised and lowered within lower reactor 122 to facilitate substrate transfer in and out of semiconductor process module 100. A lift pin 124 is included to raise and lower the substrate from susceptor 118 during substrate transfer operations.
Portions of unreacted process feed, carrier gases, and gases produced during substrate processing are exhausted from substrate process environment 116 via process exhaust outlet 126. In the embodiment shown in
Pressure within reactor 102 is controlled at least in part by one or more pressure control devices (not shown), such as a throttle valve, fluidly coupled with upper reactor exhaust 132 and lower reactor exhaust 134. However, it will be appreciated that pressure within reactor 102 may also be controlled by suitable manipulation of various gas feeds to and bypasses around reactor 102. Accordingly, such feeds and bypasses may also be considered pressure control devices within the scope of the present disclosure.
When semiconductor process module 100 is under vacuum, ambient gases, such as oxygen and water vapor, may diffuse into low pressure environments like showerhead volume 108 and/or process environment 116, potentially contaminating the process feed, generating small particle defects, causing film contamination, impurity incorporation, and/or substrate non-uniformity defects. As used herein, a low pressure environment refers to portions of semiconductor process module 100 that experience sub-ambient pressure during process and/or maintenance operations. For example, showerhead volume 108 may exhibit a pressure within a range of 0.5 to 20 Torr in some non-limiting process settings. As another example, process environment 116 may experience a pressure within a range of 0.5 to 5 Torr in some non-limiting process settings. By reducing the pressure below an ambient pressure within showerhead volume 108 or process environment 116, a low pressure environment is created within that respective portion of semiconductor process module 100.
In some embodiments, gap 304 may act as an exit path for purge gases used to dilute the concentration of ambient gases, reducing their chemical potential for permeation from the outer perimeter (e.g., from an ambient side) of a gasket positioned between showerhead 112 and gas channel plate 110. For example,
As shown in
The purge gas channels described herein may be formed in almost any suitable manner. Non-limiting examples of techniques for forming the various annular purge gas channels include milling and/or casting. The various vertical purge gas channels may also be formed by drilling, casting, or other suitable techniques. It will be understood that the fabrication of the purge gas channels may leave openings that may result in fugitive emissions of purge gas, potentially leading to pressure drop within the purge system and/or reduced flow rate from gap 304. In some embodiments, some or all of these openings may be fitted with removable and/or permanent closures or seals. For example,
Ambient gases may also contaminate the low pressure environment by diffusion from confined spaces after maintenance activity. Such “virtual leaks” can be difficult to trace, as the ambient gas results from gas trapped in so-called “dead volumes,” or volumes that are exposed to the low pressure environment but that are not readily purged or pumped down. Thus, in some embodiments, some seals and gaskets may be positioned within a preselected distance of a low pressure environment such as showerhead volume 108, process environment 116, suitable portions of the process feed upstream of showerhead volume 108 and suitable portions of the process exhaust downstream of process environment 116.
For example,
As another example, in some embodiments, a seal or gasket sealing showerhead volume 108 may be positioned within a preselected distance of a showerhead distribution hole 114. In the embodiment shown in
It will be appreciated that the approaches to managing ambient gas exposure to the low pressure environment may also be applied to other portions of semiconductor process module 100. For example, purge gas channels may also be included in other portions of semiconductor process module 100 to prevent ambient gas diffusion into substrate process environment 116 and/or low pressure environments. For example, in some embodiments, gas channel plate 110 may include a purge gas channel fluidly communicating with an ambient environment at a location between the ambient environment and a gasket disposed between the gas channel plate and a pulse valve manifold positioned upstream of the gas channel plate.
As another example, in some embodiments, a purge plate 130 may include purge gas channels configured to prevent diffusion of ambient gases across gaskets sealing showerhead 112 to purge plate 130 and/or lower reactor 122 to purge plate 130. For example,
The purge gas channel shown in
The embodiment shown in
Process feed conditions within pulse valve manifold 104 may be adapted to high speed, high pressure delivery of various process feed species to enhance substrate throughput and process speed. However, the rapid expansion of process feed from these conditions into lower pressure conditions within showerhead volume 108 may potentially contribute to substrate process control problems and/or substrate quality excursions. For example, the process feed may experience transient cooling as process feed pressure drops in the vicinity of process feed inlet 106, potentially cooling surfaces surrounding process feed inlet 106. In turn, this may cause condensation of some species of the process feed onto gas channel plate 110 near process feed inlet 106. Further, in some settings, rapid expansion of the process feed may alter fluid mixing of various reactants and inert species included in the process feed. Accordingly, in some embodiments, flow expansion structures may be provided upstream of process feed inlet 106 to transition flow conditions within the process feed.
In the embodiment shown in
Virtually any suitable manner of expanding fluid flow within flow expansion structure 1002 may be employed without departing from the scope of the present disclosure. As shown in
In the embodiment shown in
The example shown in
An optional impingement plate 1010 is shown in
As the process feed entering showerhead volume 108 via process feed inlet 106 expands, the velocity and flow orientation of the process feed changes. In the embodiment shown in
Accordingly, in some embodiments, showerhead volume 108 may be contoured to enhance the flow of the process feed toward the radial edges of showerhead volume 108. In the embodiment shown in
While the embodiment in
It will be appreciated that almost any suitable contour may be applied to the showerhead volumes described herein without departing from the scope of the present disclosure. In some embodiments, a linearly-shaped radially symmetric profile may be formed on a portion of diffusion surface 1012 and/or upper surface 1014 of the showerhead exposed to showerhead volume 108, the linearly-shaped portion being disposed at an angle of between 0 and 5 degrees with respect to a reference plane positioned parallel with the substrate, such as a reference plane defining a widest portion of showerhead volume 108. For example, where diffusion surface 1012 of gas channel plate 110 is contoured, the linearly shaped portion may be formed at a negative angle of between 0 and −5 degrees with respect to the reference plane. Where upper surface 1014 of showerhead 112 is contoured, the linearly-shaped portion may be formed at a positive angle of between 0 and 5 degrees with respect to the reference plane. Thus, in the embodiment shown in
In some other embodiments, non-linear shapes may be formed into portions of a diffusion surface and/or surfaces of a showerhead exposed to a showerhead volume. For example, a portion of a diffusion surface may exhibit a Gaussian-shaped or bell-shaped profile when viewed in cross-section with respect to a reference plane positioned parallel to a substrate, such as a reference plane defining a widest portion of a showerhead volume. The various contours described herein may be formed over any suitable portion of the surfaces on which they are formed. For example, a contour formed on gas channel plate 110 and/or showerhead 112 may be formed so that more than 95% of a surface of respective part exhibits a contour as described herein. Such contours may be formed in almost any suitable manner. For example, the contours may be formed by milling, casting, water jet cutting and/or laser cutting.
While the embodiments illustrated in the figures depict contoured surfaces of example showerheads 112 and gas channel plates 110 that are integrated into those respective items, it will be understood that in some embodiments contoured surfaces may be prepared as separate parts that may be installed into and removed from their respective parts. For example, a first set of contours configured for a first process chemistry may be fitted to a gas channel plate 110 and/or a showerhead 112 and later removed and replaced by a second set of contours configured for a second process chemistry. This may allow for the rapid development and testing of various contours, for example using suitable three-dimensional printing technology, without the replacement of entire showerhead and/or gas channel plate assemblies.
As shown in
In some embodiments, showerhead 112 may comprise an exhaust body configured to gather process exhaust that is separate from a body that distributes the process feed to the substrate. While a single-body showerhead may potentially avoid some dead volumes formed near the outer region of process environment 116, it will be appreciated that a two-piece showerhead may offer other advantages. For example, a two-piece showerhead 112 may allow differently profiled gas distribution bodies to be retrofitted to semiconductor process module 100 without moving the exhaust collection body. In turn, re-calibration of a gap included in the process exhaust outlet 126 may be minor relative to procedures for replacement of a single-body showerhead.
Some low vapor pressure species included in process feeds supplied to a substrate during substrate processing may condense on process surfaces under some process conditions. For example, some species may condense on surfaces within showerhead volume 108. Accordingly, in some embodiments, semiconductor process module 100 may include heat exchange structures thermally coupled with showerhead volume 108 to adjust a temperature of showerhead volume 108. As used herein, being thermally coupled means that causing a change in temperature of at a heat exchange structure will cause in a change in temperature at a surface of showerhead volume 108 and vice-versa. Such temperature changes may be determined by various suitable techniques, such as infrared- or thermocouple-based temperature measurement techniques.
Such heat exchange structures may be included on a heat exchange surface of gas channel plate 110 that project into a heat exchange fluid. Other heat exchange mechanisms, such as heaters, may also be thermally coupled with showerhead volume 108. In turn, the temperature of showerhead volume 108 may be adjusted during substrate processing so that process feed condensation might potentially be avoided.
In some embodiments, a plurality of heaters may be provided in gas channel plate 110 and showerhead 112, each controlled and powered independently from one another. For example,
It will be understood that almost any suitable heater may be employed without departing from the scope of the present disclosure. In some embodiments, a flexible, cable-style heater may be provided that is configured to fit into a heater groove cut into gas channel plate 110. In some embodiments, a heater may include positive temperature coefficient materials configured to exhibit an increase in electrical resistance as temperature increases beyond a predetermined threshold, potentially reducing a risk of damage from temperature excursions exceeding a predetermined ceiling relative to alternate style heaters. In the embodiment shown in
As introduced above, a heater groove is formed into gas channel plate 110 and/or showerhead 112 to receive heat from a heater. Viewed as a cross-section, the sidewalls and bottom of a heater groove may make contact with a heater at several locations, potentially improving heat transfer from heater relative to configurations where a heater makes contact on one side only, such as a heater resting on a surface. It will be understood that the heater groove may be formed into gas channel plate 110 and/or showerhead 112 in virtually any suitable manner. For example, a heater groove may be milled and/or cast in some embodiments. Further, the heater groove may be shaped into virtually any suitable form. Non-limiting examples of shapes for a heater groove include annular, serpentine paths having twists in at least two directions, and spiral paths that may or may not include branches. Such shapes may be arranged in almost any suitable position within gas channel plate 110 and/or showerhead 112. For example, in some embodiments, heater grooves may be positioned around a center of gas channel plate 110 and/or showerhead 112 in a radially-symmetric arrangement.
In some embodiments, a retainer, shown as retainers 1310a and 1310b in
Additionally or alternatively, in some embodiments, a temperature of gas channel plate 110 may be adjusted using a suitable heat exchange fluid supplied to heat exchange surfaces thereon. For example, in one scenario, cool air may be provided to moderate heating provided by the heater. In another scenario, warm air may be provided in place of or to supplement heating provided by the heater. In each scenario, use of a heat exchange fluid may potentially smooth a thermal profile within gas channel plate 110, so that hot and/or cold spots may be avoided. Virtually any suitable heat exchange fluid may be employed without departing from the scope of the present disclosure. Example suitable heat exchange fluids include, but are not limited to, gases like air and nitrogen, and liquids like water and heat transfer oils.
The embodiment depicted in
It will be understood that heat exchange structures 1312 may have almost any suitable shape. The embodiment shown in
In some embodiments, the volume of heat exchange structures 1312 may vary according to a radial position on heat exchange surface 1316. By varying the volume according to radial position, it is possible that the amount of heat exchanged with the heat exchange fluid may be regulated. In the embodiment shown in
Heat exchange structures 1312 may be formed in any suitable manner and from any suitable material. For example, in some embodiments, heat exchange structures 1312 may be formed from aluminum, stainless steel, or titanium. Heat exchange structures 1312 may also be formed during fabrication of gas channel plate 110 or added at a later time. For example, in some embodiments, heat exchange structures 1312 may be machined into gas channel plate 110. In some other embodiments, heat exchange structures 1312 may be separate parts that may be added, subtracted, and rearranged on heat exchange surface 1316.
Heat exchange structures 1312 may be distributed in virtually any suitable arrangement on gas channel plate 110. In the embodiment shown in
As shown in
The broad flow direction arrows illustrated in
While the flow direction arrows in
In some embodiments, heat exchange fluid director plate 1320 may be included in heat exchange plenum assembly 204. Heat exchange plenum assembly 204 may provide ambient air as a heat exchange fluid to heat exchange surface 1316 via heat exchange fluid channel 1318 and then exhaust the air back into the ambient environment.
In some embodiments, heat exchange fluid director plate 1502 is configured to be supported by a heat exchange fluid director plate support surface included on gas channel plate 110. For example, in some embodiments, inner wall 1506 may be sized to fit snugly about and/or be physically connected with island 312 of gas channel plate 110 for supporting heat exchange fluid director plate 1502. Additionally or alternatively, in some embodiments, heat exchange fluid director plate 1502 may be supported by island 312 via retainer 1520 and/or cover plate 1504. By supporting heat exchange fluid director plate 1502 on island 312, floor ring 1510 of heat exchange fluid director plate 1502 may be spaced from heat exchange surface 1316 of gas channel plate 110 so that heat exchange fluid channel 1318 is formed above heat exchange structures 1312. In turn, heat exchange fluid flowing in heat exchange fluid channel 1318 may flow between and above heat exchange structures 1312 while flowing from inlet 1324 to outlet 1326, as shown in
Returning to
In some embodiments, heat exchange plenum assembly 1500 may include a flow restrictor positioned at outlet 1326 of heat exchange fluid channel 1318 and configured to adjust the flow of heat exchange fluid therein. For example,
In some embodiments, the height of flow restrictor ring 1524 may be adjusted to vary the heat exchange characteristics of heat exchange fluid channel 1318. For example, given constant inlet and outlet cross-sectional areas, increasing the height of flow restrictor ring 1524 may increase the residence time of the heat exchange fluid within the heat exchange fluid channel 1318, potentially varying the radial temperature profile of the gas channel plate. It will be appreciated that adjustments to the cross-sectional areas of the inlet and outlet may have a similar effect.
It will be appreciated that thermal management of showerhead volume 108 may be systematically controlled by suitable temperatures sensors and heater and/or heat exchanger controllers in some embodiments. Thus, a temperature of gas channel plate 110, showerhead 112, flow expansion structure 1002 and/or other portions of semiconductor process module 100 thermally coupled with showerhead volume 108 may be adjusted during substrate processing, potentially avoiding condensation and/or gas phase reactions of the process feed.
For example,
Temperature information collected by one or more temperature sensors 1604 may be provided to a thermal controller 1606 with which the temperature sensors 1604 are electrically connected. In some embodiments, thermal controller 1606 may include a heater controller for controlling heaters 1304 and/or a blower controller for controller blower 1402. In some embodiments, thermal controller 1606 may be included in system controller 202. In turn, thermal controller 1606 may adjust power supplied to heater 1304 via heater power connection 1306. Additionally or alternatively, in some embodiments, thermal controller 1606 may adjust operation of blower 1402 in response to temperature information provided by temperature sensors 1604. For example, thermal controller 1606 may turn blower 1402 off or on or vary the blower speed to adjust an amount of air delivered.
It will be understood that the hardware described herein may be used to adjust the temperature of the process feeds a showerhead volume in a semiconductor processing module and, in turn, deliver the process feeds from the showerhead volume to the substrate to process a substrate within the module.
Method 1700 includes, at 1702, supporting the substrate with a susceptor within the reactor and, at 1704, supplying process feed to the reactor via a showerhead positioned above the substrate. For example, in an ALD process, the process feed may be supplied to the reactor via the showerhead so that a suitable coverage of a surface active species derived from the process feed is generated on a process surface of the substrate.
At 1706, method 1700 includes adjusting a temperature of the process feed within a showerhead volume upstream of the showerhead by supplying a heat exchange fluid to a heat exchange fluid channel into which a plurality of heat exchange structures extend so that the heat exchange fluid flows between and above the heat exchange structures within the heat exchange fluid channel, the heat exchange structures being thermally coupled with the showerhead volume.
In some embodiments, adjusting the temperature at 1706 may include, at 1708, receiving a temperature of a heat exchange surface from which the heat exchange structures extend from a temperature sensor thermally coupled with the heat exchange surface. For example, process feed temperature information may be received from one or more temperature sensors. If a temperature of the process feed is judged to be too low relative to a predetermined temperature, action may be taken to raise the temperature of the heat exchange surface so that a temperature of the process feed within the showerhead may be raised. Alternatively, if a temperature of the heat exchange surface is judged to be too high relative to a predetermined temperature, a different action may be taken to lower the temperature of the heat exchange surface so that the temperature of the process feed within the showerhead volume may be lowered.
For example, in some embodiments, method 1700 may include, at 1710, adjusting a power supplied to a heating element included in the heat exchange surface. In a scenario where the heat exchange surface exceeds the predetermined temperature, the power supplied to the heater may be reduced. Alternatively, in a scenario where the heat exchange surface is less than the predetermined temperature, the power supplied to the heater may be increased. It will be appreciated that almost any suitable method of controlling the heater power may be employed without departing from the scope of the present disclosure, including control schemes that include one or more of proportional, derivative, and integral elements.
As another example, in some embodiments, method 1700 may include, at 1712, adjusting power supplied to a blower or pump configured to supply heat exchange fluid to the heat exchange surface. In a scenario where the heat exchange surface exceeds the predetermined temperature, the power supplied to the blower or pump may be reduced. Alternatively, in a scenario where the heat exchange surface is less than the predetermined temperature, the power supplied to the blower or pump may be increased. It will be appreciated that almost any suitable method of controlling the blower or pump power may be employed without departing from the scope of the present disclosure, including control schemes that include one or more of proportional, derivative, and integral elements.
In some embodiments, the heater and the blower or pump may be operated concurrently. For example, in one scenario, a blower may provide cool air continuously while a heater power is adjusted to vary heat input to the heat exchange surface. In another scenario, a heater may provide a continuous heat input while a blower power is adjusted to vary cooling provided to the heat exchange surface. In yet another scenario, both heater and blower power may be adjusted concurrently to control heating and cooling of the heat exchange surface.
In some embodiments, method 1700 may be performed by a system process controller comprising a data-holding subsystem comprising instructions executable by a logic subsystem to perform the processes described herein. Virtually any suitable system process controller may be employed without departing from the scope of the present disclosure.
For example,
System process controller 202 comprises a computing system that includes a data-holding subsystem and a logic subsystem. The data-holding subsystem may include one or more physical, non-transitory, devices configured to hold data and/or instructions executable by the logic subsystem to implement the methods and processes described herein. The logic subsystem may include one or more physical devices configured to execute one or more instructions stored in the data-holding subsystem. The logic subsystem may include one or more processors that are configured to execute software instructions.
In some embodiments, such instructions may control the execution of process recipes. Generally, a process recipe includes a sequential description of process parameters used to process a substrate, such parameters including time, temperature, pressure, and concentration, etc., as well as various parameters describing electrical, mechanical, and environmental aspects of the tool during substrate processing. The instructions may also control the execution of various maintenance recipes used during maintenance procedures and the like. In some embodiments, such instructions may be stored on removable computer-readable storage media, which may be used to store and/or transfer data and/or instructions executable to implement the methods and processes described herein. It will be appreciated that any suitable removable computer-readable storage media may be employed without departing from the scope of the present disclosure. Non-limiting examples include DVDs, CD-ROMs, floppy discs, and flash drives.
It is to be understood that the configurations and/or approaches described herein are exemplary in nature, and that these specific embodiments or examples are not to be considered in a limiting sense, because numerous variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Thus, the various acts illustrated may be performed in the sequence illustrated, in other sequences, or omitted in some cases.
The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts, and/or properties disclosed herein, as well as any and all equivalents thereof.
Claims
1. A semiconductor process module comprising a reactor, wherein the reactor comprises:
- a gas channel plate, the gas channel plate comprising:
- a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps;
- a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate; and
- a purge gas channel fluidly communicating with an ambient environment at a location between the ambient environment and a gasket disposed between a showerhead and the gas channel plate.
2. The semiconductor process module of claim 1, further comprising a process feed inlet for supplying a process feed to a showerhead volume formed between a diffusion surface disposed opposite the heat exchange surface and the showerhead sealably coupled to the gas channel plate.
3. The semiconductor process module of claim 2, where the process feed inlet includes a flow expansion structure upstream of the process feed inlet, the flow expansion structure being aligned with a centerline of the process feed inlet.
4. The semiconductor process module of claim 3, where the flow expansion structure includes a concentric conical expansion formed on an inner surface of the flow expansion structure.
5. The semiconductor process module of claim 2, further comprising a pulse valve manifold positioned upstream of the gas channel plate.
6. The semiconductor process module of claim 2, where the diffusion surface has a radially symmetric profile with respect to a centerline of the gas channel plate, the diffusion surface becoming closer to the showerhead as distance from a centerline of the gas channel plate increases.
7. The semiconductor process module of claim 6, where the radially symmetric profile includes a portion of the diffusion surface being disposed at an angle of between 0 and 5 degrees with respect to a reference plane defining a widest portion of the showerhead volume.
8. The semiconductor process module of claim 2, where the diffusion surface has a radially symmetric profile with respect to a centerline of the gas channel plate, where the radially symmetric profile includes a portion of the diffusion surface disposed at an angle of between 0 and 5 degrees with respect to a reference plane defining a widest portion of the showerhead volume, and where an upper surface of the showerhead facing the showerhead volume is spaced from the portion of the diffusion surface so that the portion of the diffusion surface and a respective portion of the upper surface remain a constant distance apart as distance from a centerline of the gas channel plate increases.
9. The semiconductor process module of claim 2, where the gas channel plate is sealably coupled to the showerhead by a gasket positioned within 20 mm of a showerhead distribution hole included in the showerhead.
10. The semiconductor process module of claim 1, further comprising: a heating element disposed in a spiral groove included in the heat exchange surface; a temperature controller electrically connected with the heating element for adjusting a temperature of the heating element in response to a temperature of the heat exchange surface.
11. The semiconductor process module of claim 10, where the showerhead includes a heating element independent from the heating element included in the heat exchange surface.
12. A semiconductor reactor comprising a gas channel plate, wherein the gas channel plate comprises:
- a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps;
- a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate; and
- a purge gas channel fluidly communicating with an ambient environment at a location between the ambient environment and a gasket disposed between a showerhead and the gas channel plate.
13. The semiconductor reactor of claim 12, further comprising a process feed inlet for supplying a process feed to a showerhead volume formed between a diffusion surface disposed opposite the heat exchange surface and the showerhead sealably coupled to the gas channel plate.
14. The semiconductor reactor of claim 13, where the process feed inlet includes a flow expansion structure upstream of the process feed inlet, the flow expansion structure being aligned with a centerline of the process feed inlet.
15. The semiconductor reactor of claim 14, where the flow expansion structure includes a concentric conical expansion formed on an inner surface of the flow expansion structure.
16. A processing tool comprising the semiconductor process module of claim 1.
17. A gas channel plate for a semiconductor process module, the gas channel plate comprising:
- a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps;
- a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate; and
- a purge gas channel fluidly communicating with an ambient environment at a location between the ambient environment and a gasket disposed between a showerhead and the gas channel plate.
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Type: Grant
Filed: Mar 17, 2015
Date of Patent: Feb 13, 2018
Patent Publication Number: 20150187568
Assignee: ASM America, Inc. (Phoenix, AZ)
Inventors: Fred Pettinger (Phoenix, AZ), Carl White (Gilbert, AZ), Dave Marquardt (Scottsdale, AZ), Sokol Ibrani (Scottsdale, AZ), Eric Shero (Phoenix, AZ), Todd Dunn (Cave Creek, AZ), Kyle Fondurulia (Phoenix, AZ), Mike Halpin (Scottsdale, AZ)
Primary Examiner: Jeffrie R Lund
Application Number: 14/660,755
International Classification: H01L 21/02 (20060101); C23C 16/455 (20060101); C23C 16/44 (20060101); H01J 37/32 (20060101);