Patents by Inventor Miki Egami

Miki Egami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180127627
    Abstract: Provided is a silica-based polishing particle which can polish and flatten the surface of a substrate at a sufficient polishing rate with generation of scratches prevented, and successfully prevents generation of particle residues on a substrate after polishing. A silica-based polishing particle with a three-dimensional polycondensation structure containing an alkoxy group, wherein the particle has an average particle diameter (d) of 5 to 300 nm, an aspect ratio of 1.00 or more and 1.20 or less, and a carbon content of 0.005% by mass or more and less than 0.50% by mass.
    Type: Application
    Filed: November 6, 2017
    Publication date: May 10, 2018
    Applicant: JGC CATALYSTS AND CHEMICALS LTD.
    Inventors: Mitsuaki KUMAZAWA, Miki EGAMI, Hirotada ARAKANE, Ryo MURAGUCHI, Toshiharu HIRAI
  • Publication number: 20160159654
    Abstract: Silica particles calcined in a calcination step are supplied in a swirling flow generated by a gas introduced in a disintegration container and disintegrated therein, whereby the silica particles can be easily disintegrated and there can be obtained disintegrated silica particles having both low hygroscopicity and high dispersibility in resin. In addition, the introduction of dehumidified air (gas) during the disintegration reduces hygroscopicity and greatly improves dispersibility in resin. Furthermore, performing heating treatment (calcination) again after the disintegration causes the surface modification of the disintegrated silica particles, greatly improving hygroscopicity and dispersibility in resin. The resin composition obtained in this manner including silica particles provides good injectability and filterability when used for an underfill material for semiconductors and an in-plane spacer or sealing spacer of liquid crystal displays.
    Type: Application
    Filed: August 1, 2014
    Publication date: June 9, 2016
    Inventors: Ryo Muraguchi, Miki Egami, Mitsuaki Kumazawa, Masanobu Taniguchi, Tsuguo Koyanagi, Michio Komatsu, Kazutaka Egami
  • Patent number: 8686101
    Abstract: A coating liquid for forming a low dielectric constant amorphous silica-based coating film with a dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, and also having a smooth surface with an excellent hydrophobicity. The coating liquid contains (1) a silicon compound obtained by hydrolyzing bis(trialkoxysilyl)alkane (BTASA) and alkoxysilane (AS) in the presence of tetraalkylammoniumhydroxide (TAAOH), or (2) a silicon compound obtained by hydrolyzing bis(trialkoxysilyl)alkane (BTASA), alkoxysilane (AS) and tetraalkylorthosilicate (TAOS) in the presence of tetraalkylammoniumhydroxide (TAAOH).
    Type: Grant
    Filed: December 15, 2006
    Date of Patent: April 1, 2014
    Assignee: JGC Catalysts and Chemicals Ltd.
    Inventors: Miki Egami, Hiroki Arao, Akira Nakashima, Michio Komatsu
  • Publication number: 20130109072
    Abstract: A support for enzyme immobilization is described, which is for immobilizing enzymes of various molecular sizes and also for, due to the modification of the surface silanol groups of porous silica particles, for immobilizing various kinds of enzymes, and enables the design of an immobilized enzyme, which exhibits an activity equivalent to that of the corresponding non-immobilized enzyme and withstands repeated use. A method for producing the support is also described. The support includes porous silica particles having an interparticle void structure therein, characterized in that the porous silica particles have a specific average particle size, a specific surface area, a specific pore volume, a specific pore size distribution and a specific porosity and have a substituent containing an organic group or an amino group on the surface thereof. An immobilized protein obtained by immobilizing a protein on the above support is also described.
    Type: Application
    Filed: June 8, 2011
    Publication date: May 2, 2013
    Applicants: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, JGC CORPORATION
    Inventors: Tatsuo Tsunoda, Takayuki Nara, Seigo Ono, Chisato Sekikawa, Fujio Mizukami, Shuzo Kojima, Naoki Tahara, Hideaki Togashi, Miki Egami
  • Patent number: 8227028
    Abstract: A method of forming on a substrate an amorphous silica-based coating film having a low dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, which comprises, as a typical one, the steps of; (a) coating on the substrate a liquid composition containing hydrolysate of an organic silicon compound or compounds hydrolyzed in the presence of tetraalkylammonium hydroxide (TAAOH); (b) setting the substrate in a chamber and then drying a coating film formed on the substrate at a temperature in the range from 25 to 340° C.; (c) heating the coating film at a temperature in the range from 105 to 450° C. with introduction of a superheated steam having such a temperature into the chamber, and (d) curing the coating film at a temperature in the range from 350 to 450° C. with introduction of a nitrogen gas into the chamber.
    Type: Grant
    Filed: July 11, 2007
    Date of Patent: July 24, 2012
    Assignee: JGC Catalysts and Chemicals Ltd.
    Inventors: Miki Egami, Akira Nakashima, Michio Komatsu
  • Patent number: 8062414
    Abstract: The present invention relates to a coating liquid for forming an amorphous silica-based coating film with a low dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of preparing the same. The coating liquid may contain a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), or may contain a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl ortho silicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), mixing the reaction product with specific alkoxysilane or a hydrolysate or a partial hydrolysate thereof, and hydrolyzing all or a portion of the mixture according to the necessity. In addition, the coating liquid is prepared by mixing components described above at a specific ratio and under specific process conditions.
    Type: Grant
    Filed: October 27, 2003
    Date of Patent: November 22, 2011
    Assignees: JGC Catalysts and Chemicals Ltd., Fujitsu Limited
    Inventors: Akira Nakashima, Miki Egami, Michio Komatsu, Yoshihiro Nakata, Ei Yano, Katsumi Suzuki
  • Patent number: 7998567
    Abstract: Disclosed is a coating liquid for forming a protective film having high film strength and a low specific dielectric constant for semiconductor processing, and a method for preparing the coating liquid. The coating liquid is a liquid composition comprising (a) silicon compound obtained by hydrolyzing tetraalkyl orthosilicate (TAOS) and alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, or a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl orthosilicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, mixing the hydrolyzed or partially hydrolyzed product with alkoxysilane (AS) or a hydrolyzed or partially hydrolyzed product thereof, and hydrolyzing all or a portion of the mixture, (b) an organic solvent, and (c) water. The coating liquid is characterized in that a quantity of water contained in the liquid composition is in the range from 35 to 65% by weight.
    Type: Grant
    Filed: October 11, 2005
    Date of Patent: August 16, 2011
    Assignee: JGC Catalysts and Chemicals Ltd.
    Inventors: Miki Egami, Hiroki Arao, Akira Nakashima, Michio Komatsu
  • Publication number: 20100003181
    Abstract: A method of forming on a substrate an amorphous silica-based coating film having a low dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, which comprises, as a typical one, the steps of; (a) coating on the substrate a liquid composition containing hydrolysate of an organic silicon compound or compounds hydrolyzed in the presence of tetraalkylammonium hydroxide (TAAOH); (b) setting the substrate in a chamber and then drying a coating film formed on the substrate at a temperature in the range from 25 to 340° C.; (c) heating the coating film at a temperature in the range from 105 to 450° C. with introduction of a superheated steam having such a temperature into the chamber, and (d) curing the coating film at a temperature in the range from 350 to 450° C. with introduction of a nitrogen gas into the chamber.
    Type: Application
    Filed: July 11, 2007
    Publication date: January 7, 2010
    Applicant: JGC CATALYSTS AND CHEMICALS LTD.
    Inventors: Miki Egami, Akira Nakashima, Michio Komatsu
  • Publication number: 20090061199
    Abstract: Disclosed is a coating liquid for forming a protective film having high film strength and a low specific dielectric constant for semiconductor processing, and a method for preparing the coating liquid. The coating liquid is a liquid composition comprising (a) silicon compound obtained by hydrolyzing tetraalkyl orthosilicate (TAOS) and alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, or a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl orthosilicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, mixing the hydrolyzed or partially hydrolyzed product with alkoxysilane (AS) or a hydrolyzed or partially hydrolyzed product thereof, and hydrolyzing all or a portion of the mixture, (b) an organic solvent, and (c) water. The coating liquid is characterized in that a quantity of water contained in the liquid composition is in the range from 35 to 65% by weight.
    Type: Application
    Filed: October 11, 2005
    Publication date: March 5, 2009
    Inventors: Miki Egami, Hiroki Arao, Akira Nakashima, Michio Komatsu
  • Publication number: 20090025609
    Abstract: A coating liquid for forming a low dielectric constant amorphous silica-based coating film with a dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, and also having a smooth surface with an excellent hydrophobicity. The coating liquid contains (1) a silicon compound obtained by hydrolyzing bis(trialcoxysilyl)alkane (BTASA) and alcoxysilane (AS) in the presence of tetraalkylammoniumhydroxide (TAAOH), or (2) a silicon compound obtained by hydrolyzing bis(trialcoxysilyl)alkane (BTASA), alcoxysilane (AS) and tetraalkylorthosilicate (TAOS) in the presence of tetraalkylammoniumhydroxide (TAAOH).
    Type: Application
    Filed: December 15, 2006
    Publication date: January 29, 2009
    Inventors: Miki Egami, Hiroki Arao, Akira Nakashima, Michio Komatsu
  • Publication number: 20080011987
    Abstract: Disclosed is a coating liquid for forming an amorphous silica-based coating film having a low dielectric constant of 3.0 or below and low leakage current, and a method for preparing the coating liquid. The coating liquid is a liquid composition comprising (a) silicon compound obtained by hydrolyzing tetraalkyl orthosilicate (TAOS) and alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, or a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl orthosilicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, mixing the hydrolyzed or partially hydrolyzed product with alkoxysilane (AS) or a hydrolyzed or partially hydrolyzed product thereof, and hydrolyzing all or a portion of the mixture, (b) an organic solvent, and (c) water. The coating liquid is characterized in that a quantity of water contained in the liquid composition is in the range from 30 to 60% by weight.
    Type: Application
    Filed: October 11, 2005
    Publication date: January 17, 2008
    Applicant: CATALYSTS & CHEMICALS INDUSTRIES CO., LTD
    Inventors: Hiroki Arao, Miki Egami, Akira Nakashima, Michio Komatsu
  • Patent number: 7232769
    Abstract: The present invention relates to an amorphous silica-based coating film with a low specific dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of forming the same. A liquid composition containing a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) is prepared. The liquid composition is then applied on a substrate, heated and cured to obtain a coating film. The coating film obtained as described has a smooth surface and also has specific micropores therein.
    Type: Grant
    Filed: October 27, 2003
    Date of Patent: June 19, 2007
    Assignees: Catalysts & Chemicals Industries Co., Ltd., Fujitsu Limited
    Inventors: Akira Nakashima, Miki Egami, Michio Komatsu, Yoshihiro Nakata, Ei Yano, Katsumi Suzuki
  • Publication number: 20060084277
    Abstract: The present invention relates to an amorphous silica-based coating film with a low specific dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of forming the same. A liquid composition containing a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) is prepared. The liquid composition is then applied on a substrate, heated and cured to obtain a coating film. The coating film obtained as described has a smooth surface and also has specific micropores therein.
    Type: Application
    Filed: October 27, 2003
    Publication date: April 20, 2006
    Applicants: Catalysts & Chemicals Industries Co., Ltd, Fujitsu Limited
    Inventors: Akira Nakashima, Miki Egami, Michio Komatsu, Yoshihiro Nakata, Ei Yano, Katsumi Suzuki
  • Patent number: 6716773
    Abstract: A process for producing semiconductor substrates with a coating film having excellent chemical resistance with high yield and excellent production reliability without any development of cracks and any generation or collection of foreign matter resulting from a projected portion of the coating film, which includes the steps of: (a) forming a coating film by coating an insulating film-forming coating liquid on a substrate mounted on a rotating disc of a spin coater according to a spin coating method; and (b) removing the projected portion of the coating film formed at a periphery of the substrate by ejecting a solvent through a nozzle moving from any point on a line drawn between the periphery edge and a center of the substrate toward the periphery edge while rotating the substrate.
    Type: Grant
    Filed: September 19, 2002
    Date of Patent: April 6, 2004
    Assignee: Catalysts & Chemicals Industries Co., Ltd.
    Inventors: Miki Egami, Ryo Muraguchi
  • Patent number: 6599846
    Abstract: The present invention provides a method for forming a silica-containing film with a low-dielectric constant of 3 or less on a semiconductor substrate steadily, which comprises steps of (a) applying a coating liquid for forming the silica-containing film with the low-dielectric constant onto the semiconductor substrate, (b) heating the thus coated film at 50 to 350° C., and then (c) curing the thus treated film at 350 to 450° C. in an inert-gas atmosphere containing 500 to 15,000 ppm by volume of oxygen, and also provides a semiconductor substrate having a silica-containing film formed by the above method. The above step (b) for the thermal treatment is preferably conducted at 150 to 350° C. for 1 to 3 minutes in an air atmosphere. Also, the above curing step (c) is preferably conducted by placing the semiconductor substrate on a hot plate kept at 350 to 450° C.
    Type: Grant
    Filed: August 28, 2001
    Date of Patent: July 29, 2003
    Assignee: Catalysts & Chemicals Industries Co., Ltd.
    Inventors: Michio Komatsu, Akira Nakashima, Miki Egami, Ryo Muraguchi
  • Publication number: 20030062599
    Abstract: A process for producing semiconductor substrates with a coating film having an excellent chemical resistance with a high yield and an excellent production reliability without any development of cracks and any generation of foreign matters due to a projected portion of the coating film is described, which includes the steps of:
    Type: Application
    Filed: September 19, 2002
    Publication date: April 3, 2003
    Applicant: CATALYSTS & CHEMICALS INDUSTRIES CO., LTD.
    Inventors: Miki Egami, Ryo Muraguchi
  • Publication number: 20020187652
    Abstract: The present invention provides a method for forming a silica-containing film with a low-dielectric constant of 3 or less on a semiconductor substrate steadily, which comprises steps of (a) applying a coating liquid for forming the silica-containing film with the low-dielectric constant onto the semiconductor substrate, (b) heating the thus coated film at 50 to 350° C., and then (c) curing the thus treated film at 350 to 450° C. in an inert-gas atmosphere containing 500 to 15,000 ppm by volume of oxygen, and also provides a semiconductor substrate having a silica-containing film formed by the above method.
    Type: Application
    Filed: August 28, 2001
    Publication date: December 12, 2002
    Inventors: Michio Komatsu, Akira Nakashima, Miki Egami, Ryo Muraguchi
  • Patent number: 6451436
    Abstract: A coating liquid for forming a silica-containing film with a low-dielectric constant, which enables the formation of a low-density film having a dielectric constant as low as 3 or less and being excellent not only in resistance of oxygen plasma and in process adaptation but also in adhesion to a substrate and in film strength, is provided. A substrate coated with the silica-containing film having the above characteristics, which is obtained by the use of the above coating liquid, is further provided.
    Type: Grant
    Filed: May 24, 2000
    Date of Patent: September 17, 2002
    Assignee: Catalysts & Chemicals Industries Co., Ltd.
    Inventors: Michio Komatsu, Akira Nakashima, Miki Egami
  • Patent number: 6261357
    Abstract: A coating liquid for forming a low-permittivity silica film, which is capable of forming an insulating film that has a relative permittivity as low as up to 3 and is excellent in adherence to a substrate surface, mechanical properties, chemical resistance such as alkali resistance and also crack resistance, and which is capable of smoothing the irregularities of a substrate surface to a satisfactorily high degree, is provided. Further, a substrate comprising this low-permittivity silica coating film is provided.
    Type: Grant
    Filed: September 23, 1998
    Date of Patent: July 17, 2001
    Assignees: Catalysts & Chemicals Industries Co., Ltd., Fujitsu Limited
    Inventors: Miki Egami, Akira Nakashima, Michio Komatsu