Abstract: An exhaust gas purification filter is configured to he disposed in an exhaust passage in a gasoline engine. The exhaust gas purification filter includes partition walls including a plurality of pores, a plurality of cells partitioned by the partition walls, and sealing portions alternately sealing ends of a plurality of the cells in the exhaust gas purification filter. The partition walls each have an average pore diameter of more than 16 ?m and less than 21 ?m, and have a ratio of an average surface opening diameter of the pores in a partition wall surface to the average pore diameter of the partition wall of 0.66 or more and 0.94 or less.

Abstract: In a manufacturing method for manufacturing a dispersion body, a plurality of types of solid particles, water, and a liquid dispersant are mixed. In the manufacturing method, at least two types of the solid particles and at least one type of the dispersant that are selected based on a material type selection method are used, and at least an optimal amount of the dispersant that is determined based on an optimal amount determination method is added and mixed. The material type selection method is based on a Hansen solubility parameter distance to water, Hansen spheres of the solid particles, and a Hansen sphere of the dispersant.

Abstract: In a manufacturing method for manufacturing a dispersion body, a plurality of types of solid particles, water, and a liquid other than water are mixed. The solid particles and the liquid are selected such that Hansen spheres of at least two types of the solid particles and a Hansen sphere of at least one type of the liquid mutually overlap, and a Hansen solubility parameter distance to water of at least one type of the solid particles of which the Hansen spheres overlap that of the liquid is greatest among all solid particles used in manufacturing of the dispersion body, and used to manufacture the dispersion body.

Abstract: In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.

Abstract: An exhaust gas purification filter is configured to he disposed in an exhaust passage in a gasoline engine. The exhaust gas purification filter includes partition walls including a plurality of pores, a plurality of cells partitioned by the partition walls, and sealing portions alternately sealing ends of a plurality of the cells in the exhaust gas purification filter. The partition walls each have an average pore diameter of more than 16 ?m and less than 21 ?m, and have a ratio of an average surface opening diameter of the pores in a partition wall surface to the average pore diameter of the partition wall of 0.66 or more and 0.94 or less.

Abstract: A base plate (1) includes a fixed surface and a radiating surface which is a surface opposite to the fixed surface. An insulating substrate (3) is bonded to the fixed surface of the base plate (1). Conductive patterns (4,5) are provided on the insulating substrate (3). Semiconductor chips (7,8) are bonded to the conductive pattern (4). An Al wire (12) connects top surfaces of the semiconductor chip (8) to the conductive pattern (5). The insulating substrate (3), the conductive patterns (4 ,5), the semiconductor chips (7 to 10) and the Al wires (11 to 13) are sealed with resin (16). The base plate (1) includes a metal part (19) and a reinforcing member (20) provided in the metal part (19). A Young's modulus of the reinforcing member (20) is higher than a Youngs modulus of the metal part (19).

Abstract: In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.

Abstract: An object is to provide a power module in which adhesion of a sealing resin is sufficient and which is highly reliable. The power module includes: an insulative board in which a pattern of a conductor layer is formed on a ceramic plate; power semiconductor elements placed on the insulative board; lead frames each in a plate shape connecting from electrodes of the power semiconductor elements to screw-fastening terminal portions; and a sealing resin portion that seals connection portions between the power semiconductor elements and the lead frames, and regions around the connection portions; wherein, in the lead frames, opening portions are formed at positions where each of the lead frames at least partly overlaps, in planar view, with a portion of the insulative board on which the conductor layer is not formed.

Abstract: An exhaust gas purification filter has a honeycomb structure body and upstream side plug members. Cell holes are composed of inlet cell holes and outlet cell holes. In a central area and an outer peripheral area, a gas flow channel cross sectional area Sc1 of the outlet cell holes is larger than a gas flow channel cross sectional area So1 of the inlet cell holes, where Sc1<So1. A first ratio Rc is smaller than a second ratio Ro. The first ratio Rc is a ratio of Sc1 and Sc2. The second ratio Ro is a ratio of So1 to So2. In a first direction X and a second direction Y, the inlet cell holes and the outlet cell holes are alternately arranged, and the cell walls in the central area are larger in thickness than the cell walls in the outer peripheral area.

Abstract: In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.

Abstract: An exhaust gas purification filter comprises: a casing; a porous dividing wall which partitions the inside of the casing into a honeycomb shape; and cells enclosed by the dividing wall. A pore path length distribution of the dividing wall, when expressed by a frequency histogram per 10 ?m of the pore path length of the dividing wall, has an integrated frequency of at least 58%. The integrated frequency is a maximum value of a value obtained by summing the frequencies of a total of three adjacent levels which include the maximum peak frequency. The dividing wall preferably has a gas permeability coefficient k of at least 0.8×10?12 m2.

Abstract: In semiconductor device, a substrate unit includes an insulating substrate, a first conductor substrate and a second conductor substrate which are disposed on one main surface of the insulating substrate and spaced apart from each other, and a third conductor substrate which is disposed on the other main surface opposite to the one main surface of the insulating substrate. A terminal is connected to a surface of a semiconductor element opposite to the first conductor substrate. The terminal extends from a region above the semiconductor element to a region above the second conductor substrate while being connected to the second conductor substrate. At least a part of the terminal, the substrate unit and the semiconductor element is sealed by a resin. The third conductor substrate is exposed from the resin.

Abstract: A semiconductor device includes a semiconductor element having a front electrode, an electrode plate having an area larger than the front electrode of the semiconductor element in a two-dimensional view and made of aluminum or aluminum alloy, and a metal member having a joint surface joined to the front electrode of the semiconductor element with solder, having an area smaller than the front electrode of the semiconductor element in a two-dimensional view, made of a metal different from the electrode plate, and fastened to the electrode plate to electrically connect the front electrode of the semiconductor element to the electrode plate.

Abstract: Herein provided are: a ceramic board; a semiconductor element for electric power, on one surface of which an electrode is formed, and the other surface of which is bonded to the ceramic board; a lead terminal, one end side of which is bonded to the electrode, and the other end side of which is to be electrically connected to an outside thereof; and a sealing member by which the semiconductor element for electric power is sealed together with a part, in the lead terminal, bonded to the electrode; wherein, near an end in said one end side of the lead terminal, an inclined surface is formed which becomes farther from the circuit board as it becomes closer to the end.

Abstract: An exhaust gas purification filter comprises: a casing; a porous dividing wall which partitions the inside of the casing into a honeycomb shape; and cells enclosed by the dividing wall. A pore path length distribution of the dividing wall, when expressed by a frequency histogram per 10 ?m of the pore path length of the dividing wall, has an integrated frequency of at least 58%. The integrated frequency is a maximum value of a value obtained by summing the frequencies of a total of three adjacent levels which include the maximum peak frequency. The dividing wall preferably has a gas permeability coefficient k of at least 0.8×10?12m2.

Abstract: An object is to provide a power module in which adhesion of a sealing resin is sufficient and which is highly reliable. The power module includes: an insulative board in which a pattern of a conductor layer is formed on a ceramic plate; power semiconductor elements placed on the insulative board; lead frames each in a plate shape connecting from electrodes of the power semiconductor elements to screw-fastening terminal portions; and a sealing resin portion that seals connection portions between the power semiconductor elements and the lead frames, and regions around the connection portions; wherein, in the lead frames, opening portions are formed at positions where each of the lead frames at least partly overlaps, in planar view, with a portion of the insulative board on which the conductor layer is not formed.

Abstract: An exhaust gas filter purifies exhaust gas containing particulate matter emitted from an engine. The filter has cell walls and cells surrounded by the cell walls. Through pores formed in the cell walls, adjacent cells are communicated. The cells have open cells opening along an axial direction of the filter, and plugged cells. An upstream end part of the plugged cell is plugged by a plug member. On a cross section perpendicular to the axial direction, a flow-passage sectional area of the plugged cells is larger than a flow-passage sectional area of the open cells. A total length of the filter is not less than a first standard value and is not more than a critical length Lm determined by respective predetermined equations.

Abstract: The object is to provide a technology capable of enhancing a cooling performance of a semiconductor device. The semiconductor device includes a fin portion including a plurality of projecting portions that are connected to a lower surface of a heat-transfer base plate, a cooling member covering the fin portion and being connected to an inlet through which coolant to flow toward the fin portion flows in and an outlet through which coolant flowing from the fin portion flows out, and a header being a water storage chamber that is provided between the inlet and the fin portion and is partitioned from the fin portion so as to be capable of allowing coolant to flow through from the inlet to the fin portion.

Abstract: An exhaust gas purification filter collects PM contained in and purifies exhaust gas emitted from a gasoline direct injection engine. The exhaust gas purification filter has a honeycomb structural body which has a plurality of cells, partition walls and plug members. Each of the cells is surrounded by the partition walls. An opening section of one end of each of the cells is plugged by a plug member. The plug members satisfies a relationship of L/D?50 and L?3, where L is an average length (mm) of the plug members and D is an average pore size mm of the plug members. The honeycomb structural body and the plug members are made of cordierite. The cordierite contains silica, talc, kaolin, alumina and/or aluminum hydroxide, etc.

Abstract: A semiconductor device includes a semiconductor element having a front electrode, an electrode plate having an area larger than the front electrode of the semiconductor element in a two-dimensional view and made of aluminum or aluminum alloy, and a metal member having a joint surface joined to the front electrode of the semiconductor element with solder, having an area smaller than the front electrode of the semiconductor element in a two-dimensional view, made of a metal different from the electrode plate, and fastened to the electrode plate to electrically connect the front electrode of the semiconductor element to the electrode plate.