Abstract: An electroconductive sheet comprising a substrate layer of a thermoplastic resin comprising an acrylonitrile-butadiene-styrene copolymer type resin and/or a polystyrene type resin and having laminated on at least one side of the substrate layer, a surface layer of an electroconductive resin composition comprising a polycarbonate type resin and from 5 to 50 wt % of carbon black.

Abstract: A heat-sealing film having a haze of not more than 30% and having a sealant layer made of a resin composition which comprises from 50 to 100 wt % of the total of the following components (a) to (c): (a) from 5 to 50 wt % of a block copolymer of from 50 to 95 wt % of a styrene-type hydrocarbon and from 5 to 50 wt % of a conjugated diene-type hydrocarbon, (b) from 5 to 50 wt % of an ethylene/?-olefin random copolymer, and (c) from 5 to 70 wt % of a block copolymer of from 10 to 50 wt % of a styrene-type hydrocarbon and from 50 to 90 wt % of a conjugated diene-type hydrocarbon, and (d) from 0 to 50 wt % of an impact-resistant polystyrene.

Abstract: A heat-stealing film having a baze of not more than 30% and having a sealant layer made of a resin composition which comprises from 50 to 100 wt % of the total of the following components (a) to (c); (a) from 5 to 50 wt % of a block copolymer of from 50 to 95 wt % of a styrene-type hydrocarbon and from 5 to 50 wt % of a conjugated diene-type hydrocarbon, (b) from 5 to 50 wt % of an ethylene/?-olefin random copolymer, and (c) from 5 to 70 wt % of a block copolymer of from 10 to 50 wt % of a styrene-type hydrocarbon and from 50 to 90 wt % of a conjugated diene-type hydrocarbon, and (d) from 0 to 50 wt % of and impact-resistant polystyrene.

Abstract: The present invention provides a new antistatic method and its application to members. The present invention is an antistatic method featured to mount multiple resin based composites with different triboelectric series order on the surface and members featured to have multiple resin based composites with different triboelectric series order on the surface. The members are resin based sheets, resin based films or resin molded materials. The resin based composites are adhesives, bonding agents, printing ink or paint.

Abstract: A surface protection film which comprises a substrate layer and an adhesive layer, and of which the electrostatic charge by peeling from an adherend is from +0.01 to −0.01 nC/mm2.

Abstract: A technique capable of preventing breakage of a semiconductor wafer in a single-wafer RTP apparatus is provided. Open-loop control is made in a temperature rising process, in which the temperature of the semiconductor wafer is 500° C. or lower, and a revolution speed of the semiconductor wafer is relatively reduced to 100 rpm or lower even if the bowing of the semiconductor wafer occurs. Therefore, a centrifugal force exerted on the semiconductor wafer is reduced, whereby it becomes possible to prevent the semiconductor wafer from dropping from a stage of the single-wafer RTP apparatus. Additionally, closed-loop control is made in the temperature rising process, in which the temperature of the semiconductor wafer is higher than 500° C., and in a main treatment process, and further the revolution speed of the semiconductor wafer is relatively increased.

Abstract: An electroconductive sheet comprising a substrate layer of a thermoplastic resin comprising an acrylonitrile-butadiene-styrene copolymer type resin and/or a polystyrene type resin and having laminated on at least one side of the substrate layer, a surface layer of an electroconductive resin composition comprising a polycarbonate type resin and from 5 to 50 wt % of carbon black.

Abstract: An electroconductive sheet comprising a substrate layer of a thermoplastic resin comprising an acrylonitrile-butadiene-styrene copolymer type resin and/or a polystyrene type resin and having laminated on at least one side of the substrate layer, a surface layer of an electroconductive resin composition comprising a polycarbonate type resin and from 5 to 50 wt % of carbon black.

Abstract: In order to prevent static electricity impairment of an electronic component, a layer at the surface of a container to be in contact with an electronic component is one having a relatively high surface resistivity, a layer having a higher electrical conductivity than that is laminated below it, and the surface resistivity of the layer at the surface is higher than that of the layer below it. It is considered that in an electronic component packaging container having such a constitution, static electricity electrified on an electronic component is gradually discharged from the electronic component to the surface of the electronic component packaging container without sudden discharge, thus preventing the static electricity impairment. The surface layer preferably comprises a material close to the electronic component in the series of frictional electrification.

Abstract: Disclosed is a technique capable of preventing the breakage of a semiconductor wafer with a diameter of 300 mm in an RTP equipment. When the RTP process composed of a heating process, a main process for maintaining the predetermined final temperature for a predetermined time, and a cooling process is performed to a semiconductor wafer with a diameter of 300 mm, the temperature of the semiconductor wafer is measured by the use of pyrometers, an open-loop control in which the difference in the in-plane temperature of a semiconductor wafer is controlled within 90° C. is performed in the heating process at a temperature lower than 500° C., and a closed-loop control is performed in the heating process at a temperature of 500° C. or higher and in the main process. In this manner, it is possible to reduce the warp of the semiconductor wafer and to prevent the breakage thereof.

Abstract: In order to prevent impairment due to static electricity in a container for an electronic component, generation of static electricity itself has to be inhibited. The peeling static electrification amount of a cover tape should be from −9 to +9 nC when the cover tape has a surface resistivity of at least 1011 &OHgr;, or it should be from −3 to +3 nC when the cover tape has a surface resistivity of less than 1011 &OHgr;. In a carrier tape body, a side of a cover tape which faces an electronic component should have a composition containing a resin on the positive polarity side and a resin on the negative polarity side relative to a side of the electronic component which faces the cover tape in the series of frictional electrification. For the surface of a container to be in contact with an electronic component, a material which is less likely to generate static electricity should be employed.

Abstract: It is to provide an embossed carrier tape and a sheet for an embossed carrier tape suitable for high-speed mounting.

Abstract: An electroconductive sheet comprising a substrate layer of a thermoplastic resin comprising an acrylonitrile-butadiene-styrene copolymer type resin and/or a polystyrene type resin and having laminated on at least one side of the substrate layer, a surface layer of an electroconductive resin composition comprising a polycarbonate type resin and from 5 to 50 wt % of carbon black.

Abstract: A batch-processing type semiconductor-manufacturing device includes a cylindrical reaction chamber with its upper end closed and its bottom end open, a substrate-supporting boat loading multiple substrates, which are inserted within the reaction chamber, and an injector for spraying a reaction gas to the substrates, which injector is provided parallel to the substrate-supporting boat within the reaction chamber. The injector is supported by an injector holder, and both the injector and the injector holder are fitted by a male-female fitting structure.

Abstract: An electroconductive sheet comprising a substrate layer of a thermoplastic resin comprising an acrylonitrile-butadiene-styrene copolymer type resin and/or a polystyrene type resin and having laminated on at least one side of the substrate layer, a surface layer of an electroconductive resin composition comprising a polycarbonate type resin and from 5 to 50 wt % of carbon black.

Abstract: A latch for an oven comprises a support plate mounted within the oven. A bracket member is pivotably supported on the support plate. A handle is fixed to the bracket member and is manually operable to move the latch between the latching and unlatching positions. A latch arm is movably supported on the support plate and connected to the bracket member to be moved between the latching and unlatching positions in accordance with the movement of the bracket member. A spring is connected between the support plate and the bracket member for biasing the bracket member toward the latching or unlatching position, selectively. First and second arcuate guide projections are integrally formed with the support plate beneath the bracket member for guiding the bracket member.

Abstract: A batch-processing type semiconductor-manufacturing device includes a cylindrical reaction chamber with its upper end closed and its bottom end open, a substrate-supporting boat loading multiple substrates, which are inserted within the reaction chamber, and an injector for spraying a reaction gas to the substrates, which injector is provided parallel to the substrate-supporting boat within the reaction chamber. The injector is supported by an injector holder, and both the injector and the injector holder are fitted by a male-female fitting structure.

Abstract: A DVS-BCB polymer film is grown by heating a divinyl siloxane bisbenzocyclobutene (DVS-BCB) monomer in a vaporization controller with continuously supplying; supplying a carrier gas and maintaining a partial pressure of the DVS-BCB monomer at a state lower than a saturated vapor pressure, thereby to vaporize the monomer; transporting the carrier gas containing the DVS-BCB monomer from the vaporization controller to an evacuated reaction chamber; and spraying the gas on the heated surface of a substrate in the reaction chamber.

Abstract: A substrate-holding apparatus for holding a semiconductor substrate in a semiconductor processor is characterized in that the apparatus includes a mount block made of an aluminum alloy wrought product and having a mount surface for mounting a semiconductor thereon, a heating block with a heater body embedded therein for heating the semiconductor substrate, and a shield member made of an aluminum alloy wrought product for housing the heating block. The mount plate is securely attached to the heating block by brazing or with bolts.

Abstract: A substrate-holding apparatus for holding a semiconductor substrate in a semiconductor processor is characterized in that the apparatus includes a mount block made of, e.g., aluminum nitrate with a high-frequency electrode embedded therein and a heating block made of, e.g., an aluminum alloy with a heating body embedded therein. The mount block is tightly attached to the heating block by engaging the bottom surface of the mount block with the top surface of the heating block, for example, by using a latching mechanism.