Patents by Inventor Milos Toth
Milos Toth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120112062Abstract: An environmental cell for a charged particle beam system allows relative motion between the cell mounted on an X-Y stage and the optical axis of the focusing column, thereby eliminating the need for a sub-stage within the cell. A flexible cell configuration, such as a retractable lid, permits a variety of processes, including beam-induced and thermally-induced processes. Photon yield spectroscopy performed in a charged particle beam system and using gas cascade amplification of the photoelectrons allows analysis of material in the cell and monitoring of processing in the cell. Luminescence analysis can be also performed using a retractable minor.Type: ApplicationFiled: November 9, 2010Publication date: May 10, 2012Applicant: FEI COMPANYInventors: Libor Novak, Marek Uncovsky, Milos Toth, Martin Cafourek, William Parker, Marcus Straw, Mark Emerson
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Publication number: 20120103945Abstract: Laser processing is enhanced by using endpointing or by using a charged particle beam together with a laser. End-pointing uses emissions, such as photons, electrons, ions, or neutral particles, from the substrate to determine when the material under the laser has changed or is about to change. Material removed from the sample can be deflected to avoid deposition onto the laser optics.Type: ApplicationFiled: July 8, 2009Publication date: May 3, 2012Applicant: FEI COMPANYInventors: Marcus Straw, David H. Narum, Milos Toth, Mark Utlaut, Guido Knippels, Gerardus Nicolaas Van Veen
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Patent number: 8168961Abstract: An improved method for substrate micromachining. Preferred embodiments of the present invention provide improved methods for the utilization of charged particle beam masking and laser ablation. A combination of the advantages of charged particle beam mask fabrication and ultra short pulse laser ablation are used to significantly reduce substrate processing time and improve lateral resolution and aspect ratio of features machined by laser ablation to preferably smaller than the diffraction limit of the machining laser.Type: GrantFiled: November 26, 2008Date of Patent: May 1, 2012Assignee: FEI CompanyInventors: Marcus Straw, Milos Toth, Steven Randolph, Michael Lysaght, Mark Utlaut
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Publication number: 20110115129Abstract: A charged particle beam and a laser beam are used together to micromachine a substrate. A first beam alters the state of a region of the work piece, and the second beam removes material whose state was altered. In one embodiment, an ion beam can create photon absorbing defects to lower the local ablation threshold, allowing the laser beam to remove material in a region defined by the ion beam. The combination of laser beam and charged particle beam allows the creation of features similar in size to the charged particle beam spot size, at milling rates greater than charged particle processing because of the increased energy provided by the laser beam.Type: ApplicationFiled: July 9, 2009Publication date: May 19, 2011Applicant: FEI COMPANYInventors: Marcus Straw, Amin Samsavar, Milos Toth, Mark Utlaut
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Publication number: 20110070381Abstract: A system for beam-induced deposition or etching, in which a charged particle or laser beam can be directed to a work piece within a single vacuum chamber, either normally incident or at an angle. Simultaneously with beam illumination of the work piece, a deposition or etch precursor gas is co-injected or premixed with a purification compound and (optionally) a carrier gas prior to injection into the process chamber. The beam decomposes the deposition precursor gas to deposit a film only in areas illuminated by the beam, or decomposes the etch precursor gas to etch a film only in areas illuminated by the beam. Undesired impurities such as carbon in the deposited film are removed during film growth by interaction with adsorbed species on the work piece surface that are generated by interaction of the beam with adsorbed molecules of the film purification compound. Alternatively, the film purification compound can be used to inhibit oxidation of the material etched by the etch precursor gas.Type: ApplicationFiled: September 23, 2009Publication date: March 24, 2011Applicant: FEI COMPANYInventors: Milos Toth, Charlene Lobo, Steven Randolph, Clive Chandler
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Publication number: 20110064191Abstract: An improved microcalorimeter-type energy dispersive x-ray spectrometer provides sufficient energy resolution and throughput for practical high spatial resolution x-ray mapping of a sample at low electron beam energies. When used with a dual beam system that provides the capability to etch a layer from the sample, the system can be used for three-dimensional x-ray mapping. A preferred system uses an x-ray optic having a wide-angle opening to increase the fraction of x-rays leaving the sample that impinge on the detector and multiple detectors to avoid pulse pile up.Type: ApplicationFiled: August 10, 2010Publication date: March 17, 2011Applicant: FEI COMPANYInventors: Milos Toth, Michael R. Scheinfein, Eric Silver, David Narum
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Publication number: 20110031394Abstract: The current invention includes methods and apparatuses for processing, that is, altering and imaging, a sample in a high pressure charged particle beam system. Embodiments of the invention include a cell in which the sample is positioned during high pressure charged particle beam processing. The cell reduces the amount of gas required for processing, thereby allowing rapid introduction, exhaustion, and switching between gases and between processing and imaging modes. Maintaining the processes gases within the cell protects the sample chamber and column from contact with the gases. In some embodiments, the temperature of the cell walls and the sample can be controlled.Type: ApplicationFiled: February 6, 2008Publication date: February 10, 2011Applicant: FEI COMPANYInventors: William Ralph Knowles, Rae Knowles, Milos Toth
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Publication number: 20110031655Abstract: An improved method for laser processing that prevents material redeposition during laser ablation but allows material to be removed at a high rate. In a preferred embodiment, laser ablation is performed in a chamber filled with high pressure precursor (etchant) gas so that sample particles ejected during laser ablation will react with the precursor gas in the gas atmosphere of the sample chamber. When the ejected particles collide with precursor gas particles, the precursor is dissociated, forming a reactive component that binds the ablated material. In turn, the reaction between the reactive dissociation by-product and the ablated material forms a new, volatile compound that can be pumped away in a gaseous state rather than redepositing onto the sample.Type: ApplicationFiled: June 30, 2010Publication date: February 10, 2011Applicant: FEI COMPANYInventors: Milos Toth, Marcus Straw
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Publication number: 20100224592Abstract: Electron-beam-induced chemical reactions with precursor gases are controlled by adsorbate depletion control. Adsorbate depletion can be controlled by controlling the beam current, preferably by rapidly blanking the beam, and by cooling the substrate. The beam preferably has a low energy to reduce the interaction volume. By controlling the depletion and the interaction volume, a user has the ability to produce precise shapes.Type: ApplicationFiled: March 8, 2010Publication date: September 9, 2010Applicant: FEI COMPANYInventors: MILOS TOTH, Richard J. Young, Alexander Henstra, Alan Frank de Jong, Johannes Jacobus Lambertus Mulders
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Patent number: 7791020Abstract: A novel detector for a charged particle beam system which includes multiple gas amplification stages. The stages are typically defined by conductors to which voltage are applied relative to the sample or to a previous stage. By creating cascades of secondary electrons in multiple stages, the gain can be increased without causing dielectric breakdown of the gas.Type: GrantFiled: March 31, 2008Date of Patent: September 7, 2010Assignee: FEI CompanyInventors: Marek Uncovsky, Milos Toth, William Ralph Knowles
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Publication number: 20100127190Abstract: An improved method for substrate micromachining. Preferred embodiments of the present invention provide improved methods for the utilization of charged particle beam masking and laser ablation. A combination of the advantages of charged particle beam mask fabrication and ultra short pulse laser ablation are used to significantly reduce substrate processing time and improve lateral resolution and aspect ratio of features machined by laser ablation to preferably smaller than the diffraction limit of the machining laser.Type: ApplicationFiled: November 26, 2008Publication date: May 27, 2010Applicant: FEI COMPANYInventors: MARCUS STRAW, Milos Toth, Steven Randolph, Michael Lysaght, Mark Utlaut
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Publication number: 20100108881Abstract: A scanning transmission electron microscope operated with the sample in a high pressure environment. A preferred detector uses gas amplification by converting either scattered or unscattered transmitted electrons to secondary electrons for efficient gas amplification.Type: ApplicationFiled: November 4, 2008Publication date: May 6, 2010Applicant: FEI COMPANYInventors: MILOS TOTH, Rae Knowles, William Ralph Knowles
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Publication number: 20090242758Abstract: A novel detector for a charged particle beam system which includes multiple gas amplification stages. The stages are typically defined by conductors to which voltage are applied relative to the sample or to a previous stage. By creating cascades of secondary electrons in multiple stages, the gain can be increased without causing dielectric breakdown of the gas.Type: ApplicationFiled: March 31, 2008Publication date: October 1, 2009Applicant: FEI COMPANYInventors: MAREK UNCOVSKY, MILOS TOTH, WILLIAM RALPH KNOWLES
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Patent number: 7541580Abstract: A detector for use with a high pressure SEM, such as an ESEMĀ® environmental SEM from FEI Company, extends the effective detection space above the PLA, thereby increasing secondary signal amplification without increasing working distance or pressure. Embodiments can therefore provide improved resolution and can operate at lower gas pressures.Type: GrantFiled: March 30, 2007Date of Patent: June 2, 2009Assignee: FEI CompanyInventors: William Ralph Knowles, Milos Toth
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Publication number: 20080314871Abstract: A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.Type: ApplicationFiled: June 21, 2007Publication date: December 25, 2008Applicant: FEI CompanyInventors: Milos Toth, Noel Smith
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Publication number: 20080035861Abstract: A detector for use with a high pressure SEM, such as an ESEMĀ® environmental SEM from FEI Company, extends the effective detection space above the PLA, thereby increasing secondary signal amplification without increasing working distance or pressure. Embodiments can therefore provide improved resolution and can operate at lower gas pressures.Type: ApplicationFiled: March 30, 2007Publication date: February 14, 2008Applicant: FEI CompanyInventors: William Knowles, Milos Toth