Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A battery cell includes an electrode assembly, a pair of electrode leads electrically connected to the electrode assembly, a battery case configured to accommodate the pair of electrode leads such that the pair of electrode leads protrude at least partially in a front and rear direction of the battery cell, the battery case having an accommodation space formed to accommodate the electrode assembly, and a taping unit configured to integrally cover both side surfaces and upper and lower surfaces of the battery case.

Abstract: Disclosed herein, inter alia, are compounds, compositions, and methods of use thereof in the sequencing of a nucleic acid.

Abstract: Provided is an encoding apparatus for integrally encoding and decoding a speech signal and a audio signal, and may include: an input signal analyzer to analyze a characteristic of an input signal; a stereo encoder to down mix the input signal to a mono signal when the input signal is a stereo signal, and to extract stereo sound image information; a frequency band expander to expand a frequency band of the input signal; a sampling rate converter to convert a sampling rate; a speech signal encoder to encode the input signal using a speech encoding module when the input signal is a speech characteristics signal; a audio signal encoder to encode the input signal using a audio encoding module when the input signal is a audio characteristic signal; and a bitstream generator to generate a bitstream.

Abstract: A compound for an organic optoelectronic device, a composition for an organic optoelectronic device including the same, an organic optoelectronic device, and a display device, the compound is represented by Chemical Formula 1:

Abstract: The present disclosure relates to a polycarbonate resin composition, and more particularly, to a polycarbonate resin composition containing 90 wt % to 99 wt % of a polycarbonate resin, 0.3 wt % to 0.7 wt % of an anthraquinone-based black dye, and 0.2 wt % to 1.0 wt % of an acrylic polymeric chain extender, and a molded article containing the same.

Abstract: An image signal processor includes a register and a disparity correction unit. The register stores disparity data obtained from a pattern image data that an image senor generates, and the image sensor includes a plurality of pixels, and each of the pixel includes at least a first photoelectric conversion element and a second photoelectric conversion element. The image sensor generates the pattern image data in response to a pattern image located at a first distance from the image sensor. The disparity correction unit corrects a disparity distortion of an image data based on the disparity data to generate a result image data, and the image senor generates the image data by capturing an object.

Abstract: Disclosed is a switch circuit for an ultra-high frequency band, which includes a transistor including a first terminal connected to an input stage, a second terminal connected to an output stage, and a gate terminal, an inductor connected to the transistor in parallel, between the input stage and the output stage, a variable gate driver to apply a gate input voltage to the gate terminal and, an input resistor connected between the variable gate driver and the gate terminal. The variable gate driver adjusts the gate input voltage to be in one of a first voltage level for turning on the transistor and a second voltage level for turning off the transistor. The second voltage level varies depending on a capacitance between the first terminal and the second terminal, when the transistor is in a turn-off state.

Abstract: A manufacturing method for a semiconductor device, includes: forming a first gate structure and a second gate structure on a substrate; forming a deep trench isolation (DTI) hard mask on the first and second gate structures; forming a deep trench isolation disposed between the first gate structure and the second gate structure; depositing a first undoped oxide layer in the deep trench isolation; performing a first etch-back process on the first undoped oxide layer to remove a portion of the undoped oxide layer; depositing a first deep trench isolation (DTI) gap-fill layer on a remaining portion of the undoped oxide layer, and performing a second etch-back process on the first DTI gap-fill layer; depositing a second DTI gap-fill layer to seal the deep trench isolation, and forming a planarized second DTI gap-fill layer by a planarization process; and depositing a second undoped layer on the planarized second DTI gap-fill layer.

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: A method and apparatus for array image processing are provided. The method includes receiving sub images corresponding to different views of an input array image generated through an array lens, generating temporary restored images based on the sub images using a gradient between neighboring pixels of each of the sub images, determining matching information based on a view difference between pixels of the sub images using a neural network model, based on a pixel distance between matching pairs of the pixels of the sub images using the matching information, extracting refinement targets from the matching pairs, refining the matching information by replacing at least some of target pixels included in the refinement targets based on a local search of a region based on pixel locations of the refinement targets, and generating an output image of a single view by merging the temporary restored images based on the refined matching information.

Abstract: A method for intraoperative planning and facilitating a revision arthroplasty procedure includes displaying a virtual model of a bone, capturing positions of a tracked probe as the tracked probe contacts points at a perimeter of a primary implant component coupled to the bone, generating a virtual representation of an interface between the primary implant component and the virtual model of the bone using the positions of the tracked probe, planning a bone resection using the virtual representation of the interface, and guiding execution of the bone resection.

Abstract: The embodiment relates to a data driving device for driving pixels of a display panel. In the data driving device, two adjacent DACs can have different gate loads for the same gray level value so that the fluctuation of the gate load according to the gray level value is reduced.

Abstract: The present invention relates to an antibacterial peptide and an antibacterial compound targeting the Klebsiella pneumoniae VapBC toxin-antitoxin system, or their use.

Abstract: There is provided an additive for secondary battery electrolyte, containing aluminum silicate. The aluminum silicate has a particle size of 200 nm to 20 ?m. The aluminum silicate has a mass ratio of 60 to 70 wt % of oxygen (O), 0.1 to 2.0 wt % of aluminum (Al), and 25 to 35 wt % of silicon (Si). The aluminum silicate has a surface area of 50 to 1,000 m2/g. The aluminum silicate has a pore size of 0.1 to 20 nm.

Abstract: A display apparatus is disclosed The display apparatus includes a display, configured to present an image interface, the image interface includes a render layer and a display layer superimposed: and a controller, configured to obtain a target video resource and one or more recommended video resource associated with the target video resource; control the display layer to present the target video resource and output audio of the target video resource; and control the render layer to present the one or more recommended video resource simultaneously.

Abstract: There is provided an additive, containing magnesium silicate, for a secondary battery electrolyte and a preparation method therefor. The magnesium silicate has a mass ratio of 50 to 70 wt % of oxygen (O), 5 to 20 wt % of magnesium (Al), and 15 to 35 wt % of silicon (Si). The magnesium silicate has a surface area of 50 to 500 m2/g. The magnesium silicate has a pore size of 0.1 to 20 nm.

Abstract: Disclosed is an LPC residual signal encoding/decoding apparatus of an MDCT based unified voice and audio encoding device. The LPC residual signal encoding apparatus analyzes a property of an input signal, selects an encoding method of an LPC filtered signal, and encode the LPC residual signal based on one of a real filterbank, a complex filterbank, and an algebraic code excited linear prediction (ACELP).

Abstract: Provided is a non-volatile memory device including a page buffer circuit having a multi-stage structure, wherein a stage of the multi-stage structure includes a high voltage region, a first low voltage region, and a second low voltage region. The high voltage region includes a first high voltage transistor connected to one of first to sixth bit lines and a second high voltage transistor connected to one of seventh to twelfth bit lines, the first low voltage region includes a first transistor connected to the first high voltage transistor, and the second low voltage region includes a second transistor connected to the second high voltage transistor. Each of the first low voltage region and the second low voltage regions has a first width corresponding to a pitch of six bit lines, and the high voltage region has a second width corresponding to a pitch of twelve bit lines.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a swing nozzle that is arranged on one side of the support module, moves in a swing manner, and sprays a chemical solution to the substrate, a sensor arranged on one side of the swing nozzle to sense movement of the swing nozzle, an electromagnet and a magnet installed on the other side of the swing nozzle so as to be able to adjust spacing relative to each other, and a controller for receiving a sensing result of the sensor and performing a damping operation to the swing nozzle by providing power to the electromagnet to generate an attractive force or repulsive force between the electromagnet and the magnet.