Abstract: Disclosed are herein an apparatus and method for extreme ultraviolet (EUV) spectroscope calibration. The apparatus for EUV spectroscope calibration includes an EUV generating module, an Al filter, a diffraction grating, a CCD camera, a spectrum conversion module, and a control module that compares a wavelength value corresponding to a maximum peak among peaks of the spectrum depending on the order of the EUV light converted from the spectrum conversion module with a predetermined reference wavelength value depending on an order of high-order harmonics to calculate a difference value with the closest reference wavelength value, and controls the spectrum depending on the order of the EUV light converted from the spectrum conversion module to be moved in a direction of wavelength axis by the calculated difference value. Thus, it is possible to accurately measure a wavelength of a spectrum of EUV light used in EUV exposure technology and mask inspection technology.

Abstract: Provided are an apparatus and method for calibrating an extreme ultraviolet (EUV) spectrometer in which a wavelength of a spectrum of EUV light used for EUV lithography and mask inspection technology can be measured accurately.

Abstract: Provided is a pulse laser apparatus for generating laser light. The apparatus includes a first mirror and a second mirror which are disposed at both ends of a resonator and configured to reflect the laser light, a gain medium disposed between the first and second mirrors and configured to amplify and output light incident from an outside, an etalon configured to adjust a pulse width of the laser light, and an acousto-optic modulator disposed between the first and second mirrors and configured to form a mode-locked and Q-switched signal from the laser light, in which some of the laser light is output through either the first or second mirror to outside the resonator.

Abstract: Provided are an apparatus and method for calibrating an extreme ultraviolet (EUV) spectrometer in which a wavelength of a spectrum of EUV light used for EUV lithography and mask inspection technology can be measured accurately.

Abstract: Provided is a three-dimensional (3D) display system. The 3D display system synthesizes a 3D image and position information data of an observer obtained through a camera with an optimal viewing area image with respect to horizontal and vertical directions of a display panel in a 3D space, and displays the synthesized image on the display panel such that the observer can visually know an optimal viewing area. Accordingly, the 3D display system enables the observer to visually check the optimal viewing area with ease and induces the observer to move to a position in the optimal viewing area.

Abstract: Provided is a pulse laser apparatus for generating laser light. The apparatus includes a first mirror and a second mirror which are disposed at both ends of a resonator and configured to reflect the laser light, a gain medium disposed between the first and second mirrors and configured to amplify and output light incident from an outside, an etalon configured to adjust a pulse width of the laser light, and an acousto-optic modulator disposed between the first and second mirrors and configured to form a mode-locked and Q-switched signal from the laser light, in which some of the laser light is output through either the first or second mirror to outside the resonator.

Abstract: The present invention is related to a anticancer composition comprising full length GRS protein or a fragment thereof, a nucleic acid encoding the GRS protein or a fragment thereof. Since the GRS proteins or fragments thereof have activity to induce apoptosis of cancer cell specifically, a composition comprising the GRS proteins or fragments thereof or a nucleic acid encoding thereof may be useful to treatment of cancer.

Abstract: A semiconductor device may include a substrate including an active region defined by a device isolation layer, gate electrodes extending in a first direction on the substrate and spaced apart from each other, gate tabs extending in a second direction different from the first direction and connecting adjacent gate electrodes to each other, the gate tabs spaced apart from each other, and a first contact plug disposed on the active region under a space confined by the adjacent gate electrodes and adjacent gate tabs. The space may include a first region having a first width and a second region having a second width smaller than the first width, the first contact plug may be disposed on the active region under the second region.

Abstract: The present invention relates to a novel method of screening an agent for preventing or treating cancer using glycyl-tRNA synthetase (GRS) and cadherin (CDH). More particularly, it relates to a method of screening and test agent which modulates the binding level of GRS or their fragment with CDH. As can be seen foregoing, the present invention relates to a novel use of GRS and CDH and provides a method of screening an agent for preventing or treating cancer. The method may be used for developing novel agent for treatment of various cancer.

Abstract: Semiconductor devices are provided including a gate across an active region of a substrate; a source region and a drain region in the active region on either side of the gate and spaced apart from each other; a main channel impurity region in the active region between the source and drain regions and having a first channel impurity concentration; and a lightly doped channel impurity region in the active region adjacent to the drain region. The lightly doped channel impurity region has the same conductivity type as the main channel impurity region and a second channel impurity concentration, lower than the first channel impurity concentration. The lightly doped channel impurity region and the main channel impurity region contain a first element. The lightly doped channel impurity region also contains a second element, which is a different Group element from the first element.

Abstract: Provided is a three-dimensional (3D) display system. The 3D display system synthesizes a 3D image and position information data of an observer obtained through a camera with an optimal viewing area image with respect to horizontal and vertical directions of a display panel in a 3D space, and displays the synthesized image on the display panel such that the observer can visually know an optimal viewing area. Accordingly, the 3D display system enables the observer to visually check the optimal viewing area with ease and induces the observer to move to a position in the optimal viewing area.

Abstract: An apparatus for generating energy using sensible heat of an offgas during manufacture of molten iron and a method for generating energy using the same are provided. The method for generating energy includes i) providing an offgas discharged from an apparatus for manufacturing molten iron including a reduction reactor that provides reduced iron that is reduced from iron ore and a melter-gasifier that melts the reduced iron to manufacture molten iron; ii) converting cooling water into high pressure steam by contacting the cooling water with the offgas; and iii) generating energy from at least one steam turbine by supplying the high pressure steam to the steam turbine and rotating the steam turbine.

Abstract: A semiconductor device includes a substrate, a device isolation layer at the substrate and defining an active region, and a gate electrode on the substrate and extending across the active region. The active region includes a first active region and a second active region, and the first and second active regions are arranged at opposing sides of a centerline of the gate electrode. At least one of the first and second active regions has a width decreasing from a region outside the gate electrode toward the centerline of the gate electrode, and the first and second active regions are asymmetric with respect to the centerline of the gate electrode.

Abstract: Semiconductor devices are provided including a gate across an active region of a substrate; a source region and a drain region in the active region on either side of the gate and spaced apart from each other; a main channel impurity region in the active region between the source and drain regions and having a first channel impurity concentration; and a lightly doped channel impurity region in the active region adjacent to the drain region. The lightly doped channel impurity region has the same conductivity type as the main channel impurity region and a second channel impurity concentration, lower than the first channel impurity concentration. The lightly doped channel impurity region and the main channel impurity region contain a first element. The lightly doped channel impurity region also contains a second element, which is a different Group element from the first element.

Abstract: The present invention is related to a anticancer composition comprising full length GRS protein or a fragment thereof, a nucleic acid encoding the GRS protein or a fragment thereof. Since the GRS proteins or fragments thereof have activity to induce apoptosis of cancer cell specifically, a composition comprising the GRS proteins or fragments thereof or a nucleic acid encoding thereof may be useful to treatment of cancer.

Abstract: An apparatus for generating energy using sensible heat of an offgas during manufacture of molten iron and a method for generating energy using the same are provided. The method for generating energy includes i) providing an offgas discharged from an apparatus for manufacturing molten iron including a reduction reactor that provides reduced iron that is reduced from iron ore and a melter-gasifier that melts the reduced iron to manufacture molten iron; ii) converting cooling water into high pressure steam by contacting the cooling water with the offgas; and iii) generating energy from at least one steam turbine by supplying the high pressure steam to the steam turbine and rotating the steam turbine.

Abstract: The present invention relates to an apparatus for manufacturing compacted irons of the reduced materials containing fine reduce irons and an apparatus for manufacturing molten irons provided with the same. The apparatus for manufacturing compacted irons according to the present invention includes a couple of rollers for compacting reduced materials containing fine reduced irons and manufacturing compacted irons, a guide chute for guiding compacted irons which are discharged from the couple of rollers; and crushers for crushing compacted irons which are guided into the guide chute. A guiding surface of the guide chute, which guides the compacted irons, includes a straight slanted surface and a curved slanted surface.

Abstract: The invention relates to a fabrication of an integrated optical isolator using a Multi-Mode Interference (MMI) structure and a cladding layer comprising magneto-optical material, which remove needless reflection generated in the course of light propagation and make short length integration possible. Thus, the invention uses nonreciprocal phase shift effect that optical characteristics are altered according to the direction of light propagation. In order to fabricate a light waveguide optical isolator, an input light should be separated into two light waveguides having the same power. That is, for the purpose of reducing the length of optical isolator device, the waveguide length needed to separate an input light into two light waveguides should be shortened. Since the light waveguide length of MMI structure is much shorter than the length of Mach-Zehnder light waveguide for separating an input light into two waveguides, the length of optical isolator device using MMI structure can be reduced.

Abstract: A semiconductor magneto-optical integrated optical isolator is realized with a Mach-Zehnder integrated optical isolator in which a cladding and a guiding layer of light waveguide are composed of magnetic material. Here, it uses nonreciprocal phase shift created when light propagation direction is changed. The fundamental element deriving this nonreciprocal phase shift is the Faraday rotation of magnetic material. Therefore, it is essential to have large Faraday rotation in order to fabricate a short length integrated optical isolator. However, since magnetic material of bulk state does not have large Faraday rotation, there need the length of several mm units for fabricating an isolator. The invention is to realize an integrated optical isolator using magneto-optical crystal in which magneto-optical material and dielectric substance have periodic structure.