Abstract: A liquid crystal display includes a first substrate including pixels arranged in m columns by n rows, n data lines disposed, m gate lines arranged substantially parallel to the data lines, n data distribution lines arranged to cross the m gate lines and electrically connected to the data lines, respectively, source driving chips disposed on a first portion of the first substrate, and a gate driver disposed on a second portion of the first substrate. Each of the data distribution lines is connected to a subset of the pixels arranged in a corresponding row, and each of the gate lines is connected to a subgroup of the pixels arranged in a corresponding column. The source driving chips apply data signals to the pixels through the first data lines and the data distribution lines, and the gate driver applies gate signals to the pixels through the gate lines.

Abstract: A liquid crystal display includes a substrate, a plurality of signal lines, a gate driver, and a sealant. The substrate includes a display area and a peripheral area outside the display area. The signal lines are integrated with the substrate and include a clock signal line. The gate driver includes a stage located between the clock signal line and the display area. The stage is integrated with the substrate and is configured to apply a gate voltage to the display area. The sealant is distributed over part of the peripheral area. A seal region where the sealant is distributed includes a seal line, and the clock signal line is located within the seal line. The clock signal line is located further away from the stage than the other signal lines.

Abstract: A display substrate includes a data line, a gate line and a fan-out line. The data line is disposed in a display area of a base substrate and transfers a data signal to a switching element electrically connected to a pixel electrode. The gate line is disposed in the display area and transfers a gate signal to the switching element. The fan-out line is disposed in a peripheral area of the base substrate surrounding the display area, electrically connected to at least one of the data line and the gate line, and includes a plurality of conductive layers making contact with each other through a contact hole.

Abstract: A method of manufacturing a solar cell includes preparing a base substrate having a first conductive type; diffusing an impurity having a second conductive type (opposite the first conductive type) into the base substrate to form an emitter layer having a first impurity concentration on the base substrate and a by-product layer on the emitter layer; irradiating a laser beam onto the emitter layer corresponding to a first region of the base substrate to form a front contact portion having a second impurity concentration higher than the first impurity concentration; irradiating the laser beam onto the by-product layer to remove the by-product layer corresponding to the first region; removing the by-product layer from an area outside of the first region; forming an anti-reflection layer on the base substrate; forming a front electrode on the anti-reflection layer corresponding to the first region; and forming a back electrode on the base substrate.

Abstract: A method of fabricating a solar cell includes forming an emitter layer of a second conductive type on a front surface and a back surface of a substrate of a first conductive type opposite to the second conductive type, forming an anti-reflection layer on the front surface of the substrate, partially removing the anti-reflection layer and the emitter layer to form an isolation groove dividing the emitter layer into a plurality of regions, removing a portion of the emitter layer formed on the back surface of the substrate, and forming a passivation layer covering the isolation groove and the back surface of the substrate.

Abstract: A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.