Abstract: A flat panel display device has a transistor in which cross-talk is minimized. The flat panel display device includes a substrate, a first gate electrode formed on the substrate, a first electrode insulated from the first gate electrode, a second electrode insulated from the first gate electrode and surrounding the first electrode in the same plane, a semiconductor layer insulated from the first gate electrode and contacting the first electrode and the second electrode, and a display element including a pixel electrode electrically connected to one of the first electrode and the second electrode.

Abstract: A substrate prevented from being deformed due to thermal stress or deposition stress includes a deformation preventing layer arranged on one surface of the substrate. The substrate can include a thin film transistor arranged on one surface of the substrate and the deformation preventing layer, arranged on the another surface of the substrate, and including at least one layer.

Abstract: Provided are a method of manufacturing an organic thin film transistor (TFT), the organic TFT manufactured using the method, and a flat panel display device comprising the organic TFT. The method includes: coating a lubricant on a predetermined region of a substrate where an organic semiconductor layer is not to be formed; coating an organic semiconductor layer on the entire substrate; heating the coated substrate to melt the lubricant; and releasing the organic semiconductor layer formed above the predetermined region from the substrate. According to the method, the organic semiconductor layer can be effectively patterned without damaging the substrate and the organic semiconductor material.

Abstract: An organic thin film transistor comprising an organic semiconductor layer that does not cause a coffee stain effect and can prevent an imperfect contact with source and drain electrodes, and a flat panel display apparatus comprising the organic thin film transistor are provided. The organic thin film transistor comprises a gate electrode; source and drain electrodes insulated from the gate electrode; and an organic semiconductor layer insulated from the gate electrode and contacts the source and drain electrodes, wherein the organic semiconductor layer has a circular shape when viewed through a substrate on which the organic thin film transistor is formed, and an edge portion of at least one of the source and drain electrodes contacting the organic semiconductor layer having a curved shape that is concave toward the organic semiconductor layer.

Abstract: Organic TFTs having uniform characteristics and a flat panel display having the organic TFT, wherein the organic TFTs include an organic semiconductor layer formed by spin coating are disclosed. One embodiment of the organic TFT includes: a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, an organic semiconductor layer disposed on the gate insulating film, and a source electrode and a drain electrode that contact the organic semiconductor layer, wherein a plurality of protrusion parts is formed on the gate insulating film and the protrusion parts extend toward the drain electrode from the source electrode.

Abstract: An EL device with low manufacturing costs and improved yield due to simplified structure and use of an organic light emitting transistor and a method of manufacturing the same are disclosed.

Abstract: The present invention relates to an organic thin film transistor (OTFT), a method of fabricating the OTFT, and an organic electroluminescent display that has the OTFTs. The invention prevents surface damage of an organic semiconductor layer and reduces an off-current. The OTFT includes a substrate, a source electrode and a drain electrode formed on the substrate, and a semiconductor layer formed on the substrate that has a channel layer disposed over and between the source electrode and drain electrode. In addition, the OTFT includes a gate insulating layer formed on the semiconductor layer, a separation pattern formed through the semiconductor layer and the gate insulating layer to separate the channel layer, and a gate electrode formed on the gate insulating layer over the channel layer.

Abstract: An organic electroluminescent display device having an organic thin film transistor (OTFT) and a method of fabricating the same is disclosed. The display device can maintain an insulation property of a TFT and concurrently, ensure a sufficient capacitance by using an organic insulating layer for a gate insulating layer and using an inorganic insulating layer for a capacitor dielectric. In one embodiment, the organic electroluminescent display device includes a substrate having a capacitor region and a transistor region, a TFT formed in the transistor region of the substrate, and having a gate electrode, an organic semiconductor layer, a source electrode, and a drain electrode, a capacitor formed in the capacitor region of the substrate, and having a lower electrode and an upper electrode, and a display element connected to one of source/drain electrodes of the TFT.

Abstract: An organic light emitting display having red, green, blue, cyan, magenta, and yellow color modulation layers. The organic light emitting display includes a substrate, a first electrode arranged on the substrate, a second electrode arranged on the first electrode, an organic functional layer arranged between the first electrode and the second electrode, the organic functional layer comprises at least an emission layer, and red, green, blue, cyan, magenta, and yellow color modulation layers separated from each other, wherein one of the first electrode and the second electrode is transparent and is arranged between each color modulation layer and the emission layer. Accordingly, it is possible to maintain white balance even for an aged display while having enhanced color reproducibility.

Abstract: The present invention provides a method of fabricating an improved organic light emitting display (OLED) as well as an OLED fabricated by the method. The method may include the following steps, which may be performed in any suitable order. At a first step, a substrate having at least one cell region is provided. At a second step, a light emitting device portion having at least one light emitting device is formed on the cell region. At a third step, a passivation layer is formed on the light emitting device portion. At a fourth step, a thin film transistor (TFT) portion is formed on the passivation layer. The TFT portion has an organic TFT (OTFT) electrically connected to each of the light emitting devices.

Abstract: A semiconductor device having two thin film transistors where cross-talk is minimized and a flat panel display device having the same.

Abstract: In a thin film transistor and a flat panel display device having the same, cross-talk is minimized. The flat panel display device includes a substrate, a first thin film transistor, a second thin film transistor, and a display element. The first thin film transistor includes: a first gate electrode formed on the substrate; a first electrode insulated from the first gate electrode; a second electrode insulated from the first gate electrode and surrounding the first electrode in the same plane; and a first semiconductor layer insulated from the first gate electrode and contacting the first electrode and the second electrode.

Abstract: Provided are an organic thin film transistor (TFT), which can prevent deformation or separation due to mechanical stress, and a flat panel display device including the organic TFT. The organic TFT includes a gate electrode; a source electrode and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode, and contacting the source electrode and the drain electrodes; and a gate insulating layer insulating the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer. The gate insulating layer may be patterned in an island shape to permit adjacent portions of the substrate to flex freely, thereby reducing stress and deformation of the organic TFT and its component layers.

Abstract: An organic thin film transistor (OTFT) having an adhesive layer and a method of fabricating the same. The OTFT includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode and on remaining exposed portions of the substrate, an adhesive layer formed on the gate insulating layer, source/drain electrodes formed on the adhesive layer, and a semiconductor layer formed on the source/drain electrodes and on the adhesive layer. The gate insulating layer and the semiconductor layer are organic, the adhesive layer providing adhesion between the source/drain electrodes and the gate insulating film while preventing gate leakage current while also improving contact resistance.

Abstract: The invention provides an improved thin film transistor (TFT) that can be formed at room temperature and has an improved contact resistance between an active layer and source and drain electrodes, and further provides a flat display device using such a TFT. The TFT includes an active layer including at least two nano particle layers which include at least one nano particle type, an insulating layer interposed between the nano particle layers, a gate electrode insulated from the active layer, and source and drain electrodes formed in respective channels, the source and drain electrodes contact one of the nano particle layers of the active layer. The structure of the TFT facilitates the simultaneous manufacturing of a plurality of different types of TFTs.

Abstract: An organic EL display device includes first and second electrodes with a light-emitting layer interposed therebetween and an organic soluble derivative layer arranged between the first electrode and the light-emitting layer, wherein the organic soluble derivative layer prevents impurities from being diffused to the light-emitting layer.

Abstract: A thin film transistor that does not deform or exfoliate due to thermal or mechanical stress, a flat panel display having the same, and a method manufacturing the same, the thin film transistor including a substrate, a patterned buffer layer disposed on the substrate, a patterned active layer disposed on the buffer layer, a gate electrode insulated from the active layer, and a source electrode and a drain electrode that contact the active layer and are insulated from the gate electrode.

Abstract: The present invention provides an organic thin film transistor and method for fabricating the same. The organic thin film transistor has a substrate and a gate electrode that is positioned on the substrate. A gate insulator has a stacked structure comprising an inorganic gate insulator and an organic gate insulator that are positioned on the gate electrode. An organic semiconductor layer is positioned on the gate insulator to overlap the gate electrode. Accordingly, an organic thin film transistor that has flexibility, decreased leakage current, and a low threshold is formed.

Abstract: Provided is an active matrix organic electroluminescent (EL) display device including an organic thin film transistor (TFT), preferably n-type, having a higher aperture ratio and easily realized in an array structure. The display device includes a facing electrode; an intermediate layer including at least a light emitting layer on the facing electrode; a pixel electrode formed on the intermediate layer; a first electrode located on the pixel electrode and insulated from the pixel electrode; a second electrode located on the pixel electrode and coupled with the pixel electrode; an n-type organic semiconductor layer contacting the first electrode and the second electrode; and a first gate electrode located on the n-type organic semiconductor layer and insulated from the first electrode, the second electrode, and the n-type organic semiconductor layer.

Abstract: An active matrix electroluminescent (OEL) display device including a p-type organic thin-film transistor (TFT) is provided. This device has a high aperture ratio, and is easily produced in an array structure. The display device includes a counter electrode, an intermediate layer including at least a light emitting layer on the counter electrode, a pixel electrode formed on the intermediate layer, a first electrode that is disposed on the pixel electrode and insulated from the pixel electrode, a second electrode that is disposed on the pixel electrode and connected to the pixel electrode, a p-type organic semiconductor layer contacting the first electrode and the first drain electrode, and a first gate electrode that is disposed on the p-type organic semiconductor layer and insulated from the first electrode, the first drain electrode, and the p-type organic semiconductor layer.