Abstract: An organic electroluminescent display device includes a substrate, a first electrode formed on the substrate, an organic layer formed on the first electrode, and a second electrode formed on the organic layer. The organic layer includes an organic emission layer and an organic material layer, and the organic material layer has a surface with a roughness in a range of Rms 11 ? to 50 ?.

Abstract: A semiconductor device having two thin film transistors where cross-talk is minimized and a flat panel display device having the same.

Abstract: An organic TFT that has an improved contact between source and drain electrodes and an organic semiconductor layer, a method of manufacturing the same, and an organic light emitting display device having the organic TFT are disclosed. The organic TFT includes a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, a source electrode and a drain electrode disposed on the gate insulating film, a peel-off preventive layer disposed on the gate insulating film to contact at least a portion of end surfaces of the source and drain electrodes, and an organic semiconductor layer that contacts the source and drain electrodes.

Abstract: An organic thin film transistor (OTFT) having a patterned organic semiconductor layer on top of an electrode wiring layer. In order to avoid damage to the underlying electrode wiring layer, the organic semiconductor layer is patterned so that none of the organic semiconductor layer is removed off the electrode wiring layer. The patterned organic semiconductor layer completely covers all of the underlying electrode wiring layer. The OTFT includes a gate electrode, source and drain electrodes insulated from the gate electrode and an organic semiconductor layer which is insulated from the gate electrode and is in contact with the source and drain electrodes, wherein the organic semiconductor layer completely covers the source and drain electrodes. In addition, an organic light emitting display device includes more than one OTFT as well as an organic light-emitting element electrically connected to the electrical conductor.

Abstract: Provided is an organic thin film transistor that can prevents damage to source and drain electrodes when patterning an organic semiconductor layer, and a method of manufacturing an organic light emitting display device having the organic thin film transistor. The organic thin film transistor includes a source electrode and a drain electrode; an organic semiconductor layer that contacts the source and drain electrodes, and has an ashed surface except a channel area between the source and drain electrodes; a gate electrode insulated from the source electrode, the drain electrode, and the organic semiconductor layer; and a gate insulating film that insulates the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer.

Abstract: A method of forming an organic thin film transistor is disclosed. The method includes forming source and drain electrodes on a substrate; forming an insulating layer covering the source and drain electrodes; first surface-treating the insulating layer so that the insulating layer has a hydrophobic surface; forming an opening that exposes facing portions of the source and drain electrodes in the first surface-treated insulating layer; forming an organic semiconductor layer and a gate insulating layer in the opening; second surface-treating the first surface-treated insulating layer so that the insulating layer has a hydrophilic surface; and forming a gate electrode overlapping at least a portion of the source and drain electrodes, an organic thin film transistor, and a flat panel display device including the organic thin film transistor.

Abstract: An organic light-emitting device has a color modulation layer. The organic light-emitting device comprises a substrate, a first electrode positioned on the substrate and a second electrode positioned on the first electrode, wherein at least one of the first electrode and the second electrode is transparent. An organic functional layer having at least an emission layer emitting white color light is interposed between the first electrode and the second electrode. A color modulation layer formed by a laser-induced thermal imaging method is positioned on a surface opposite to a surface adjacent to the emission layer of the transparent electrode, wherein the color modulation layer has at least a color conversion medium.

Abstract: An organic thin film transistor (TFT), a method of manufacturing the organic TFT, and a flat display apparatus having the organic TFT are provided. The organic TFT has a gate insulating layer with openings filled with a conductive material, thereby preventing short circuits from occurring between channels connecting the source and drain lines to the organic semiconductor layer. The organic TFT includes a substrate including a source line, a drain line, and a gate electrode. The organic TFT further includes a gate insulating layer formed on the source and drain lines and on the gate electrode. The gate insulating layer has openings exposing the source and drain lines, which openings are filled with a conductive material. The organic TFT also includes an organic semiconductor layer electrically connected to the conductive material.

Abstract: An organic thin film transistor (OTFT) and a method of fabricating the same are provided in which an organic layer and metal interconnections are formed to have certain linewidths and shapes such that a degradation of device characteristics is prevented. The method includes providing a substrate, forming a gate electrode on the substrate, forming a gate insulating layer on the gate electrode, forming source and drain electrodes on the gate insulating layer, and forming a semiconductor layer on the source and drain electrodes. The gate electrode is formed by an inkjet printing method and ablated by a laser.

Abstract: An organic thin film transistor (TFT) that allows an organic semiconductor layer to be easily patterned includes a gate electrode, source and drain electrodes insulated from the gate electrode, a self-assembly monolayer formed on the source and drain electrodes, an organic semiconductor layer which is insulated from the gate electrode and covers at least a portion of the self-assembly monolayer. A flat panel display apparatus includes the organic TFT. A method of manufacturing an organic TFT includes forming source and drain electrodes on a substrate; forming a self-assembly monolayer covering at least the source and drain electrodes; patterning the self-assembly monolayer to remove portions of the self-assembly monolayer that are not located on the source and drain electrodes; and forming an organic semiconductor layer by inkjet printing an organic semiconductor material between the source and drain electrodes.

Abstract: A flat panel display device of which a display unit is efficiently sealed and which has good flexibility, and a method of manufacturing the flat panel display. The flat panel display device includes a substrate, a display unit formed on the substrate, and a sealing part formed so as to cover the display unit using an atomic layer deposition (ALD) method.

Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.

Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

Abstract: An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.

Abstract: An organic thin film transistor that can control the threshold voltage and reduce leakage current includes: a gate electrode; an organic semiconductor layer insulated from the gate electrode; a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the organic semiconductor layer; a gate insulating layer interposed between the gate electrode and the organic semiconductor layer; and a hole control layer that is interposed between the gate insulating layer and the organic semiconductor layer. The hole control layer includes a compound having a hole-donor group or a compound having a hole-acceptor group.

Abstract: The organic TFT includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer insulating the gate electrode from the source and drain electrodes and the organic semiconductor layer; and a self-assembly monolayer (SAM) included between the insulating layer and the organic semiconductor layer. A compound forming the SAM has at least one terminal group selected from the group consisting of an unsubstituted or substituted C6-C30 aryl group and an unsubstituted or substituted C2-C30 heteroaryl group. The organic TFT is formed by forming the above-described layers and forming the SAM on the insulating layer before the organic semiconductor layer and source and drain electrodes are formed.

Abstract: An organic thin film transistor includes a substrate, a gate electrode, a gate insulating layer, a first electrode, and a second electrode disposed on the substrate, a first layer disposed on the substrate, the first layer being photosensitive, a second layer disposed on the first layer, the second layer being hydrophobic, an opening defined in the first and second layers, the opening corresponding to the gate electrode, and a hydrophilic organic semiconductor disposed in the opening.

Abstract: An active matrix electroluminescent (OEL) display device including a p-type organic thin-film transistor (TFT) is provided. This device has a high aperture ratio, and is easily produced in an array structure. The display device includes a counter electrode, an intermediate layer including at least a light emitting layer on the counter electrode, a pixel electrode formed on the intermediate layer, a first electrode that is disposed on the pixel electrode and insulated from the pixel electrode, a second electrode that is disposed on the pixel electrode and connected to the pixel electrode, a p-type organic semiconductor layer contacting the first electrode and the first drain electrode, and a first gate electrode that is disposed on the p-type organic semiconductor layer and insulated from the first electrode, the first drain electrode, and the p-type organic semiconductor layer.

Abstract: An organic electroluminescent (EL) device includes a substrate, a first electrode disposed on the substrate, an emission layer comprising a polymer disposed on the first electrode, a second electrode formed on the emission layer, and a metal infiltration preventing layer, formed between the emission layer and the second electrode, for preventing a second electrode forming metal from infiltrating into the emission layer. A manufacturing method includes operations to prepare the EL device.

Abstract: An organic TFT including a gate electrode, a source electrode and a drain electrode insulated from the gate electrode, and an organic semiconductor layer that is insulated from the gate electrode and contacts the source electrode and the drain electrode. The length of portions of edges of the source electrode, which contact the organic semiconductor layer and face the drain electrode, is greater than the length of portions of edges of the drain electrode, which contact the organic semiconductor layer and face the source electrode to reduce the contact resistance between the source electrode and the organic semiconductor layer.