Abstract: Semiconductor memory devices are provided. A semiconductor memory device includes an isolation layer in a first trench and a first gate electrode portion on the isolation layer. The semiconductor memory device includes a second gate electrode portion in a second trench. In some embodiments, the second gate electrode portion is wider, in a direction, than the first gate electrode portion. Moreover, in some embodiments, an upper region of the second trench is spaced apart from the first trench by a greater distance, in the direction, than a lower region of the second trench. Related methods of forming semiconductor memory devices are also provided.

Abstract: A washing machine and a control method therefor are disclosed. The washing machine according to the present invention comprises: a drum for receiving laundry; a drying unit for adjusting the temperature of air in the drum so as to dry the laundry; a filter unit for filtering lint generated from the laundry; a cleaning unit for cleaning the filter unit; and a control unit for controlling the cleaning unit such that the filter unit is periodically cleaned during rotation of the drum. Accordingly, the washing machine can reduce the amount of lint generated from laundry during a drying process. Further, the washing machine according to the disclosure periodically cleans a filter for filtering lint generated from laundry, so as to facilitate circulation of air in the drum during a drying process, thereby improving the drying efficiency.

Abstract: Disclosed is a system for reprogramming an electronic control unit (ECU). The system for reprogramming an ECU according to the present disclosure preferentially stores controller area network (CAN) frames in a temporary storage medium, transmits the CAN frames to a main storage medium when the temporary storage medium receives a certain capacity, and minimizes the time required for reprogramming. The system for reprogramming an ECU according to the present disclosure can be linked to an artificial intelligence module, a robot, an augmented reality (AR) device, a virtual reality (VR) device, and a device related to 5G service.

Abstract: An integrated circuit (IC) chip includes a via contact plug extending inside a through hole passing through a substrate and a device layer, a via contact liner surrounding the via contact plug, a connection pad liner extending along a bottom surface of the substrate, a dummy bump structure integrally connected to the via contact plug, and a bump structure connected to the connection pad liner. A method of manufacturing an IC chip includes forming an under bump metallurgy (UBM) layer inside and outside the through hole and forming a first connection metal layer, a second connection metal layer, and a third connection metal layer. The first connection metal layer covers the UBM layer inside the through hole, the second connection metal layer is integrally connected to the first connection metal layer, and the third connection metal layer covers the UBM layer on the connection pad liner.

Abstract: The present invention relates to a composition for preventing or treating neurodegenerative diseases or depression, containing a 2-amino-2-(1,2,3-triazole-4-yl)propane-1,3-diol derivative as an active ingredient and more specifically, to a pharmaceutical composition for preventing or treating neurodegenerative diseases or depression, containing, as an active ingredient, the compound having an effect of directly inhibiting ASM activity.

Abstract: A printed circuit board includes a core layer, a plurality of conductive pattern layers disposed on one side and the other side of the core layer, a plurality of insulating layers disposed on the one side and the other side of the core layer, and a plurality of via layers disposed on the one side and the other side of the core layer. The printed circuit board has a wiring region and a dummy region surrounding at least a portion outside of the wiring region on a plane. A metal ratio in the dummy region on one side and a metal ratio in the dummy region on the other side are different from each other.

Abstract: A three-dimensional semiconductor device includes a first channel pattern on and spaced apart from a substrate, the first channel pattern having a first end and a second end that are spaced apart from each other in a first direction parallel to a top surface of the substrate, and a first sidewall and a second sidewall connecting between the first end and the second end, the first and second sidewalls being spaced apart from each other in a second direction parallel to the top surface of the substrate, the second direction intersecting the first direction, a bit line in contact with the first end of the first channel pattern, the bit line extending in a third direction perpendicular to the top surface of the substrate, and a first gate electrode adjacent to the first sidewall of the first channel pattern.

Abstract: A display device includes a substrate on which an active region and a non-active region disposed are defined. The non-active region at least partially surrounds the active region. A light-emitting element is disposed in the active region on the substrate. An encapsulation layer is disposed on the light-emitting element. Block patterns are disposed in the non-active region on the substrate and at least partially surround the active region. The non-active region includes a first non-active region positioned at a first side of the active region and a second non-active region positioned at a second side of the active region. There are more block patterns disposed in the first non-active region than in the second non-active region.

Abstract: According to one aspect of the present invention, the secondary battery includes: a waterproof part configured to surround at least a portion of a circumference of the electrode assembly so that a gas within the exterior passes through the waterproof part, but a liquid within the exterior does not pass through the waterproof part; and a vent part provided in an inner surface of the exterior to provide a path through which the gas within the exterior is discharged to the outside when an internal pressure of the exterior exceeds a certain value.

Abstract: A display driver integrated circuit (IC) device includes a first substrate having a first front surface and a first back surface; a first interlayer insulating layer on the first front surface; a wiring layer in the first interlayer insulating layer; a first bonding insulating layer on the first interlayer insulating layer; a second substrate having a second front surface and a second back surface, the second front surface being disposed toward the first front surface; a second interlayer insulating layer on the second front surface a second bonding insulating layer on the second interlayer insulating layer and physically bonded to the first bonding insulating layer; and a back via stack structure penetrating the second substrate, the second interlayer insulating layer, the second bonding insulating layer, the first bonding insulating layer, and the first interlayer insulating layer and electrically connected to the wiring layer.

Abstract: The present invention provides a pharmaceutical composition for oral administration, comprising (a) 4 to 40% by weight of a taxane, (b) 10 to 30% by weight of a medium chain triglyceride, (c) 30 to 70% by weight of monooleoyl glycerol, (d) 5 to 30% by weight of a surfactant, and (e) 10 to 30% by weight of polyoxyl glyceryl fatty acid ester and a process for preparing the same.

Abstract: A display device includes a pixel structure disposed in a display area, a first signal line disposed in a peripheral area adjacent to the display area, a second signal line which overlaps the first signal line in a plan view and extends in the same direction as the first signal line, a driving circuit part disposed in the peripheral area and electrically connected to the first signal line and the second signal line, and a first shielding pattern disposed between the first signal line and the second signal line.

Abstract: A semiconductor device includes an active fin on a substrate, a gate electrode and intersecting the active fin, gate spacer layers on both side walls of the gate electrode, and a source/drain region in a recess region of the active fin at at least one side of the gate electrode. The source/drain region may include a base layer in contact with the active fin, and having an inner end and an outer end opposing each other in the first direction on an inner sidewall of the recess region. The source/drain region may include a first layer on the base layer. The first layer may include germanium (Ge) having a concentration higher than a concentration of germanium (Ge) included in the base layer. The outer end of the base layer may contact the first layer, and may have a shape convex toward outside of the gate electrode on a plane.

Abstract: A display panel includes an upper display substrate and a lower display substrate. The upper display substrate includes a base substrate, a first partition wall on the base substrate, overlapping the light blocking area, and configured to define first, second, and third internal regions corresponding to the first, second, and third pixel areas, a second partition wall extending from the first partition wall, overlapping at least one area of the first, second, and third pixel areas, and configured to partition a region corresponding to the at least one area into partial regions, and first, second, and third color control layers respectively located in the first, second, and third internal regions.

Abstract: A semiconductor memory device includes a substrate, a first active pattern on the substrate, a gate electrode intersecting a channel region of the first active pattern, a first insulating layer covering the first active pattern and the gate electrode, a contact penetrating the first insulating layer so as to be electrically connected to a first source/drain region of the first active pattern, and a second active pattern on the first insulating layer. A channel region of the second active pattern vertically overlaps with the contact.

Abstract: A polishing slurry including a fullerene derivative and at least one compound having at least one positively-charged functional group, and a method of manufacturing a semiconductor device using the polishing slurry.

Abstract: The present invention relates to a pharmaceutical composition containing stem cells in which vascular endothelial growth factor (VEGF) is overexpressed as an effective ingredient for preventing or treating neurodegenerative diseases. The stem cells in which VEGF is overexpressed according to the present invention effectively act against the neurodegenerative disease-induced VEGF reduction of neural stem cells in the SVC to inhibit the abnormal migration of neural stem cells, suppress inflammatory responses, and restrain the accumulation of cholesterol and spingolipids in the cerebral cortex, thus restoring the behavior exercise capacity of animal models, whereby the pharmaceutical composition can be used as an effective therapeutic agent for neurodegenerative diseases.

Abstract: A printed circuit board includes a core layer, a plurality of conductive pattern layers disposed on one side and the other side of the core layer, a plurality of insulating layers disposed on the one side and the other side of the core layer, and a plurality of via layers disposed on the one side and the other side of the core layer. The printed circuit board has a wiring region and a dummy region surrounding at least a portion outside of the wiring region on a plane. A metal ratio in the dummy region on one side and a metal ratio in the dummy region on the other side are different from each other.