Abstract: A display device comprising: first and second pixels; a first data line connected to the first pixel and configured to have data voltages applied thereto; and a second data line connected to the second pixel, the second data line being adjacent to the first data line, and configured to have the data voltages applied thereto, wherein the first data line includes a 1A-th data line which is in a first data layer, and the second data line includes a 2B-th data line which is in a second data layer different from the first data layer.

Abstract: A semiconductor device includes a substrate, an oxide semiconductor film on the substrate, a first gate structure on the oxide semiconductor film and a contact that is in contact with the oxide semiconductor film, the contact being disposed on a boundary surface with the oxide semiconductor film, and including a metal oxide film that includes a transition metal.

Abstract: The present invention relates to: an aqueous (a water-soluble) antiseptic composition having improved antibacterial persistence comprising chlorhexidine or a derivative thereof and a silicon-based emulsifier; and a fabric type antiseptic comprising same. As the chlorhexidine or the derivative thereof is highly soluble and stable and well dispersed in an aqueous phase, the composition can exhibit excellent absorption efficiency when applied onto the skin and can ultimately maximize a cumulative emission amount of chlorhexidine or the derivative thereof. In addition, the use of the polyglyceryl fatty acid ester allows sustained release of chlorhexidine or the derivative thereof, thereby sustaining the antibacterial effect for a long time.

Abstract: Provided is a positive electrode active material for a secondary battery which includes a composite coating layer formed on a surface of lithium composite transition metal oxide particles, wherein the composite coating layer includes a ferroelectric material and a boron-based oxide containing boron.

Abstract: The present invention relates to a target gene-detecting device and a method for detecting a target gene. According to an aspect, a target gene-detecting device can be conveniently fabricated at low cost by employing a porous substrate or a method for detecting a target gene allows the pretreatment of a sample, the extraction of a nucleic acid, the amplification of a nucleic acid, and the detection of a target gene to be conducted at high accuracy and specificity in an integral system, with no contamination plausibility and can be thus useful for gene inspection.

Abstract: A semiconductor memory includes a bit line extending in a first direction, first and second active patterns, which are alternately disposed in the first direction and on the bit line, and each of which includes a horizontal portion and a vertical portion, first word lines disposed on the horizontal portions of the first active patterns to cross the bit line, second word lines disposed on the horizontal portions of the second active patterns to cross the bit line, and an intermediate structure provided in a first gap region between the first and second word lines or in a second gap region between the vertical portions of the first and second active patterns. The first and second active patterns, which are adjacent to each other, may be disposed to be symmetric with respect to each other.

Abstract: The present invention relates to an artificially manipulated unsaturated fatty acid biosynthesis-associated factor and use thereof to increase the content of a specific unsaturated fatty acid of a plant body. More particularly, the present invention relates to a system capable of artificially controlling unsaturated fatty acid biosynthesis and a plant body produced thereby, which include an artificially manipulated unsaturated fatty acid biosynthesis-associated factor to control unsaturated fatty acid biosynthesis and a composition capable of artificially manipulating the factor. In a specific aspect, the present invention relates to artificially manipulated unsaturated fatty acid biosynthesis-associated factors such as FAD2, FAD3, FADE, FAD7 and FAD8 and/or an unsaturated fatty acid biosynthesis controlling system by an expression product thereof.

Abstract: A semiconductor memory device with improved performance by improving interface characteristics while reducing a leakage current, and a method for fabricating the same are provided. The semiconductor memory device includes a conductive line on a substrate, a first interlayer insulating layer exposing the conductive line and defining a channel trench on the substrate, a channel layer extending along a bottom and side surface of the channel trench, a first gate electrode and a second gate electrode spaced apart from each other in the channel trench, a first gate insulating layer between the channel layer and the first gate electrode, and a second gate insulating layer between the channel layer and the second gate electrode. The channel layer includes a first oxide semiconductor layer and a second oxide semiconductor layer sequentially stacked on the conductive line. The first oxide semiconductor layer has a greater crystallinity than the second oxide semiconductor layer.

Abstract: A positive electrode active material contains a lithium transition metal oxide in the form of a secondary particle in which primary particles are aggregated, wherein a zirconium-containing coating film is formed on the surface of the lithium transition metal oxide secondary particle and at the interface between the primary particles present inside the secondary particle. A method of making the positive electrode active material is also provided.

Abstract: The present invention relates to a hydrosilylation-curable silicone composition comprising: a maleate compound, and a hydrosilylation inhibitor other than the maleate compound, wherein the content of the maleate compound is in an amount of 50 to 6,000 ppm and the content of the hydrosilylation inhibitor is in an amount of 200 to 20,000 ppm, with respect to the present composition in terms of mass units, respectively. The hydrosilylation-curable silicone composition exhibits good storage stability, and can be cured to form a cured product that suffers no surface wrinkling.

Abstract: The present invention relates to an artificially engineered CRISPR/Cas9 system. More particularly, the present invention relates to an artificially engineered CRISPR enzyme having enhanced target specificity and a use of an artificially engineered CRISPR/Cas9 system including the same enzyme in genome and/or epigenome manipulation or modification, genome targeting, genome editing, and in vitro diagnosis, etc.

Abstract: A semiconductor memory device in which performance and reliability are improved, and a method for fabricating the same are provided. The semiconductor memory device includes a conductive line extending in a first direction on a substrate, an interlayer insulation film that includes a cell trench extending in a second direction intersecting the first direction, on the substrate, a first gate electrode and a second gate electrode that are spaced apart from each other in the first direction and each extend in the second direction, inside the cell trench, a channel layer that is inside the cell trench and is electrically connected to the conductive line, on the first gate electrode and the second gate electrode, and a gate insulation layer interposed between the first gate electrode and the channel layer, and between the second gate electrode and the channel layer.

Abstract: Disclosed are a point-of-care system and method, the system including: an aptamer-based diagnostic reagent; a diagnostic instrument for detecting a Raman signal through a Raman analysis technique; and a diagnostic kit to be operated on the basis of a lateral flow method, wherein blood and the diagnostic reagent are reacted so as to detect a Raman signal when the placement of the diagnostic kit is detected, thereby allowing the type of acute febrile illness to be identified.

Abstract: A semiconductor device includes an active pattern including a lower pattern and a plurality of sheet patterns; a gate structure disposed on the lower pattern and surrounding the plurality of sheet patterns; and a source/drain pattern filling a source/drain recess formed on one side of the gate structure. The source/drain pattern includes a first semiconductor pattern extending along the source/drain recess and contacting the lower pattern, a second and third semiconductor patterns sequentially disposed on the first semiconductor pattern, a lower surface of the third semiconductor pattern is disposed below a lower surface of a lowermost sheet pattern, a side surface of the third semiconductor pattern includes a planar portion, and a thickness of the second semiconductor pattern on the lower surface of the third semiconductor pattern is different from a thickness of the second semiconductor pattern on the planar portion of the side surface of the third semiconductor pattern.

Abstract: A semiconductor device including a substrate including an active pattern; a gate electrode crossing the active pattern; a source/drain pattern adjacent to one side of the gate electrode and on an upper portion of the active pattern; an active contact electrically connected to the source/drain pattern; and a silicide layer between the source/drain pattern and the active contact, the source/drain pattern including a body part including a plurality of semiconductor patterns; and a capping pattern on the body part, the body part has a first facet, a second facet on the first facet, and a corner edge defined where the first facet meets the second facet, the corner edge extending parallel to the substrate, the capping pattern covers the second facet of the body part and exposes the corner edge, and the silicide layer covers a top surface of the body part and a top surface of the capping pattern.

Abstract: According to one aspect of the present invention, a body part of a CID filter of a secondary battery has a main through-hole and an auxiliary through-hole defined therein. The auxiliary hole is positioned between a CID gasket and an area of the CID filter that is electrically connected to an electrode tab.

Abstract: A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.