Patents by Inventor Min-Hsiang Hsu

Min-Hsiang Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160032111
    Abstract: The present invention relates to provide an anticorrosive layer having a biomimetic surface nano microstructure and the application. The anticorrosive layer comprises a polymer and a nano-particle. Both of the nano-particle and the biomimetic surface nano microstructure are required for the anticorrosive layer to effectively enhance the anticorrosive performance.
    Type: Application
    Filed: September 3, 2014
    Publication date: February 4, 2016
    Inventors: Jui-Ming Yeh, Kung-Chin Chang, Chien-Hua Hsu, Wei-Fu Ji, Min-Hsiang Hsu, Hsin-I Lu, Mei-Chun Lai, Pei-Ju Liu, Tsao-Li Chuang, Yen Wei, Wei-Ren Liu, You-Rong Hsiao
  • Publication number: 20130276374
    Abstract: A sliding door is coupled to a casing having therein a receiving space, a port received in the receiving space, a first opening formed at the casing, and a first guide rail fixed to the casing to face the receiving space and positioned proximate to the first opening. The sliding door includes a frame body and a door body. The frame body is received in the receiving space and has a second guide rail, a resilient arm, and a second opening corresponding in position to the first opening. The door body is disposed between the casing and the frame body and slides along the first guide rail and the second guide rail to selectively block or unblock the first opening and the second opening. Accordingly, the sliding door structure is selectively opened or shut as needed, so as to protect the port.
    Type: Application
    Filed: June 18, 2012
    Publication date: October 24, 2013
    Inventors: MIN-HSIANG HSU, CHING-FENG HSIEH
  • Patent number: 8431001
    Abstract: An ion sensor includes: a conductive base structure including a substrate and an electrode film formed on the substrate; a plurality of ion-sensitive nanorods protruding from the electrode film; and an encapsulant enclosing the conductive base structure, surrounding the ion-sensitive nanorods, and formed with a window for exposing the ion-sensitive nanorods. Each of the ion-sensitive nanorods has a conductive core and an ion-sensitive layer formed on and enclosing the conductive core. The ion-sensitive material exhibits an ion selectivity of absorbing an ion of interest thereon for inducing a surface potential corresponding to concentration of the ion of interest.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: April 30, 2013
    Assignee: National Chiao Tung University
    Inventors: Peichen Yu, Bing-Mau Chen, Chia-Hua Chang, Min-Hsiang Hsu, Chan-Hung Huang, Chen-Hao Kuo
  • Publication number: 20120048733
    Abstract: An ion sensor includes: a conductive base structure including a substrate and an electrode film formed on the substrate; a plurality of ion-sensitive nanorods protruding from the electrode film; and an encapsulant enclosing the conductive base structure, surrounding the ion-sensitive nanorods, and formed with a window for exposing the ion-sensitive nanorods. Each of the ion-sensitive nanorods has a conductive core and an ion-sensitive layer formed on and enclosing the conductive core. The ion-sensitive material exhibits an ion selectivity of absorbing an ion of interest thereon for inducing a surface potential corresponding to concentration of the ion of interest.
    Type: Application
    Filed: March 4, 2011
    Publication date: March 1, 2012
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Peichen Yu, Bing-Mau Chen, Chia-Hua Chang, Min-Hsiang Hsu, Chan-Hung Huang, Chen-Hao Kuo
  • Publication number: 20100307592
    Abstract: A three-dimensional ITO electrode and the method of fabricating the same are disclosed. The three-dimensional ITO electrode of the present invention has a conductive layer and a plurality of ITO nanorods formed on the conductive layer, wherein the length range of the ITO nanorods can vary from 10 nm to 1500 nm. The best length is about 50 nm-200 nm for organic solar cells. When applied into organic optoelectronic devices such as organic solar cells and organic light-emitting diodes (OLEDs), the three-dimensional structure of the ITO electrode may increase the contact area to the active layer, thus improving the electric current collecting efficiency and uniformity of current spreading (flowing). Also, an evaporator, a solar cell comprising the above three-dimensional ITO electrode, and the method of fabricating the solar cell are disclosed.
    Type: Application
    Filed: September 21, 2009
    Publication date: December 9, 2010
    Applicant: National Chiao Tung University
    Inventors: Chia-Hua Chang, Pei-Chen Yu, Min-Hsiang Hsu, Kung-Hwa Wei, Ming-Shin Su