Patents by Inventor Min-Hsien Chen

Min-Hsien Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR FILLING TRENCH WITH METAL LAYER AND SEMICONDUCTOR STRUCTURE FORMED BY USING THE SAME
    Publication number: 20130214336
    Abstract: A method for filling a trench with a metal layer is disclosed. A deposition apparatus having a plurality of supporting pins is provided. A substrate and a dielectric layer disposed thereon are provided. The dielectric layer has a trench. A first deposition process is performed immediately after the substrate is placed on the supporting pins to form a metal layer in the trench, wherein during the first deposition process a temperature of the substrate is gradually increased to reach a predetermined temperature. When the temperature of the substrate reaches the predetermined temperature, a second deposition process is performed to completely fill the trench with the metal layer.
    Type: Application
    Filed: February 21, 2012
    Publication date: August 22, 2013
    Inventors: Chi-Mao Hsu, Hsin-Fu Huang, Min-Chuan Tsai, Chien-Hao Chen, Wei-Yu Chen, Chin-Fu Lin, Jing-Gang Li, Min-Hsien Chen, Jian-Hong Su