Abstract: Systems and methods are disclosed for identifying transitions within media content items. In one implementation, a processing device process a first media content item, the first media content item being associated with a transition, to identify one or more characteristics associated with the transition. The processing device processes a second media content item to identify at least one of the one or more characteristics at a chronological interval of the second media content item. The processing device receives a sponsored content item. The processing device provides, during a presentation of the second media content item, the sponsored content item at the chronological interval.

Abstract: A computer-implemented method for selecting representative frames for videos is provided. The method includes receiving a video and identifying a set of features for each of the frames of the video. The features including frame-based features and semantic features. The semantic features identifying likelihoods of semantic concepts being present as content in the frames of the video. A set of video segments for the video is subsequently generated. Each video segment includes a chronological subset of frames from the video and each frame is associated with at least one of the semantic features. The method generates a score for each frame of the subset of frames for each video segment based at least on the semantic features, and selecting a representative frame for each video segment based on the scores of the frames in the video segment. The representative frame represents and summarizes the video segment.

Abstract: Systems and methods are disclosed for identifying transitions within media content items. In one implementation, a processing device process a first media content item, the first media content item being associated with a transition, to identify one or more characteristics associated with the transition. The processing device processes a second media content item to identify at least one of the one or more characteristics at a chronological interval of the second media content item. The processing device receives a sponsored content item. The processing device provides, during a presentation of the second media content item, the sponsored content item at the chronological interval.

Abstract: A computer-implemented method for selecting representative frames for videos is provided. The method includes receiving a video and identifying a set of features for each of the frames of the video. The features including frame-based features and semantic features. The semantic features identifying likelihoods of semantic concepts being present as content in the frames of the video. A set of video segments for the video is subsequently generated. Each video segment includes a chronological subset of frames from the video and each frame is associated with at least one of the semantic features. The method generates a score for each frame of the subset of frames for each video segment based at least on the semantic features, and selecting a representative frame for each video segment based on the scores of the frames in the video segment. The representative frame represents and summarizes the video segment.

Abstract: A method of generating a moving thumbnail is disclosed. The method includes sampling video frames of a video item. The method further includes determining frame-level quality scores for the sampled video frames. The method also includes determining multiple group-level quality scores for multiple groups of the sampled video frames using the frame-level quality scores of the sampled video frames. The method further includes selecting one of the groups of the sampled video frames based on the multiple group-level quality scores. The method includes creating a moving thumbnail using a subset of the video frames that have timestamps within a range from the start timestamp to the end timestamp.

Abstract: A solution is provided for temporally segmenting a video based on analysis of entities identified in the video frames of the video. The video is decoded into multiple video frames and multiple video frames are selected for annotation. The annotation process identifies entities present in a sample video frame and each identified entity has a timestamp and confidence score indicating the likelihood that the entity is accurately identified. For each identified entity, a time series comprising of timestamps and corresponding confidence scores is generated and smoothed to reduce annotation noise. One or more segments containing an entity over the length of the video are obtained by detecting boundaries of the segments in the time series of the entity. From the individual temporal segmentation for each identified entity in the video, an overall temporal segmentation for the video is generated, where the overall temporal segmentation reflects the semantics of the video.

Abstract: The present invention provides a transistor comprising a substrate having a surface; a first deep well region in the substrate; a second deep well region in the substrate, isolated from and encircling the first deep well region; a first well region in the substrate and on the first deep well region; two second well regions in the second deep well region and respectively at two opposite sides of the first well region; a source region in the first well region and adjacent to the surface; two drain regions in the two second well regions respectively and adjacent to the surface; two gate structures on the surface, wherein each of the two gate structures is between the source region and one of the drain regions respectively; and a guard ring in the substrate encircling the second deep well region, and on the periphery of the transistor.

Abstract: A solution is provided for temporally segmenting a video based on analysis of entities identified in the video frames of the video. The video is decoded into multiple video frames and multiple video frames are selected for annotation. The annotation process identifies entities present in a sample video frame and each identified entity has a timestamp and confidence score indicating the likelihood that the entity is accurately identified. For each identified entity, a time series comprising of timestamps and corresponding confidence scores is generated and smoothed to reduce annotation noise. One or more segments containing an entity over the length of the video are obtained by detecting boundaries of the segments in the time series of the entity. From the individual temporal segmentation for each identified entity in the video, an overall temporal segmentation for the video is generated, where the overall temporal segmentation reflects the semantics of the video.

Abstract: The present invention provides a transistor comprising a substrate having a surface; a first deep well region in the substrate; a second deep well region in the substrate, isolated from and encircling the first deep well region; a first well region in the substrate and on the first deep well region; two second well regions in the second deep well region and respectively at two opposite sides of the first well region; a source region in the first well region and adjacent to the surface; two drain regions in the two second well regions respectively and adjacent to the surface; two gate structures on the surface, wherein each of the two gate structures is between the source region and one of the drain regions respectively; and a guard ring in the substrate encircling the second deep well region, and on the periphery of the transistor.

Abstract: A system and method of annotating an application, including obtaining input signals associated with a target application, wherein the input signals are obtained from a plurality of sources, obtaining first annotation data from the obtained input signals, generating second annotation data in a machine-understandable form based on the first annotation data, and associating the second annotation data with the target application.

Abstract: A computer-implemented method for selecting representative frames for videos is provided. The method includes receiving a video and identifying a set of features for each of the frames of the video. The features including frame-based features and semantic features. The semantic features identifying likelihoods of semantic concepts being present as content in the frames of the video. A set of video segments for the video is subsequently generated. Each video segment includes a chronological subset of frames from the video and each frame is associated with at least one of the semantic features. The method generates a score for each frame of the subset of frames for each video segment based at least on the semantic features, and selecting a representative frame for each video segment based on the scores of the frames in the video segment. The representative frame represents and summarizes the video segment.

Abstract: A high voltage device having Schottky diode includes a semiconductor substrate, a Schottky diode formed on the semiconductor substrate, at least a first doped region having a first conductive type formed in the semiconductor substrate and under the Schottky diode, and a control gate positioned on the semiconductor substrate. The control gate covers a portion of the Schottky diode and the first doped region positioned on the semiconductor substrate.

Abstract: The present invention provides a semiconductor device structure which integrates a lateral diffused metal oxide semiconductor (LDMOS) with a Schottky diode, including: a substrate, having a first conductivity type, a gate positioned on the substrate, a drain region formed in the substrate, the drain region having a second conductivity type complementary to the first conductivity type, a source region formed in the substrate, the source region having the second conductivity type, a high-voltage well region formed in the substrate, the high-voltage well region having a first conductivity type; a Schottky diode disposed on the substrate and disposed beside the LDMOS, wherein the semiconductor device structure is an asymmetric structure, and a deep well region disposed in the substrate and having the second conductivity type, wherein the LDMOS and the Schottky diode are all formed within the deep well region.

Abstract: A high voltage device having Schottky diode includes a semiconductor substrate, a Schottky diode formed on the semiconductor substrate, at least a first doped region having a first conductive type formed in the semiconductor substrate and under the Schottky diode, and a control gate positioned on the semiconductor substrate. The control gate covers a portion of the Schottky diode and the first doped region positioned on the semiconductor substrate.

Abstract: A high voltage device having a Schottky diode integrated with a MOS transistor includes a semiconductor substrate a Schottky diode formed on the semiconductor substrate, at least a first doped region having a first conductive type formed in the semiconductor substrate and under the Schottky diode, and a control gate covering a portion of the Schottky diode and the first doped region positioned on the semiconductor substrate.

Abstract: A transistor device and a manufacturing method thereof are provided. The transistor device includes a substrate, a first well, a second well, a shallow trench isolation (STI), a source, a drain and a gate. The first well is disposed in the substrate. The second well is disposed in the substrate. The STI is disposed in the second well. The STI has at least one floating diffusion island. The source is disposed in the first well. The drain is disposed in the second well. The electric type of the floating diffusion island is different from or the same with that of the drain. The gate is disposed above the first well and the second well, and partially overlaps the first well and the second well.

Abstract: A transistor device and a manufacturing method thereof are provided. The transistor device includes a substrate, a first well, a second well, a shallow trench isolation (STI), a source, a drain and a gate. The first well is disposed in the substrate. The second well is disposed in the substrate. The STI is disposed in the second well. The STI has at least one floating diffusion island. The source is disposed in the first well. The drain is disposed in the second well. The electric type of the floating diffusion island is different from or the same with that of the drain. The gate is disposed above the first well and the second well, and partially overlaps the first well and the second well.

Abstract: A high voltage device having a Schottky diode integrated with a MOS transistor includes a semiconductor substrate a Schottky diode formed on the semiconductor substrate, at least a first doped region having a first conductive type formed in the semiconductor substrate and under the Schottky diode, and a control gate covering a portion of the Schottky diode and the first doped region positioned on the semiconductor substrate.

Abstract: A power semiconductor device includes a P type silicon substrate; a deep N well in the P type silicon substrate; a P grade region in the deep N well; a P+ drain region in the P grade region; a first STI region in the P grade region; a second STI region in the P grade region, wherein the first and second STI region isolate the P+ drain region; a third STI region in the deep N well; a gate electrode overlying an area between the second and third STI regions and covering a portion of the second STI region; a gate dielectric layer between the gate electrode and the P type silicon substrate; a P well formed at one side of the third STI region; and a P+ source region in the P well.

Abstract: A power semiconductor device includes a P type silicon substrate; a deep N well in the P type silicon substrate; a P grade region in the deep N well; a P+ drain region in the P grade region; a first STI region in the P grade region; a second STI region in the P grade region, wherein the first and second STI region isolate the P+ drain region; a third STI region in the deep N well; a gate electrode overlying an area between the second and third STI regions and covering a portion of the second STI region; a gate dielectric layer between the gate electrode and the P type silicon substrate; a P well formed at one side of the third STI region; and a P+ source region in the P well.