Abstract: In conventional wireless communication systems, only a single transmit precoding matrix indicator (TPMI) with a single associated sounding reference signal (SRS) resource indicator (SRI) is configured/activated in downlink control signal (DCI) for retransmission of data. To enable better performance in retransmission, the UE may dynamically turn on/off/switch panels for retransmissions.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a wireless communication device may receive an indication of a first transmit power configuration and a second transmit power configuration for a physical uplink shared channel (PUSCH) communication. The wireless communication device may transmit, using a first transmit power that is based at least in part on the first transmit power configuration, a first portion of the PUSCH communication in a full-duplex portion of a time-frequency resource. The wireless communication device may transmit, using a second transmit power that is based at least in part on the second transmit power configuration, a second portion of the PUSCH communication in a non-full-duplex portion of the time-frequency resource. Numerous other aspects are provided.

Abstract: Methods, systems, and devices for wireless communication are described. A first wireless device may transmit one or more signals to a second wireless device using an antenna panel including antenna elements that are arranged in a hexagonal configuration. The signals may be transmitted using one or more directional beams for multiple-input multiple-output communications with the second wireless device, the directional beams generated based on the antenna elements in the hexagonal configuration. The first wireless device may receive a signal from the second wireless device, and in some cases, the first wireless device may transmit one or more reference signals via the one or more directional beams, the reference signals associated with a set of two or more antenna elements of the antenna panel of the first wireless device. The second wireless device may perform measurements of the reference signals and transmit a measurement report to the first wireless device.

Abstract: A bonded assembly may be formed by providing at least a first packaging substrate in a low-oxygen ambient; providing at least a first semiconductor package in the low-oxygen ambient; performing a first plasma package-treatment process on the first semiconductor package in the low-oxygen ambient by directing at least one first plasma jet to first solder material portions bonded to the first semiconductor package; and bringing the first solder material portions onto, or in proximity to, first substrate-side bonding structures located on the first packaging substrate while the at least one first plasma jet is directed to the first solder material portions. The first substrate-side bonding structures are treated with the first plasma jet. The first semiconductor package is bonded to the first packaging substrate while, or after, the first substrate-side bonding structures are treated with the first plasma jet.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive, from a base station, a configuration of a beam report associated with a set of base station transmit beams, the set of base station transmit beams being directed to the UE via a backscatter link reflected by a backscatter device. The UE may transmit, to the base station, the beam report based at least in part on the configuration of the beam report, the beam report corresponding to the backscatter link. Numerous other aspects are described.

Abstract: A laptop computer with a detachable touchpad module includes a housing, a locking hook, and a touchpad module. The housing has a first surface and a second surface opposite to each other. The first surface is an external surface of the housing, and the second surface is an internal surface of the housing. The locking hook is freely pivoted to the housing and located at the second surface. The touchpad module has a locking hole. When the touchpad module is assembled to the first surface, the locking hole penetrates the housing and is protruded out of the second surface, and the locking hook is locked with the locking hole.

Abstract: Methods, systems, and devices for wireless communications are described. A user equipment (UE) may receive, from a base station, a first indication that the UE is within a distance threshold (e.g., in the near field) of multiple-in multiple-out (MIMO) communications from the base station. The UE may communicate with the base station via signaling including a second indication of antenna panel information of at least one of the UE or the base station, the communication based on the UE being within the distance threshold. The UE may receive, from the base station, a first beamformed signal on one or more first beams within the distance threshold, and the CE may receive, from the base station, one or more second beamformed signals on a second beam within the distance threshold, the second beam based on a channel response matrix that is estimated from the second indication and the first beamformed signal.

Abstract: A bonded assembly may be formed by: providing a substrate and a semiconductor chip in a low-oxygen ambient having an oxygen partial pressure that is lower than 17 kPa; disposing the semiconductor chip on the substrate; performing a plasma treatment process on a copper-containing surface of a chip bonding pad on the semiconductor chip in the low-oxygen ambient by directing a plasma jet to the chip bonding pad; and attaching a bonding wire to the semiconductor chip and to the substrate such that a first end of the bonding wire is attached to the copper-containing surface and a second end of the bonding wire is attached to a substrate bonding pad on the substrate.

Abstract: A bonded assembly may be formed by providing a wafer comprising at least a first packaging substrate and a second packaging substrate in a low-oxygen ambient; performing a first plasma package-treatment process on the first semiconductor package in the low-oxygen ambient while performing a first substrate-treatment process on the first packaging substrate in a low-oxygen ambient having an oxygen partial pressure that is lower than 17 kPa; and performing a second plasma package-treatment process on the second semiconductor package while performing a second substrate-treatment process on the second packaging substrate and while bonding the first semiconductor package to the first packaging substrate.

Abstract: This disclosure provides a shuttle vehicle control method and apparatus, a shuttle vehicle, and a storage medium. The method includes controlling a first distance measurement device and a second distance measurement device to respectively measure a first distance and a second distance from a carrying target, and determining whether it is able to perform goods processing based on a result of respectively performing first comparison processing on the first distance and the second distance with a target normal distance threshold; and in a state of determining that it is unable to perform goods processing, respectively performing second comparison processing on the first distance and the second distance with a deviation correction distance threshold, and determining whether the shuttle vehicle is controlled to perform deviation correction processing based on a second comparison processing result.

Abstract: The present disclosure provides a high crack threshold curable composition comprising at least one polysiloxane resin, a solvent medium, and a crosslinker. The solvent medium may further include at least one solvent having a boiling point greater than 100° C. and at least one solvent having a boiling point less than 100° C.

Abstract: Aspects of the disclosure relate to wireless communication including mode division multiplexing of data and reference signals using different orbital angular momentum (OAM) modes. An OAM transmitter may transmit a reference signal (RS) configuration information to an OAM receiver that indicates radio resources for a plurality of OAM modes. The OAM transmitter may further transmit data on a first OAM mode of the plurality of OAM modes using first radio resources of the radio resources indicated by the RS configuration information. The OAM transmitter may further transmit a reference signal on a second OAM mode of the plurality of OAM modes using the first radio resources of the radio resources indicated by the RS configuration information. The OAM receiver may receive the data on the first OAM mode and the reference signal on the second OAM mode. Other aspects, embodiments, and features are also claimed and described.

Abstract: A pixel reading device, which includes a first capacitor, a second capacitor, a voltage generating circuit, and an analog front-end (AFE) circuit, is provided. A first terminal of the first capacitor is coupled to a fingerprint sensing pixel to receive a sensing voltage. A first terminal of the second capacitor is coupled to a second terminal of the first capacitor. The voltage generating circuit provide a compensation voltage to a second terminal of the second capacitor. During a sensing period of the fingerprint sensing pixel, the compensation voltage is at an initial level. During a level reading period of the fingerprint sensing pixel, the compensation voltage is pulled up from the initial level to a compensation level to compensate a common mode component of the sensing voltage. An input terminal of the AFE circuit is coupled to the second terminal of the first capacitor.

Abstract: A source/drain region of a semiconductor device is formed using an epitaxial growth process. In an embodiment a first step comprises forming a bulk region of the source/drain region using a first precursor, a second precursor, and an etching precursor. A second step comprises cleaning the bulk region with the etchant along with introducing a shaping dopant to the bulk region in order to modify the crystalline structure of the exposed surfaces. A third step comprises forming a finishing region of the source/drain region using the first precursor, the second precursor, and the etching precursor.

Abstract: Certain aspects of the present disclosure provide techniques for a user equipment (UE) to determine channel state information (CSI) to feedback to a base station (BS) in a full-duplex wireless communications system while considering UE-to-UE interference and for the BS to configure the UE to provide the CSI to the BS. In an exemplary method, a UE receives, from a base station (BS) in a full-duplex communications system, a channel state information (CSI) report configuration including at least a first indicator of a first associated set of sounding reference signal (SRS) resources; and transmits to the BS a CSI report including CSI and zero or more second indicators of sets of measured SRS resources.

Abstract: A light emitting diode includes a substrate and a semiconductor light emitting stack layer. The semiconductor light emitting stack layer is disposed on the substrate, and the substrate has four sidewalls, an upper surface, and a lower surface. At least one sidewall is provided with a first laser dotting region and a second laser dotting region. The first laser dotting region includes first laser dots, and the second laser dotting region includes second laser dots. A stress crack is present between the first laser dotting region and the second laser dotting region. A first distance D1 is present between the first laser dotting region and the stress crack, a second distance D2 is present between the second laser dotting region and the stress crack, and 0.7D2<D1<1.3D2.

Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes a substrate having a first active region, a second active region, and a word line connecting region between the first active region and the second active region, a first gate pattern extending along a first direction from the first active region to the second active region, a second gate pattern extending along the first direction from the first active region to the second active region, a first magnetic tunneling junction (MTJ) between the first gate pattern and the second pattern and within the word line connecting region, and a second MTJ between the first gate pattern and the second gate pattern in the first active region. Preferably, top surfaces of the first MTJ and the second MTJ are coplanar.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a first user equipment (UE) may transmit a first set of periodic signals associated with a first set of spatial relationships in a first set of periodic signal transmission occasions associated with a first periodicity; and transmit one or more second sets of periodic signals with a second set of spatial relationships in one or more second sets of periodic signal transmission occasions associated with a second periodicity, wherein the one or more second sets of periodic signal transmission occasions occur before a next first set of the periodic signal transmission occasions. Numerous other aspects are provided.

Abstract: A semiconductor device includes a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, a MTJ on the MRAM region, a metal interconnection on the MTJ, and a blocking layer on the metal interconnection. Preferably, the blocking layer includes a stripe pattern according to a top view and the blocking layer could include metal or a dielectric layer.

Abstract: A source/drain region of a semiconductor device is formed using an epitaxial growth process. In an embodiment a first step comprises forming a bulk region of the source/drain region using a first precursor, a second precursor, and an etching precursor. A second step comprises cleaning the bulk region with the etchant along with introducing a shaping dopant to the bulk region in order to modify the crystalline structure of the exposed surfaces. A third step comprises forming a finishing region of the source/drain region using the first precursor, the second precursor, and the etching precursor.