Abstract: The present invention relates to a method for isothermal amplification of nucleic acids and a method for detecting nucleic acids, which comprises characterized in simultaneous isothermal amplification of nucleic acids and a signal probe to a method for isothermal amplification of target nucleic acids using an external primer set and RNA/DNA hybrid primer set, and a method for detecting amplification products by amplifying nucleic acids and a signal probe simultaneously using an external primer set, RNA-DNA hybrid primer set and DNA-RNA-DNA hybrid probe.

Abstract: A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a substantially planarized top surface for the semiconductor device.

Abstract: An optical network system includes a central office (CO) comprising an A-band BLS to be injected into a light source for downstream signals, an A-band BLS coupling device for coupling the A-band BLS, a first wavelength-division multiplexer/demultiplexer connected to the A-band BLS coupling device for multiplexing/demultiplexing, and a plurality of first optical transceivers connected to the first wavelength-division multiplexer/demultiplexer; a remote node (RN) comprising a B-band BLS coupling device and a second wavelength-division multiplexer/demultiplexer connected to the B-band BLS coupling device for multiplexing/demultiplexing, and being connected to the CO through an optical fiber; and a plurality of optical network terminations (ONTs) including a plurality of second optical transceivers connected to the second wavelength-division multiplexer/demultiplexer, wherein either the RN or one of the plurality of ONTs further includes a B-band BLS to be injected to a light source for upstream signals.

Abstract: In a high voltage integrated circuit, a low voltage region is separated from a high voltage region by a junction termination. A bipolar transistor in the high voltage region is surrounded by an isolation region having a low doping concentration. The use of a low-doped isolation region increases the size of an active region without reduction of a breakdown voltage.

Abstract: In accordance with the present invention, a metal oxide semiconductor (MOS) transistor has a substrate of a first conductivity type. A drift region of a second conductivity type is formed over the substrate. A body region of the first conductivity type is formed in the drift region. A source region of the second conductivity is formed in the body region. A gate extends over a surface portion of the body region and overlaps each of the source region and the body region such that the surface portion of the body region forms a channel region of the transistor. A drain region of the second conductivity type is formed in the drift region. The drain region is laterally spaced from the source region a first predetermined distance. A first buried layer of the first conductivity type extends into the substrate and the drift region. The first buried layer laterally extends between the source and drain regions.

Abstract: A high voltage lateral Double diffused Metal Oxide Semiconductor (DMOS) transistor includes a plurality of well regions of a first conductivity type formed to be spaced out within a well region of a second conductivity type between a channel region of the first conductivity type and a drain region of the second conductivity type. Most current is carried through some portions of the well region of the second conductivity type in which the well regions of the first conductivity do not appear so that the current carrying performance of the device is improved. When a bias voltage is applied to the drain region, the well region of the second conductivity type is completely depleted at other portions where the well region of the second conductivity type and the well regions of the first conductivity type alternately appear so that the breakdown voltage of the device can be increased.

Abstract: Disclosed is a process for preparing arrays of oligopeptide nucleic acid probes immobilized on a solid matrix by employing polymeric photoacid generator. Arrays of peptide nucleic acid probes of the invention are prepared by the steps of: (i) derivatizing the surface of a solid matrix with aminoalkyloxysilane in alcohol and attaching a linker with acid-labile protecting group on the solid matrix; (ii) coating the solid matrix with polymeric photoacid generator(PAG); (iii) exposing the solid matrix thus coated to light to generate acid for eliminating acid-labile protecting group; (iv) washing the solid matrix with alkaline solution or organic solvent and removing residual polymeric photoacid generator; and, (v) attaching a monomeric peptide nucleic acid with acid-labile protecting group to the solid matrix, and repeating the previous Steps of (ii) to (v).

Abstract: In accordance with the present invention, a metal oxide semiconductor (MOS) transistor has a substrate of a first conductivity type. A drift region of a second conductivity type is formed over the substrate. A body region of the first conductivity type is formed in the drift region. A source region of the second conductivity is formed in the body region. A gate extends over a surface portion of the body region and overlaps each of the source region and the body region such that the surface portion of the body region forms a channel region of the transistor. A drain region of the second conductivity type is formed in the drift region. The drain region is laterally spaced from the source region a first predetermined distance. A first buried layer of the first conductivity type extends into the substrate and the drift region. The first buried layer laterally extends between the source and drain regions.

Abstract: A high voltage lateral Double diffused Metal Oxide Semiconductor (DMOS) transistor includes a plurality of well regions of a first conductivity type formed to be spaced out within a well region of a second conductivity type between a channel region of the first conductivity type and a drain region of the second conductivity type. Most current is carried through some portions of the well region of the second conductivity type in which the well regions of the first conductivity do not appear so that the current carrying performance of the device is improved. When a bias voltage is applied to the drain region, the well region of the second conductivity type is completely depleted at other portions where the well region of the second conductivity type and the well regions of the first conductivity type alternately appear so that the breakdown voltage of the device can be increased.

Abstract: In a high voltage integrated circuit, a low voltage region is separated from a high voltage region by a junction termination. A bipolar transistor in the high voltage region is surrounded by an isolation region having a low doping concentration. The use of a low-doped isolation region increases the size of an active region without reduction of a breakdown voltage.

Abstract: Disclosed is a process for preparing arrays of oligopeptide nucleic acid probes immobilized on a solid matrix by employing polymeric photoacid generator. Arrays of peptide nucleic acid probes of the invention are prepared by the steps of: (i) derivatizing the surface of a solid matrix with aminoalkyloxysilane in alcohol and attaching a linker with acid-labile protecting group on the solid matrix; (ii) coating the solid matrix with polymeric photoacid generator(PAG); (iii) exposing the solid matrix thus coated to light to generate acid for eliminating acid-labile protecting group; (iv) washing the solid matrix with alkaline solution or organic solvent and removing residual polymeric photoacid generator; and, (v) attaching a monomeric peptide nucleic acid with acid-labile protecting group to the solid matrix, and repeating the previous Steps of (ii) to (v).

Abstract: The present invention relates to a process for preparing arrays of oligopeptide nucleic acid probes immobilized on a solid matrix by employing polymeric photoacid generator. Arrays of peptide nucleic acid probes of the invention are prepared by the steps of: (i) derivatizing the surface of a solid matrix with aminoalkyloxysilane in alcohol and attaching a linker with acid-labile protecting group on the solid matrix; (ii) coating the solid matrix with polymeric photoacid generator (PAG); (iii) exposing the solid matrix thus coated to light to generate acid for eliminating acid-labile protecting group; (iv) washing the solid matrix with alkaline solution or organic solvent and removing residual polymeric photoacid generator; and, (v) attaching a monomeric peptide nucleic acid with acid-labile protecting group to the solid matrix, and repeating the previous Steps of (ii) to (v).

Abstract: Disclosed is a process for preparing optically active (−)pyridobenzoxazine carboxylic acid derivative and pharmaceutically acceptable salt thereof by employing a starting material of (+)ethyl 2-(4-chloro-5-fluoro-2-halo-3-nitobenzoyl)-3-[(1-hydroxypropy-2(s)-yl)amino]acrylate. According to the present invention, optically active (−)pyridobenzoxazine carboxylic acid derivative can be manufactured from low-priced 4-chloro-5-fluorobenzoic acid derivative in a simple and economical manner.

Abstract: A power DMOS transistor having an improved current driving capability and improved reliability is provided. A fabrication method thereof is also provided. The DMOS transistor includes a semiconductor substrate having a first conductivity type and a semiconductor region having a second conductivity type formed on the semiconductor substrate. A drain having a second conductivity type is formed on the semiconductor region. A high-concentration buried impurity layer having a second conductivity type is formed on the semiconductor region under the drain. A body region having a first conductivity type is formed in the semiconductor substrate spaced a predetermined distance from the semiconductor region. A source having a second conductivity type is formed on the body region. A gate electrode is formed on the semiconductor substrate having a gate insulative film formed thereon. A source electrode and a drain electrode coupled respectively to the source and the drain are formed on the resultant structure.

Abstract: The present invention provides a method of preparing ortho-difluorobenzene derivatives, which comprises (a) providing a mixture of cyclohexenes by reacting chlorotrifluoroethylene (CTFE) and 1.3-diene in a flow reactor and distilling the resultant, and (b) dehydrohalogenating the mixture of cyclohexenes with a phase transition catalyst in :he presence of alkali metal hydroxide at temperature range of 40 to 150.degree. C. without using any organic solvent. The distillate having low boiling point, which is obtained during distillation of the resultant, is recycled into the flow reactor. The present invention also provides a method of preparing 2-chloro-4,5-difluorobenzoic acid, which comprises (a) providing a mixture of 4-chloro-1-methyl-4,5,5-trifluorocyclohexene and 5-chloro-1-methyl-4,4,5-trifluorocyclohexene by reacting chlorotrifluoroethylene (CTFE) and isoprene and distilling the resultant.

Abstract: The jineol extracted from scolopendra subspinipes is represented as the following formula (I): ##STR1## The jineol is obtained from scolopendra subspinipes by extracting scolopendra subspinipes with a solvent, separating an activating portion from the extracted liquid with an organic solvent, and purifying an anticancerous activating portion from the activating portion by chromatography.The jineol derivatives prepared from the jineol extracted scolopendra subspinipes are represented as the following formula (II): ##STR2## wherein each R.sub.1 and R.sub.2, independently of each other, is a hydrogen; a lower alkyl group of C.sub.1 to C.sub.6 ; a cycloalkyl group of C.sub.5 to C.sub.7 having a substituting group; an alkyl group of C.sub.1 to C.sub.4 having a phenyl group with one to three substituting groups; a lower alkyl group of C.sub.1 to C.sub.6 having a hydroxy, an alkoxy having C.sub.1 to C.sub.5, or an aryloxy; a lower acyl group of C.sub.1 to C.sub.7 having a hydroxy, an alkoxy having C.sub.1 to C.sub.