Abstract: A camera device comprises: a moving portion including a lens; a fixed portion coupled to the moving portion; a plate arranged between the moving portion and the fixed portion; and an adjuster which adjusts the movement of the moving portion. The adjuster comprises an elastic member, an adjusting member, and a body. The body comprises a base, a first sidewall extending from the base and coming into contact with the fixed portion, and a second sidewall extending from the base and coming into contact with the moving portion.

Abstract: This disclosure generally relates to a method for manufacturing a Group III-nitride semiconductor light emitting structure. In particular, it relates to a method for manufacturing a Group III-nitride semiconductor light emitting structure capable of shifting the emission wavelength towards to a longer wavelength through an appropriate barrier (the Group III-nitride semiconductor is composed of a compound of Al(x)Ga(y)In(1-x-y)N (0?x?1, 0?y?1, 0?x+y?1)).

Abstract: A semiconductor memory device includes a first stacked structure, a first supporter layer, a second stacked structure, a block cut structure, and a second supporter layer on the second stacked structure and separated by a second cut pattern. The first stacked structure includes a first and second stack, the second stacked structure includes a third stack separated by the block cut structure and a fourth stack, the first supporter layer is on the first stack and the second stack, the second supporter layer is on the third stack and the fourth stack, the first cut pattern includes a first connection on the block cut structure and connecting the first supporter layer and the second stack, and the second cut pattern of the second supporter layer includes a second connection on the block cut structure and connecting the second supporter layer placed on the third stack and the fourth stack.

Abstract: A semiconductor device and electronic system, the device including a cell structure stacked on a peripheral circuit structure, wherein the cell structure includes a first interlayer dielectric layer and first metal pads exposed at the first interlayer dielectric layer and connected to gate electrode layers and channel regions, the peripheral circuit structure includes a second interlayer dielectric layer and second metal pads exposed at the second interlayer dielectric layer and connected to a transistor, the first metal pads include adjacent first and second sub-pads, the second metal pads include adjacent third and fourth sub-pads, the first and third sub-pads are coupled, and a width of the first sub-pad is greater than that of the third sub-pad, and the second sub-pad and the fourth sub-pad are coupled, and a width of the fourth sub-pad is greater than that of the second sub-pad.

Abstract: The present invention relates to a pharmaceutical composition for preventing and/or treating inflammatory disease, the composition comprising a pyrrolopyridine-derivative compound as an active ingredient; the compound represented by Chemical Formula 1 according to the present invention, enantiomers thereof or pharmaceutically acceptable salts thereof, which have excellent inhibitory activity against not only protein kinases but also inflammatory factors and inflammatory cytokines; therefore a pharmaceutical composition comprising the same as an active ingredient may be useful in prevention, treatment and/or improvement of inflammatory disease, in particular but not limited to inflammatory bowel disease, rheumatoid arthritis, or lupus.

Abstract: According to the present invention, a method for building and deploying an information leakage prevention application based on a container may include the steps of: under a container environment, installing and configuring packages of an application for information leakage prevention under an application installation directory and building an image according to the creation of a deployment image for the application; and deploying the application using the deployment image generated according to image building.

Abstract: A semiconductor memory device includes a first semiconductor chip and a second semiconductor chip. Each semiconductor chip of the first and second semiconductor chips may include a cell array region and a peripheral circuit region. The cell array region may include an electrode structure including electrodes sequentially stacked on a body conductive layer and vertical structures extending through the electrode structure and connected to the body conductive layer. The peripheral circuit region may include a residual substrate on the body conductive layer and on which a peripheral transistor is located. A bottom surface of the body conductive layer of the second semiconductor chip may face a bottom surface of the body conductive layer of the first semiconductor chip.

Abstract: The invention relates to the use of carboxylic acid during the preparation of precipitated silica or a suspension of precipitated silica and to the precipitated silicas thus obtained, particularly with low water uptake, which can be used, for example, as a reinforcing filler in silicon matrices.

Abstract: An antenna apparatus includes: a parabolic reflector; a dielectric support pedestal; a sub-reflector connected to an upper part of the dielectric support pedestal; and a waveguide connected to a lower part of the dielectric support pedestal, wherein the parabolic reflector has a curved surface in which a ratio of a focal length to a diameter is greater than a preset value, and at least one corrugation configured to suppress a cross polarization is formed in a region of the dielectric support pedestal.

Abstract: A semiconductor memory device includes a first substrate including a first region and a second region, a stacked structure only on the first region of the first substrate among the first region and the second region of the first substrate, the stacked structure including word lines, an interlayer insulating film covering the stacked structure, a dummy conductive structure inside the interlayer insulating film, the dummy conductive structure extending through the stacked structure to contact the first substrate, and a plate contact plug inside the interlayer insulating film, the plate contact plug being connected to the second region of the first substrate, and a height of an upper surface of the dummy conductive structure being greater than a height of an upper surface of the plate contact plug relative to an upper surface of the first substrate.

Abstract: The present invention provides an optical filter for its use. In the present invention, it is possible to provide an optical filter that effectively blocks ultraviolet ray and infrared ray and exhibits high transmittance in visible light. Furthermore, it is possible to provide an optical filter where the transmission characteristics are stably maintained even when an incident angle is changed. Moreover, it is possible to provide an optical filter that does not exhibit problems such as ripple or petal flare.

Abstract: The present invention provides an optical filter for its use. In the present invention, it is possible to provide an optical filter that effectively blocks ultraviolet ray and infrared ray and exhibits high transmittance in visible light. Furthermore, it is possible to provide an optical filter where the transmission characteristics are stably maintained even when an incident angle is changed. Moreover, it is possible to provide an optical filter that does not exhibit problems such as ripple, petal flare, and curl.

Abstract: The provided is an optical filter for its use. In the present invention, it is possible to provide an optical filter that effectively blocks ultraviolet ray and infrared ray and exhibits high transmittance in visible light. Furthermore, it is possible to provide an optical filter where the transmission characteristics are stably maintained even when an incident angle is changed. Moreover, it is possible to provide an optical filter that does not exhibit problems such as ripple and petal flare, and thus to provide the optical filter with excellent durability.

Abstract: A semiconductor memory device includes a first stacked structure, a first supporter layer, a second stacked structure, a block cut structure, and a second supporter layer on the second stacked structure and separated by a second cut pattern. The first stacked structure includes a first and second stack, the second stacked structure includes a third stack separated by the block cut structure and a fourth stack, the first supporter layer is on the first stack and the second stack, the second supporter layer is on the third stack and the fourth stack, the first cut pattern includes a first connection on the block cut structure and connecting the first supporter layer and the second stack, and the second cut pattern of the second supporter layer includes a second connection on the block cut structure and connecting the second supporter layer placed on the third stack and the fourth stack.

Abstract: The present invention relates to a power module and a method of manufacturing the same. A power module according to one embodiment of the present invention includes a power module including a substrate a sealing member disposed to cover the substrate, a heatsink bonded to one surface of the substrate, a stepped bonding portion protruding to be stepped from one surface of the heatsink toward the substrate, and a bonding member disposed between and sinter-bonded to the stepped bonding portion and the substrate.

Abstract: A semiconductor device includes a gate stack structure including insulating patterns and conductive patterns which are alternately stacked, a first separation structure penetrating the gate stack structure, a second separation structure penetrating the gate stack structure and being adjacent to the first separation structure, first and second memory channel structures penetrating the gate stack structure and disposed between the first separation structure and the second separation structure, a first bit line overlapping with the first and second memory channel structures and electrically connected to the first memory channel structure, and a second bit line overlapping with the first and second memory channel structures and the first bit line and electrically connected to the second memory channel structure.

Abstract: A semiconductor memory device includes a gate stack structure including insulating layers, a lower selection line and word lines, the word lines including a first word line adjacent to the lower selection line and a second word line on the first word line, a memory channel structure penetrating the gate stack structure, a plurality of first contact plugs electrically connected to the first word line, a plurality of second contact plugs electrically connected to the second word line, a first conductive line connected to the plurality of first contact plugs, and a second conductive line connected to one of the plurality of second contact plugs.

Abstract: A three-dimensional semiconductor memory device may include horizontal patterns disposed on a peripheral circuit structure and spaced apart from each other, memory structures provided on the horizontal patterns, respectively, each of the memory structures including a three-dimensional arrangement of memory cells. Penetrating insulating patterns and separation structures may isolate the horizontal patterns from one another. Through vias may extend through the penetrating insulating patterns to connect logic circuits of the peripheral circuit structure to the memory structure.

Abstract: An automated method for generating a prosthesis from a 3D scan data, the method includes automatically extracting tooth information of a tooth included in the 3D scan data from the 3D scan data, automatically extracting a margin line of a prepared tooth, generating a plurality of two dimensional (“2D”) images including the prepared tooth and an adjacent tooth adjacent to the prepared tooth, automatically generating a 3D temporary prosthesis data based on the plurality of 2D images and deforming a single tooth model corresponding to the prepared tooth using the margin line and the 3D temporary prosthesis data to generate a 3D prosthesis data.

Abstract: The present invention provides methods for treating or ameliorating metabolic diseases, cholestatic liver diseases, or organ fibrosis, which comprises administering to a subject a therapeutically effective amount of a pharmaceutical composition comprising an isoxazole derivative, a racemate, an enantiomer, or a diastereoisomer thereof, or a pharmaceutically acceptable salt of the derivative, the racemate, the enantiomer, or the diastereoisomer.