Abstract: The invention is in the field of distributed Raman amplification for digital and analog transmission applications and other applications, e.g., instrumentation and imaging applications, including HFC-CATV applications. In particular, the invention uses a high power broadband source of amplified spontaneous emission (ASE) as the Raman pump source for improved system performance. The invention also includes methods for constructing such a high-power broadband Raman pump.

Abstract: An intracavity resonant Fabry-Perot saturable absorber (R-FPSA) induces modelocking in a laser such as a fiber laser. An optical limiter such as a two photon absorber (TPA) can be used in conjunction with the R-FPSA, so that Q-switching is inhibited, resulting in laser output that is cw modelocked. By using both an R-FPSA and a TPA, the Q-switched modelocked behavior of a fiber laser is observed to evolve into cw modelocking.

Abstract: Disclosed is an automatically-activated wireless code symbol reading system comprising a bar code symbol reading mechanism contained within a hand-supportable housing having a manually-activatable data transmission switch. During symbol reading operations, the bar code symbol reading mechanism automatically generates a visible laser scanning pattern for repeatedly reading one or more bar code symbols on an object during a bar code symbol reading cycle, and automatically generating a new symbol character data string in response to each bar code symbol read thereby. During system operation, the user visually aligns the visible laser scanning pattern with a particular bar code symbol on an object (e.g. product, bar code menu, etc.) so that the bar code symbol is scanned, detected and decoded in a cyclical manner.

Abstract: The CAMP factor gene of Streptococcus uberis (S. uberis) is described, as well as the recombinant production of CAMP factor therefrom. CAMP factors can be used in vaccine compositions for the prevention and treatment of bacterial infections.

Abstract: Disclosed is an automatically-activated wireless code symbol reading system comprising a bar code symbol reading mechanism contained within a hand-supportable housing having a manually-activatable data transmission switch. During symbol reading operations, the bar code symbol reading mechanism automatically generates a visible laser scanning pattern for repeatedly reading one or more bar code symbols on an object during a bar code symbol reading cycle, and automatically generating a new symbol character data string in response to each bar code symbol read thereby. During system operation, the user visually aligns the visible laser scanning pattern with a particular bar code symbol on an object (e.g. product, bar code menu, etc.) so that the bar code symbol is scanned, detected and decoded in a cyclical manner.

Abstract: An automatically-activated wireless code symbol reading system comprising a hand-supportable housing having a manually-activatable data transmission switch under automatic communication range dependent control. When a bar code symbol is read, the bar code reader is located inside the predetermined RF data communication range of the system, then the symbol character data string, produced at substantially the same time as the manual activation of the data transmission switch, is transmitted to the base station over the wireless RF communication link. If the device is outside the range, then an audible and/or visual indication is automatically generated, and the packaged symbol character data string is packaged and transmitted to a data storage buffer aboard the bar code reader. Then when the bar code symbol reader is moved within the communication range of the system, the buffered/packaged symbol character data is automatically transmitted to the base station by the RF-based data communication link.

Abstract: Disclosed is an automatically-activated wireless code symbol reading system comprising a bar code symbol reading mechanism contained within a hand-supportable housing having a manually-activatable data transmission switch. During symbol reading operations, the bar code symbol reading mechanism automatically generates a visible laser scanning pattern for repeatedly reading one or more bar code symbols on an object during a bar code symbol reading cycle, and automatically generating a new symbol character data string in response to each bar code symbol read thereby. During system operation, the user visually aligns the visible laser scanning pattern with a particular bar code symbol on an object (e.g. product, bar code menu, etc.) so that the bar code symbol is scanned, detected and decoded in a cyclical manner.

Abstract: An intracavity resonant Fabry-Perot saturable absorber (R-FPSA) induces modelocking in a laser such as a fiber laser. An optical limiter such as a two photon absorber (TPA) can be used in conjunction with the R-FPSA, so that Q-switching is inhibited, resulting in laser output that is cw modelocked. By using both an R-FPSA and a TPA, the Q-switched modelocked behavior of a fiber laser is observed to evolve into cw modelocking.

Abstract: An efficient high power tunable laser source suitable for use in optical communications equipment and networks comprises an optically pumped VCSEL and a fiber amplifier for the laser output of said VCSEL, with VCSEL and the fiber amplifier being optically pumped by a common optical pump source.

Abstract: A device layout is disclosed for an ESD device for protecting NMOS high voltage transistors where the SCR protection device and the two NMOS transistors are integrated. The two NMOS transistors share an n-type doped drain (ndd) area which has implanted two n+ drains, one for each of the two transistors and a p+ diffusion separates the two n+ drains. Furthermore, the ndd area has implanted an n-well which extends from halfway under the first n+ drain to halfway under the second n+ drain. In addition, the depth of the n-well exceeds the depth of the ndd area. The added p+ diffusion together with the ndd area and the p-substrate of the silicon wafer create the parasitic pnp transistors of the SCR. The shared ndd area together with the n+ sources of the NMOS transistors creates the SCR's two parasitic npn transistors.

Abstract: A genetic algorithm (GA) based approach to optimize integrated circuit designs for power dissipation. The genetic algorithm optimization process efficiently generates tight lower bounds of the peak power dissipation for a given integrated circuit design. In this approach, the power within a given integrated circuit design circuit is viewed as a function in terms of a set of stimuli to primary inputs of the integrated circuit design. Maximization of the function, and hence, the power dissipation is guided by the genetic algorithm. By repeatedly stimulating the integrated circuit design and measuring the corresponding response, the genetic algorithm process efficiently explores the solution space to obtain a maximization of the function. The genetic algorithm process is implemented within a computer-based EDA (electronic design automation) synthesis system.

Abstract: A device layout is disclosed for an ESD device for protecting NMOS high voltage transistors where the SCR protection device and the two NMOS transistors are integrated. The two NMOS transistors share an n-type doped drain (ndd) area which has implanted two n+ drains, one for each of the two transistors and a p+ diffusion separates the two n+ drains. Furthermore, the ndd area has implanted an n-well which extends from halfway under the first n+ drain to halfway under the second n+ drain. In addition, the depth of the n-well exceeds the depth of the ndd area. The added p+ diffusion together with the ndd area and the p-substrate of the silicon wafer create the parasitic pnp transistors of the SCR. The shared ndd area together with the n+ sources of the NMOS transistors creates the SCR's two parasitic npn transistors.

Abstract: A new design for a high voltage bipolar transistor is disclosed. Instead of a buried subcollector (which would be N+ in an NPN device), a buried P+ layer is used. The presence of this P+ layer results in pinch-off between itself and the bipolar base. This allows much higher breakdown voltages to be achieved. In particular, the device will not break down at the bottom of the base-collector junction which is the weak spot for conventional devices. A process for manufacturing this device is described. A particular feature of this new process is that the N type epitaxial layer that is grown over the P+ layer is only about half the thickness of its counterpart in the conventional device. The process is fully compatible with conventional BiCMOS processes and has lower cost.

Abstract: A device layout is disclosed for an ESD device for protecting NMOS high voltage transistors where the SCR protection device and the two NMOS transistors are integrated. The two NMOS transistors share an n-type doped drain (ndd) area which has implanted two n+ drains, one for each of the two transistors and a p+ diffusion separates the two n+ drains. Furthermore, the ndd area has implanted an n-well which extends from halfway under the first n+ drain to halfway under the second n+ drain. In addition, the depth of the n-well exceeds the depth of the ndd area. The added p+diffusion together with the ndd area and the p-substrate of the silicon wafer create the parasitic pnp transistors of the SCR. The shared ndd area together with the n+ sources of the NMOS transistors creates the SCR's two parasitic npn transistors.

Abstract: A new design for a high voltage bipolar transistor is disclosed. Instead of a buried subcollector (which would be N+ in an NPN device)d a buried P+ layer is used. The presence of this P+ layer results in pinch-off between itself and the bipolar base. This allows much higher breakdown voltages to be achieved. In particular, the device will not break down at the bottom of the base-collector junction which is the weak spot for conventional devices. A process for manufacturing this device is described. A particular feature of this new process is that the N type epitaxial layer that is grown over the P+ layer is only about half the thickness of its counterpart in the conventional device. The process is fully compatible with conventional BiCMOS processes and has lower cost.

Abstract: This invention discloses a computer translation method and system for resoving word ambiguity. During translating a text in a first language, checking whether or not the word to be translated or the sentence containing the word has additional related text that is associated by a linkage. When the meaning of the word can not be uniquely determined in a second language by analyzing the context than the related text is obtained according to the linkage and the word is translated using both the immediate text and the related text. The linkage mechanism is described as a hyperlink in a HTML document.

Abstract: The device includes a N+ buried layer in a substrate. A P-well is formed in an epitaxial layer on the buried layer. N-wells surround the P-well are also formed in the epitaxial layer. One of the N-well regions acts as a drain in the structure. A plurality of field oxide regions is formed on the N-well or P-well to define the active area of the device. A gate oxide is formed on the surface of the P-well and the N-well served as the drain. A gate is formed on the gate oxide. Drain contact is formed in the N-well for drain. The source region of the device is formed in the P-well adjacent to the drain. An isolation layer is deposited on the gate. The method includes forming a N+ buried layer in a P substrate. A P epitaxial layer is then formed on the surface of the P substrate. The N-well and P-well are respectively formed in the epitaxial layer by ion implantation and thermally diffusion. A plurality of field oxide (FOX) regions are created to define the active area.

Abstract: An intracavity resonant Fabry-Perot saturable absorber (R-FPSA) induces modelocking in a laser such as a fiber laser. An optical limiter such as a two photon absorber (TPA) can be used in conjunction with the R-FPSA, so that Q-switching is inhibited, resulting in laser output that is cw modelocked. By using both an R-FPSA and a TPA, the Q-switched modelocked behavior of a fiber laser is observed to evolve into cw modelocking.

Abstract: A method for fabricating a buried layer pinched collector bipolar, (BPCB), device, sharing several process steps with simultaneously formed CMOS devices, has been developed. The BPCB device fabrication sequence features the use of polysilicon field plates,. placed on field oxide regions, in an area of an N well region in which the field oxide regions are located between subsequent P type, base and N type, collector regions. The use of the polysilicon field plates results in an increase in collector—emitter breakdown voltage, as a result of a reduction in the electric field at the surface underlying the polysilicon field plates.

Abstract: An intracavity resonant Fabry-Perot saturable absorber (R-FPSA) induces modelocking in a laser such as a fiber laser. An optical limiter such as a two photon absorber (TPA) can be used in conjunction with the R-FPSA, so that Q-switching is inhibited, resulting in laser output that is cw modelocked. By using both an R-FPSA and a TPA, the Q-switched modelocked behavior of a fiber laser is observed to evolve into cw modelocking.