Abstract: A multilayer electronic component includes a body including dielectric layers and internal electrodes alternately disposed with the dielectric layers and external electrodes disposed on the body and connected to the internal electrodes. The one of the internal electrodes includes Ni, Ba, Ti, O, and Tb, and a content of Tb relative to a sum of contents of Ni, Ba, Ti, O, and Tb is 0.45 to 3.0 wt %.

Abstract: A multilayer electric component includes a body including a dielectric layer and internal electrodes alternately stacked with the dielectric layer interposed therebetween and external electrodes disposed on the body and connected to the internal electrodes, wherein the internal electrodes include Cu and Ni and a coefficient of variation (CV) value of Cu/Ni (percent by weight) in a region thereof, 5 nm deep from an interface with the dielectric layer is 25.0% or less.

Abstract: A multilayer capacitor includes a body including a stack structure in which a plurality of dielectric layers are stacked and a plurality of internal electrodes stacked with respective dielectric layers interposed therebetween, external electrodes disposed on external surfaces of the body and connected to the internal electrodes, and an insulating layer covering a surface of the body. One of the external electrodes includes a metal layer connected to the insulating layer, and the insulating layer includes an oxide of a metal component of the metal layer.

Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode alternately disposed with the dielectric layer interposed therebetween in a first direction; and an external electrode disposed on the body and connected to the internal electrode, wherein 0.46 to 1.08 at % is a range of an indium (In) content compared to nickel (Ni) and indium (In) contents in a surface layer portion of the internal electrode.

Abstract: Disclosed are a method for designing a cache memory structure of an artificial intelligence accelerator and an apparatus therefor. A method for designing a structure of a cache memory of an accelerator in a cache memory structure designing apparatus is a cache memory structure designing method including a memory access information extracting step of extracting a memory address of a cache memory accessed by a processing element array (PE array) at every time stamp for an application input to the accelerator, a memory access pattern determining step of determining a memory access pattern for the application based on the memory addresses of the cache memory accessed over time, and a cache structure design step of deriving a cache memory structure using a cache structure design model trained in advance based on a memory access pattern and generating cache structure design information for the cache memory structure.

Abstract: A multilayer capacitor includes a body including a stack structure in which a plurality of dielectric layers are stacked and a plurality of internal electrodes stacked with respective dielectric layers interposed therebetween, external electrodes disposed on external surfaces of the body and connected to the internal electrodes, and an insulating layer covering a surface of the body. One of the external electrodes includes a metal layer connected to the insulating layer, and the insulating layer includes an oxide of a metal component of the metal layer.

Abstract: A multilayer electronic component includes a body including a dielectric layer and internal electrodes alternately stacked with the dielectric layer interposed therebetween; and an external electrode disposed on the body and connected to the internal electrodes. One of the internal electrodes includes Ni, and a lattice constant of Ni included in the one of the internal electrodes satisfies a range of 3.53 ? to 3.72 ?.

Abstract: A multilayer electronic component includes a body including dielectric layers and internal electrodes alternately disposed with the dielectric layers and external electrodes disposed on the body and connected to the internal electrodes. The one of the internal electrodes includes Ni, Ba, Ti, O, and Tb, and a content of Tb relative to a sum of contents of Ni, Ba, Ti, O, and Tb is 0.45 to 3.0 wt %.

Abstract: A multilayer capacitor includes a body including a stack structure in which a plurality of dielectric layers are stacked and a plurality of internal electrodes stacked with respective dielectric layers interposed therebetween, external electrodes disposed on external surfaces of the body and connected to the internal electrodes, and an insulating layer covering a surface of the body. One of the external electrodes includes a metal layer connected to the insulating layer, and the insulating layer includes an oxide of a metal component of the metal layer.

Abstract: A multilayer electric component includes a body including a dielectric layer and internal electrodes alternately stacked with the dielectric layer interposed therebetween and external electrodes disposed on the body and connected to the internal electrodes, wherein the internal electrodes include Cu and Ni and a coefficient of variation (CV) value of Cu/Ni (percent by weight) in a region thereof, 5 nm deep from an interface with the dielectric layer is 25.0% or less.

Abstract: A multilayer electronic component includes a body including dielectric layers and internal electrodes alternately disposed with the dielectric layers and external electrodes disposed on the body and connected to the internal electrodes. The one of the internal electrodes includes Ni, Ba, Ti, O, and Tb, and a content of Tb relative to a sum of contents of Ni, Ba, Ti, O, and Tb is 0.45 to 3.0 wt %.

Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode alternately stacked therein in a stacking direction; and an external electrode disposed on the body and connected to the internal electrode. The internal electrode includes 94.0 to 99.6 wt % of Ni and 0.4 to 6.0 wt % of Cu.

Abstract: A multilayer capacitor includes a body including a stack structure in which a plurality of dielectric layers are stacked and a plurality of internal electrodes stacked with respective dielectric layers interposed therebetween, external electrodes disposed on external surfaces of the body and connected to the internal electrodes, and an insulating layer covering a surface of the body. One of the external electrodes includes a metal layer connected to the insulating layer, and the insulating layer includes an oxide of a metal component of the metal layer.

Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode alternately disposed with the dielectric layer interposed therebetween in a first direction; and an external electrode disposed on the body and connected to the internal electrode, wherein 0.46 to 1.08 at% is a range of an indium (In) content compared to nickel (Ni) and indium (In) contents in a surface layer portion of the internal electrode.

Abstract: A multilayer electric component includes a body including a dielectric layer and internal electrodes alternately stacked with the dielectric layer interposed therebetween and external electrodes disposed on the body and connected to the internal electrodes, wherein the internal electrodes include Cu and Ni and a coefficient of variation (CV) value of Cu/Ni (percent by weight) in a region thereof, 5 nm deep from an interface with the dielectric layer is 25.0% or less.

Abstract: A multilayer electronic component includes a body including a dielectric layer and internal electrodes alternately stacked with the dielectric layer interposed therebetween; and an external electrode disposed on the body and connected to the internal electrodes. One of the internal electrodes includes Ni, and a lattice constant of Ni included in the one of the internal electrodes satisfies a range of 3.53 ? to 3.72 ?.

Abstract: A multilayer electronic component includes a body including dielectric layers and internal electrodes alternately disposed with the dielectric layers and external electrodes disposed on the body and connected to the internal electrodes. The one of the internal electrodes includes Ni, Ba, Ti, O, and Tb, and a content of Tb relative to a sum of contents of Ni, Ba, Ti, O, and Tb is 0.45 to 3.0 wt %.

Abstract: A multilayer electric component includes a body including a dielectric layer and internal electrodes alternately stacked with the dielectric layer interposed therebetween and external electrodes disposed on the body and connected to the internal electrodes, wherein the internal electrodes include Cu and Ni and a coefficient of variation (CV) value of Cu/Ni (percent by weight) in a region thereof, 5 nm deep from an interface with the dielectric layer is 25.0% or less.

Abstract: A multilayer capacitor includes a body including a stack structure in which a plurality of dielectric layers are stacked and a plurality of internal electrodes stacked with respective dielectric layers interposed therebetween, external electrodes disposed on external surfaces of the body and connected to the internal electrodes, and an insulating layer covering a surface of the body. One of the external electrodes includes a metal layer connected to the insulating layer, and the insulating layer includes an oxide of a metal component of the metal layer.

Abstract: A multilayer electronic component includes a body including a dielectric layer and internal electrodes alternately stacked with the dielectric layer interposed therebetween, and an external electrode disposed on the body and connected to the internal electrodes . An end portion of at least one of the internal electrodes in a longitudinal direction of the body is thicker than a central portion of the internal electrode, and a ratio t2/t1 of a thickness t2 of the end portion to a thickness t1 of the central portion satisfies 1.1?t2/t1?1.5.