Abstract: A touch control system for a vehicle may include a detector portion disposed on a head lining of a vehicle, and a communication module configured to receive a signal from the detector portion and transmit the signal to a device to be controlled by the signal.

Abstract: Disclosed are a blankmask and a photomask, in which compositions of metal and light elements of a light-shielding film are controlled so that the light-shielding film can guarantee a light-shielding efficiency, increase an etching speed, become thinner, and have a minimum sheet-resistance. To this end, the blankmask according to the present invention includes at least a light-shielding film on a transparent substrate, and the light-shielding film includes a first light-shielding layer adjacent to the transparent substrate and a second light-shielding layer formed on the first light-shielding layer, in which the first and the second light-shielding film contains chrome (Cr) and molybdenum (Mo).

Abstract: Disclosed is a phase-shift blankmask for manufacturing a photomask, which can achieve a fine pattern of not greater than 32 nm, preferably not greater than 14 nm, and more preferably not greater than 10 nm. To this end, a phase-shift film, a light-shielding film, an etch-stopping film and a hard film are provided on a transparent substrate, in which the light-shielding film has a multi-layered structure of two or more layers different in composition, one of which essentially contains oxygen (O), a light-shielding layer essentially having oxygen (O) occupies 50%˜100% of the whole thickness of the light-shielding film, and the phase-shift film has a transmissivity of 10%˜50%.

Abstract: Disclosed is a phase-shift blankmask, in which a light-shielding film includes a metal compound and having a structure of a multi-layer film or a continuous film, which includes a first light-shielding layer and a second light-shielding layer. The second light-shielding layer has higher optical density at an exposure wavelength per unit thickness (?) than the first light-shielding layer. The first light-shielding layer occupies 70% to 90% of the whole thickness of the light-shielding film. With this, the blankmask secures a light-shielding effect, has an improved etching speed, and makes a resist film thinner, thereby achieving a fine pattern.

Abstract: A continuous electric/electronic device and a method of manufacturing the same are disclosed. The method of manufacturing a continuous electric/electronic device having a serial connection structure comprises (a) disposing a first electrode current collection unit, (b) disposing first organic•inorganic material in regard to the first electrode current collection unit, (c) laminating a first area of a second electrode current collection unit on the disposed first organic•inorganic material, (d) disposing second organic•inorganic material in regard to a second area of the second electrode current collection unit and (e) laminating a third electrode current collection unit on the disposed second organic•inorganic material. Here, the first area and the second area of the second electrode current collection unit operate as current collection units having different polarity in regard to adjoining first organic•inorganic material and second organic•inorganic material.

Abstract: Disclosed are a blankmask and a photomask, in which compositions of metal and light elements of a light-shielding film are controlled so that the light-shielding film can guarantee a light-shielding efficiency, increase an etching speed, become thinner, and have a minimum sheet-resistance. To this end, the blankmask according to the present invention includes at least a light-shielding film on a transparent substrate, and the light-shielding film includes a first light-shielding layer adjacent to the transparent substrate and a second light-shielding layer formed on the first light-shielding layer, in which the first and the second light-shielding film contains chrome (Cr) and molybdenum (Mo).

Abstract: A blankmask and a photomask using the same are provided. The blankmask can be useful in preventing the loss in thickness of lateral, top and bottom surfaces of a pattern of a light shielding film or a phase shifting film after the manufacture of the photomask by forming protective film, which has an etch selectivity with respect to a pattern of a hard film or the light shielding film, on the light shielding film or the phase shifting film so that the loss of the phase shifting film formed under the light shielding film or the phase shifting film can be prevented when a process of removing the light shielding film disposed under the hard film or a pattern of the light shielding film is performed during a washing process and a process of removing a pattern of the hard film in a method of manufacturing a photomask, thereby securing uniformity in thickness.

Abstract: Disclosed is a phase-shift blankmask for manufacturing a photomask, which can achieve a fine pattern of not greater than 32 nm, preferably not greater than 14 nm, and more preferably not greater than 10 nm. To this end, a phase-shift film, a light-shielding film, an etch-stopping film and a hard film are provided on a transparent substrate, in which the light-shielding film has a multi-layered structure of two or more layers different in composition, one of which essentially contains oxygen (O), a light-shielding layer essentially having oxygen (O) occupies 50%˜100% of the whole thickness of the light-shielding film, and the phase-shift film has a transmissivity of 10%˜50%.

Abstract: Disclosed is a phase-shift blankmask, in which a light-shielding film includes a metal compound and having a structure of a multi-layer film or a continuous film, which includes a first light-shielding layer and a second light-shielding layer. The second light-shielding layer has higher optical density at an exposure wavelength per unit thickness (?) than the first light-shielding layer. The first light-shielding layer occupies 70% to 90% of the whole thickness of the light-shielding film. With this, the blankmask secures a light-shielding effect, has an improved etching speed, and makes a resist film thinner, thereby achieving a fine pattern.

Abstract: Provided is a phase-shift blankmask in which a phase-shift layer is formed in at least two continuous layers or a multi-layer film and an uppermost phase-shift layer included in the phase-shift layer is thinly formed to contain a small amount of oxygen (O) so as to enhance chemical resistance and durability thereof. Accordingly, a phase-shift blankmask including the phase-shift layer having enhanced chemical resistance and durability with respect to a cleaning solution containing acid and basic materials, hot deionized water, or ozone water, which is used in a cleaning process that is repeatedly performed during manufacture of a photomask, may be provided using the uppermost phase-shift layer having the enhanced chemical resistance and durability.

Abstract: A blankmask and a photomask using the same are provided. The blankmask can be useful in preventing the loss in thickness of lateral, top and bottom surfaces of a pattern of a light shielding film or a phase shifting film after the manufacture of the photomask by forming protective film, which has an etch selectivity with respect to a pattern of a hard film or the light shielding film, on the light shielding film or the phase shifting film so that the loss of the phase shifting film formed under the light shielding film or the phase shifting film can be prevented when a process of removing the light shielding film disposed under the hard film or a pattern of the light shielding film is performed during a washing process and a process of removing a pattern of the hard film in a method of manufacturing a photomask, thereby securing uniformity in thickness.

Abstract: A system reset circuit and a method for resetting a system automatically according to an operation state of the system are provided. The system reset circuit includes a system, which is triggered by a first logic state during an operation of a program and a second logic state at termination of the program, for generating a trigger signal for maintaining the first logic state in a lockup state and a counter for receiving the trigger signal as an enable signal, for counting a period of the first logic state of the trigger signal, and for clearing the counting for a period of the second logic state, and of which an output node is connected to a reset node of the system, wherein, when the first logic state period of the trigger signal is maintained before the counter expires, the system generates a reset signal automatically.

Abstract: A method of manufacturing nano-fiber non-woven fabrics is provided. The method comprises preparing a polyurethane solution by dissolving polyurethane in an organic solvent, producing an electrospinning solution by adding far infrared ray emitting particles, antibacterial inorganic particles, and deodorization inorganic particles to the polyurethane solution, and electrospinning the electrospinning solution to form the nano-fiber non-woven fabric. The far infrared ray emitting particles may be obtained by adding a metal oxide to ceramics and sintering the metal oxide-added ceramics. The antibacterial inorganic particles may be obtained by impregnating a zirconium-based carrier with silver ions. The deodorization inorganic particles may be obtained by impregnating a zirconium-based or a silica oxide-based carrier with an amine-based compound.

Abstract: Provided is a phase-shift blankmask in which a phase-shift layer is formed in at least two continuous layers or a multi-layer film and an uppermost phase-shift layer included in the phase-shift layer is thinly formed to contain a small amount of oxygen (O) so as to enhance chemical resistance and durability thereof. Accordingly, a phase-shift blankmask including the phase-shift layer having enhanced chemical resistance and durability with respect to a cleaning solution containing acid and basic materials, hot deionized water, or ozone water, which is used in a cleaning process that is repeatedly performed during manufacture of a photomask, may be provided using the uppermost phase-shift layer having the enhanced chemical resistance and durability.

Abstract: A method of manufacturing nano-fiber non-woven fabrics is provided. The method comprises preparing a polyurethane solution by dissolving polyurethane in an organic solvent, producing an electrospinning solution by adding far infrared ray emitting particles, antibacterial inorganic particles, and deodorization inorganic particles to the polyurethane solution, and electrospinning the electrospinning solution to form the nano-fiber non-woven fabric. The far infrared ray emitting particles may be obtained by adding a metal oxide to ceramics and sintering the metal oxide-added ceramics. The antibacterial inorganic particles may be obtained by impregnating a zirconium-based carrier with silver ions.

Abstract: A system reset circuit and a method for resetting a system automatically according to an operation state of the system are provided. The system reset circuit includes a system, which is triggered by a first logic state during an operation of a program and a second logic state at termination of the program, for generating a trigger signal for maintaining the first logic state in a lockup state and a counter for receiving the trigger signal as an enable signal, for counting a period of the first logic state of the trigger signal, and for clearing the counting for a period of the second logic state, and of which an output node is connected to a reset node of the system, wherein, when the first logic state period of the trigger signal is maintained before the counter expires, the system generates a reset signal automatically.